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(2009) physica status solidi (c) Vol. 6. Wiley

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Reference TypeJournal (volume)
Journalphysica status solidi (c)
Year2009Volume<   6   >
PublisherWiley
Mindat Ref. ID5117026Long-form Identifiermindat:1:5:5117026:2
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Full Reference(2009) physica status solidi (c) Vol. 6. Wiley
Plain Text(2009) physica status solidi (c) Vol. 6. Wiley
InWiley (2004 - ) Physica status solidi (c)

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Meng, Xiangeng, Fujita, Koji, Murai, Shunsuke, Zong, Yanhua, Akasaka, Satoshi, Hasegawa, Hirokazu, Tanaka, Katsuhisa (2009) Coherent random lasers from weakly scattering polymer films embedded with superfine silver nanoparticles. physica status solidi (c), 6. doi:10.1002/pssc.200881292
Gagné, Mathieu, Bojor, Lucian, Maciejko, Romain, Kashyap, Raman (2009) Novel long fiber Bragg grating fabrication technique based on push-pull phase-shifting interferometry. physica status solidi (c), 6. doi:10.1002/pssc.200881293
Hari, Parameswar, Spencer, Daryl (2009) Surface morphology of zinc oxide nanorods grown by hydrothermal deposition technique. physica status solidi (c), 6. doi:10.1002/pssc.200881295
Fujiwara, Masazumi, Yamauchi, Kensei, Sugisaki, Mitsuru, Yanagi, Kazuhiro, Gall, Andrew, Robert, Bruno, Cogdell, Richard J., Hashimoto, Hideki (2009) Third-order optical nonlinearity of β-carotene homologues. physica status solidi (c), 6. doi:10.1002/pssc.200881296
Homampour, Shabnam, Bulk, Michael P., Jessop, Paul E., Knights, Andrew P. (2009) Thermal tuning of planar Bragg gratings in silicon-on-insulator rib waveguides. physica status solidi (c), 6. doi:10.1002/pssc.200881298
Imai, Takahiko, Maeda, Kouji, Fujita, Masahiro, Saito, Nobuo (2009) Photoluminescence properties of erbium-doped amorphous gallium-germanium-selenium films fabricated by RF sputtering. physica status solidi (c), 6. doi:10.1002/pssc.200881300
Itoh, T., Matsuyama, K., Shimakawa, K., Orava, J., Wagner, T., Frumar, M. (2009) Optical properties of conductive ZnO films near infrared frequency. physica status solidi (c), 6. doi:10.1002/pssc.200881301
Adati, Renata Danielle, Davolos, Marian Rosaly, Jafelicci, Miguel, Lima, Sergio Antonio Marques, Viegas, Cláudio (2009) New phosphinate ligand synthesis and its effect on optical properties of the europium β-diketonate complex. physica status solidi (c), 6. doi:10.1002/pssc.200881302
Kanemoto, Katsuichi, Sugisaki, Mitsuru, Fujiwara, Masazumi, Karasawa, Tsutomu, Hashimoto, Hideki (2009) Ultrafast coherent vibronic oscillations in regioregular poly(3-alkylthiophene). physica status solidi (c), 6. doi:10.1002/pssc.200881304
Lee, S. C., Ku, Z., Jang, W.-Y., Kim, J. H., Hains, C., Krishna, S., Brueck, S. R. J. (2009) Mid-infrared transmission through a subwavelength circular aperture coupled to a surrounding concentric metal grating by surface plasmon excitation. physica status solidi (c), 6. doi:10.1002/pssc.200881308
Lucas, F. Olabanji, McNally, P. J., Cowley, A., Daniels, S., Bradley, L., Danieluk, D., Taylor, D. M. (2009) Structural, optical and electrical properties of Co-evaporated CuCl/KCl films. physica status solidi (c), 6. doi:10.1002/pssc.200881310
Lucovsky, G., Baker, D. A., Washington, J. P., Paesler, M. A. (2009) Microscopic local bonding and optically-induced switching for Ge2Sb2Te5 alloys: A tale of four pseudo-binary and three binary tie-lines in Ge-Sb-Te phase field. physica status solidi (c), 6. doi:10.1002/pssc.200881313
Maeda, Kouji, Tsuruda, Kazuisao, Imai, Takahiko, Ikari, Tetsuo (2009) Effect of alkali halides on the emission properties in Tm-doped chalcogenide glasses. physica status solidi (c), 6. doi:10.1002/pssc.200881314
Malyk, Orest (2009) The local electron interaction with crystal lattice defects in CdHgSe solid solution. physica status solidi (c), 6. doi:10.1002/pssc.200881315
Mamizuka, Masataka, Kojima, Osamu, Inoue, Tomoya, Kita, Takashi, Wada, Osamu (2009) Exciton response controlled by introducing a spacer layer in nitrided InAs quantum dots. physica status solidi (c), 6. doi:10.1002/pssc.200881316
Martinez, Omar S., Palomera, Roger C., Cruz, Jose S., Mathew, Xavier (2009) Co-evaporated Cd1-xMgxTe thin films for applications in tandem solar cells. physica status solidi (c), 6. doi:10.1002/pssc.200881318
Mathews, N. R., Jacome, M. A. Corte, Morales, Erik R., Antonio, J. A. Toledo (2009) Structural and spectroscopic study of the Fe doped TiO2 thin films for applications in photocatalysis. physica status solidi (c), 6. doi:10.1002/pssc.200881319
Miao, L., Tanemura, S., Yang, H. Y., Lau, S. P., Xu, G. (2009) Random laser action in 3-D ZnO nanostructures. physica status solidi (c), 6. doi:10.1002/pssc.200881322
Mogilevsky, Radion, Nedilko, Sergii, Sharafutdinova, Liudmila, Burlay, Sergii, Sherbatskii, Vasyl, Boyko, Volodymyr, Mittl, Scott (2009) Luminescence study of grown sapphire: from starting material to single crystal. physica status solidi (c), 6. doi:10.1002/pssc.200881323
Nakagawa, A., Abe, T., Chiba, S., Endo, H., Meguro, K., Kashiwaba, Y., Ojima, T., Aota, K., Niikura, I., Kashiwaba, Y., Fujiwara, T. (2009) Characteristics of high-quality homoepitaxial ZnO (0001) films grown by the plasma-assisted reactive evaporation method. physica status solidi (c), 6. doi:10.1002/pssc.200881325
Nemova, Galina, Kashyap, Raman (2009) LPG assisted high-power fiber amplifier with Er3+ doped cladding. physica status solidi (c), 6. doi:10.1002/pssc.200881327
Nemova, Galina, Kashyap, Raman (2009) High efficiency solid state laser cooling in Yb3+:ZBLANP fiber with tilted fiber Bragg grating structures. physica status solidi (c), 6. doi:10.1002/pssc.200881328
Ogihara, C., Morigaki, K. (2009) Temperature variation of radiative recombination rate of electron-hole pairs responsible for defect photoluminescence in a-Si:H. physica status solidi (c), 6. doi:10.1002/pssc.200881329
Ohkawa, Yuji, Miyakawa, Kazunori, Matsubara, Tomoki, Kikuchi, Kenji, Suzuki, Shirou, Kubota, Misao, Egami, Norifumi, Kobayashi, Akira (2009) Temperature dependence of carrier traps in high sensitivity HARP photoconductive film. physica status solidi (c), 6. doi:10.1002/pssc.200881330
Rodríguez-Mijangos, R., Perez-Salas, R. (2009) Mixture effects on the glow peak temperature of europium doped binary crystals. physica status solidi (c), 6. doi:10.1002/pssc.200881332
Bommareddi, Swaroop, Dokhanian, Mostafa, Reddy, B. Rami (2009) Energy upconversion in erbium doped sodium lead germano tellurite glass. physica status solidi (c), 6. doi:10.1002/pssc.200881333
Kamma, Indumathi, Kommidi, Praveena, Reddy, B. Rami (2009) High temperature measurement using luminescence of Pr3+ doped YAG and Ho3+ doped CaF2. physica status solidi (c), 6. doi:10.1002/pssc.200881334
Dragonetti, Claudia, Righetto, Stefania, Roberto, Dominique, Valore, Adriana (2009) The role of the cyclometallated moiety on the second order nonlinear optical properties of cationic Ir(III) organometallic NLO-phores. physica status solidi (c), 6. doi:10.1002/pssc.200881336
Safavian, N., Izadi, M. H., Sultana, A., Wu, D., Karim, K. S., Nathan, A., Rowlands, J. A. (2009) Noise analysis of a novel hybrid active-passive pixel sensor for medical X-ray imaging. physica status solidi (c), 6. doi:10.1002/pssc.200881337
Sakano, A., Mizutani, R., Fuchi, S., Takeda, Y. (2009) Fabrication of Bi2O3-GeO2 glass phosphor co-doped with Yb3+, Nd3+ for optical coherence tomography light source. physica status solidi (c), 6. doi:10.1002/pssc.200881338
Sandoval-Romero, G. E., Argueta-Díaz, V., Pottiez, O. (2009) Theoretical results of the analytical and numerical solutions of superluminescent fiber sources. physica status solidi (c), 6. doi:10.1002/pssc.200881339
Singh, Mahi R., Hatef, Ali (2009) Time evolution of absorption process in nonlinear metallic photonic crystals. physica status solidi (c), 6. doi:10.1002/pssc.200881340
Sugisaki, Mitsuru, Fujiwara, Masazumi, Nair, Selvakumar V., Ruda, Harry E., Cogdell, Richard J., Hashimoto, Hideki (2009) Spectrally-resolved transient grating signals from β-carotene in benzene solution. physica status solidi (c), 6. doi:10.1002/pssc.200881344
Sukhorukov, Oleksandr, Bakule, Pavel, Matsuda, Yasuyuki, Kamal, Saeid, Momose, Takamasa, Fleming, Donald (2009) Application of stimulated Raman pumping toward the first study of chemical reaction dynamics of the muonium atom with H2*. physica status solidi (c), 6. doi:10.1002/pssc.200881345
Sultana, Afrin, Karim, K. S., Rowlands, J. A. (2009) The effect of K- fluorescence reabsorption of selenium on the performance of an imaging detector for protein crystallography. physica status solidi (c), 6. doi:10.1002/pssc.200881346
Takats, Viktor, Miller, Floyd, Jain, Himanshu, Cserhati, Csaba, Kokenyesi, Sandor (2009) Direct surface patterning of homogeneous and nanostructured chalcogenide layers. physica status solidi (c), 6. doi:10.1002/pssc.200881347
Talwar, Devki N., Wood, Joshua, Zhou, Feng (2009) Studying the microscopic clusters involving N in dilute GaIn(Al)NAs alloys via local mode spectroscopy and computer simulation. physica status solidi (c), 6. doi:10.1002/pssc.200881348
Miao, L., Tanemura, S., Cao, Y.G., Xu, G. (2009) Optical properties of In2O3 thin films prepared by rf helicon magnetron sputtering. physica status solidi (c), 6. doi:10.1002/pssc.200881350
Taschuk, M. T., Chai, J., Buriak, J. M., Brett, M. J. (2009) Optical characterization of pseudo-ordered nanostructured thin films. physica status solidi (c), 6. doi:10.1002/pssc.200881351
Taschuk, M. T., LaForge, J. M., Nguyen, H., Sun, Y. W., Kursa, P., DeCorby, R. G., Brett, M. J., Tsui, Y. Y. (2009) Absolute characterization of photoluminesence from pulsed-laser deposited, sol-gel, sputtered and evaporated ZnO thin films. physica status solidi (c), 6. doi:10.1002/pssc.200881352
Terakado, Nobuaki, Tanaka, Keiji (2009) Ag-photodoping in nano-structured GeO2-GeS2 glasses. physica status solidi (c), 6. doi:10.1002/pssc.200881353
Tomioka, Akihiro, Kamiyama, Yasushi, Fujimoto, Atsushi, Kawakami, Shin'ya (2009) Selective formation of dequenched aggregates of rhodamines: comparison with J- and H-aggregates. physica status solidi (c), 6. doi:10.1002/pssc.200881354
Tomioka, Akihiro, Kamiyama, Yasushi, Ohno, Yoshiyuki, Kosuge, Yuki, Otani, Kota (2009) Amplified spontaneous emissions from π-conjugate conductive polymer film: evanescent-field modulation by a 1-D photonic crystal substrate. physica status solidi (c), 6. doi:10.1002/pssc.200881355
Kamiyama, Yasushi, Tomioka, Akihiro, Anzai, Takahiro, Iwamoto, Kazuhisa, Susaki, Wataru (2009) Near-field modulation of AlGaInP laser diode emissions by an aperture probe of near-field optical microscope. physica status solidi (c), 6. doi:10.1002/pssc.200881356
Mustafa, Falah I., Gupta, Shikha, Goyal, N., Tripathi, S. K. (2009) Temperature dependence of the energy gap, refractive index and optical-oscillator parameters of amorphous GaxSe1-x (x = 0.4, 0.5, 0.6) thin films. physica status solidi (c), 6. doi:10.1002/pssc.200881357
Kyiko, V. V., Pushkar, A. A., Uvarova, T. V., Egorov, A. (2009) Investigation of absorption of Ce3+, Pr3+ and Yb3+ in single crystals of BaR2F8. physica status solidi (c), 6. doi:10.1002/pssc.200881358
Watanabe, Shingo, Kojima, Osamu, Kita, Takashi, Wada, Osamu, Isu, Toshiro (2009) Transient reflectivity response with negative time delay caused by femtosecond pulse propagation in GaAs thin films. physica status solidi (c), 6. doi:10.1002/pssc.200881359
Aiboushev, A. V., Astafiev, A. A., Lozovik, Yu E., Merkulova, S. P., Nadtochenko, V. A., Sarkisov, O. M., Willander, M. (2009) Enhanced luminescence and two-photon absorption of silver nano-clusters. physica status solidi (c), 6. doi:10.1002/pssc.200881361
Williams, G. V. M., Dotzler, C., Robinson, J. (2009) Radiation-induced optically stimulated luminescence in Mn2+ and Eu2+ doped RbMgF3. physica status solidi (c), 6. doi:10.1002/pssc.200881363
Li, M. M., Zhang, J., Li, F. J., Zhu, F. X., Zhang, M., Zhao, X. F. (2009) First-principle study of electronic structures of multi-layer graphenes. physica status solidi (c), 6. doi:10.1002/pssc.200881365
(2009) Contents: Phys. Status Solidi C 6/S1. physica status solidi (c), 6. doi:10.1002/pssc.200960056
Kasap, Safa, DeCorby, Ray, Ruda, Harry, Hegmann, Frank, Kashyap, Raman, Guest Editors, (2009) Preface: Phys. Status Solidi C 6/S1. physica status solidi (c), 6. doi:10.1002/pssc.200960057
(2009) Cover Picture: Phys. Status Solidi C 6/S1. physica status solidi (c), 6. doi:10.1002/pssc.200990006
(2009) physica status solidi (c), 6. Wiley. doi:10.1002/pssc.v6.5s
Abe, Takami, Nakagawa, A., Chiba, S., Kashiwaba, Y., Endo, H., Meguro, K., Ojima, T., Aota, K., Daibo, M., Osada, H., Niikura, I., Kashiwaba, Y., Fujiwara, T. (2009) Structure and optical properties of non-doped and N-doped ZnO films with non-polar surfaces grown homoepitaxially on single crystal ZnO (11$ \bar 2 $0) substrates. physica status solidi (c), 6. doi:10.1002/pssc.200881271
Aoki, Takeshi, Koughia, Kirill, Fujimoto, K., Fujihashi, C., DeCorby, R., Haugen, C., Hewak, D. W., Tonchev, D., Kasap, Safa (2009) Observation of 4F3/2→4I15/2 radiative transition in Nd3+ ions in GaLaS glass using frequency-resolved PL spectroscopy. physica status solidi (c), 6. doi:10.1002/pssc.200881272
Baribeau, J.-M., Wu, X. (2009) Advances in self-assembled SiGe islands and nanostructures. physica status solidi (c), 6. doi:10.1002/pssc.200881273
Bradley, Michael P., Desautels, Phillip R., Hunter, Darren, Risch, Marcel (2009) Silicon electroluminescent device production via plasma ion implantation. physica status solidi (c), 6. doi:10.1002/pssc.200881278
Risch, Marcel, Bradley, Michael P. (2009) Prospects for band gap engineering by plasma ion implantation. physica status solidi (c), 6. doi:10.1002/pssc.200881279
Chen, Jun, Ban, Dayan, Feng, Xiaodong, Lu, Zhenghong, Fathololoumi, Saeed, Thorpe, Anthony J. Spring, Liu, H. C. (2009) Near-infrared inorganic/organic hybrid optical upconverter with an embedded mirror. physica status solidi (c), 6. doi:10.1002/pssc.200881280
Dash, Isha, Tonchev, Dan, Belev, George, Mani, Habib, Kasap, Safa (2009) Electronic and thermal properties of magnesium-doped a-Se films. physica status solidi (c), 6. doi:10.1002/pssc.200881283
Cebim, Marco Aurélio, Silva, Alison Abreu Da, Davolos, Marian Rosaly (2009) Spectroscopy properties and energy level location of Gd2O2S:Pr3+,Ce3+. physica status solidi (c), 6. doi:10.1002/pssc.200881284
Torchynska, T. V., Douda, J., Sierra, R. Peña (2009) Photoluminescence of core-shell CdSe/ZnS quantum dots of different sizes. physica status solidi (c), 6. doi:10.1002/pssc.200881286
Kandakkathara, Archana, Utkin, Ilya, Fedosejevs, Robert (2009) Surface enhanced Raman scattering of amino acids and peptides. physica status solidi (c), 6. doi:10.1002/pssc.200881288
Franta, Daniel, Necas, David, Frumar, Miloslav (2009) Modeling of dielectric response of GexSbyTez (GST) materials. physica status solidi (c), 6. doi:10.1002/pssc.200881290
Frey, J. B., Belev, G., Tousignant, O., Mani, H., Kasap, S. O. (2009) Dark current in multilayer stabilized amorphous selenium X-ray photoconductors. physica status solidi (c), 6. doi:10.1002/pssc.200881291
Tajima, J., Kubota, Y., Ishizuki, M., Nagashima, T., Togashi, R., Murakami, H., Kumagai, Y., Takada, K., Koukitu, A. (2009) Controlled formation of voids at the AlN/sapphire interface by sapphire decomposition for self-separation of the AlN layer. physica status solidi (c), 6. doi:10.1002/pssc.200880854
Vescan, Andrei, Hardtdegen, Hilde, Ketteniß, Nico, Eickelkamp, Martin, Noculak, Achim, Goliasch, Jens, Ahe, Martina v. d., Bay, Helge Lago, Schäpers, Thomas, Kalisch, Holger, Grützmacher, Detlev, Jansen, Rolf H. (2009) Study on growth and electrical performance of double-heterostructure AlGaN/GaN/AlGaN field-effect-transistors. physica status solidi (c), 6. doi:10.1002/pssc.200880855
Malinauskas, Tadas, Jarasiunas, Kestutis, Heuken, Michael, Scholz, Ferdinand, Brückner, Peter (2009) Diffusion and recombination of degenerate carrier plasma in GaN. physica status solidi (c), 6. doi:10.1002/pssc.200880856
Fukushima, Yoshihiro, Ogisu, Keita, Kuzuhara, Masaaki, Shiojima, Kenji (2009) I-V and C-V characteristics of rare-earth-metal/p-GaN Schottky contacts. physica status solidi (c), 6. doi:10.1002/pssc.200880857
Balaz, D., Kalna, K., Kuball, M., Uren, M. J., Asenov, A. (2009) Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: Self-consistent simulation study. physica status solidi (c), 6. doi:10.1002/pssc.200880858
Makiyama, Kozo, Ohki, Toshihiro, Kanamura, Masahito, Joshin, Kazukiyo, Imanishi, Kenji, Hara, Naoki, Kikkawa, Toshihide (2009) High-power GaN-HEMT with high three-terminal breakdown voltage for W-band applications. physica status solidi (c), 6. doi:10.1002/pssc.200880860
Kawai, Yohjiro, Ohsuka, Shinya, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu (2009) Improvement of crystalline quality of InGaN epilayers on various crystal planes of ZnO substrate by metal-organic vapor phase epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880863
Schmidtke, Bernd, Braun, Harald, Schwarz, Ulrich T., Queren, Désirée, Schillgalies, Marc, Lutgen, Stephan, Strauß, Uwe (2009) Time resolved measurement of longitudinal mode competition in 405 nm (Al,In)GaN laser diodes. physica status solidi (c), 6. doi:10.1002/pssc.200880864
Pasenow, B., Koch, S. W., Hader, J., Moloney, J. V., Sabathil, M., Linder, N., Lutgen, S. (2009) Auger losses in GaN-based quantum wells: Microscopic theory. physica status solidi (c), 6. doi:10.1002/pssc.200880865
Hagedorn, Sylvia, Richter, Eberhard, Netzel, Carsten, Zeimer, Ute, Weyers, Markus, Tränkle, Günther (2009) HVPE growth of AlxGa1-xN alloy layers. physica status solidi (c), 6. doi:10.1002/pssc.200880866
Wunderer, T., Lipski, F., Hertkorn, J., Schwaiger, S., Scholz, F. (2009) Fabrication of 3D InGaN/GaN structures providing semipolar GaN planes for efficient green light emission. physica status solidi (c), 6. doi:10.1002/pssc.200880867
Mata, R., Garro, N., Cros, A., Budagosky, J. A., García-Cristóbal, A., Vinattieri, A., Gurioli, M., Founta, S., Bellet-Amalric, E., Daudin, B. (2009) Anisotropic polarization of non-polar GaN quantum dot emission. physica status solidi (c), 6. doi:10.1002/pssc.200880868
Danhof, Julia, Vierheilig, Clemens, Schwarz, Ulrich T., Meyer, Tobias, Peter, Matthias, Hahn, Berthold, Maier, Markus, Wagner, Joachim (2009) Correlation of surface morphology and photoluminescence fluctuation in green light emitting InGaN/GaN quantum wells. physica status solidi (c), 6. doi:10.1002/pssc.200880869
Cordier, Y., Lecotonnec, A., Chenot, S., Baron, N., Nacer, F., Goullet, A., Lhermite, H., Kazzi, M. El, Regreny, P., Hollinger, G., Besland, M. P. (2009) Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111). physica status solidi (c), 6. doi:10.1002/pssc.200880870
Nevou, L., Mangeney, J., Tchernycheva, M., Julien, F. H., Guillot, F., Monroy, E., Sarigianni-dou, E. (2009) Room temperature intraband Raman emission and ultrafast carrier relaxation in GaN/AlN quantum dots. physica status solidi (c), 6. doi:10.1002/pssc.200880871
Meissner, Christian, Ploch, Simon, Pristovsek, Markus, Kneissl, Michael (2009) Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE. physica status solidi (c), 6. doi:10.1002/pssc.200880872
Wuu, Dong-Sing, Hsieh, Chuang-Yu, Laio, Tzu-Wei, Zheng, Xinhe, Horng, Ray-Hua (2009) Light extraction enhancement of sapphire-free InGaN LEDs using single- and double-side surface roughening techniques. physica status solidi (c), 6. doi:10.1002/pssc.200880873
Lee, Hyun-Jae, Ha, Jun-Seok, Lee, Hyo-Jong, Lee, S. W., Fujii, K., Hong, S. K., Chang, J. H., Cho, M. W., Goto, Takenari, Yao, T. (2009) Fabrication of free-standing GaN substrate using evaporable buffer layer (EBL). physica status solidi (c), 6. doi:10.1002/pssc.200880874
Mak, Giuseppe Y., Fu, W. Y., Lam, Edmund Y., Choi, H. W. (2009) Metallic nanoparticle array on GaN by microsphere lithography. physica status solidi (c), 6. doi:10.1002/pssc.200880875
Saito, Terubumi, Hitora, Toshimi, Hitora, Hisako, Kawai, Hiroji, Saito, Ichiro, Yamaguchi, Eiichi (2009) UV/VUV photodetectors using group III-nitride semiconductors. physica status solidi (c), 6. doi:10.1002/pssc.200880876
Fu, Y. K., Tun, C. J., Kuo, C. W., Kuo, C. H., Pan, C. J., Chi, G. C., Chen, M. C., Hong, H. F., Lan, S. M. (2009) The effect of absorption layer of different quantum well arrangement on optoelectronic characteristics of nitride-based photovoltaic cells grown by MOCVD. physica status solidi (c), 6. doi:10.1002/pssc.200880877
Cordier, Y., Moreno, J.-C., Baron, N., Frayssinet, E., Chenot, S., Damilano, B., Semond, F. (2009) AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001). physica status solidi (c), 6. doi:10.1002/pssc.200880878
Kandaswamy, Prem Kumar, Jalabert, Denis, Bougerol, Catherine, Bellet-Amalric, Edith, Lahourcade, Lise, Monroy, Eva (2009) Strain effects in GaN/AlN short-period superlattices for intersubband optoelectronics. physica status solidi (c), 6. doi:10.1002/pssc.200880879
Valcheva, E., Kirilov, K., Monemar, B., Amano, H., Akasaki, I. (2009) Tunneling effects in short period strained AlN/GaN superlattices. physica status solidi (c), 6. doi:10.1002/pssc.200880880
Vierheilig, Clemens, Schwarz, Ulrich T., Gmeinwieser, Nikolaus, Laubsch, Ansgar, Hahn, Berthold (2009) Bias dependent spatially resolved photoluminescence spectroscopy and photocurrent measurements of InGaN/GaN LED structures. physica status solidi (c), 6. doi:10.1002/pssc.200880881
Vitta, Pranciškus, Žukauskas, Artūras (2009) Thermal characterization of light-emitting diodes in the frequency domain. physica status solidi (c), 6. doi:10.1002/pssc.200880883
Kuwano, Noriyuki, Fukushima, Atsuhito, Kugiyama, Yuta, Ezaki, Tetsuya, Minami, Masahiro, Araki, Masahiko, Hoshino, Katsuyuki, Tadatomo, Kazuyuki (2009) Off-angle dependence of void formation and defect behavior in a -plane MOVPE-GaN on r -plane sapphire substrate. physica status solidi (c), 6. doi:10.1002/pssc.200880884
Marcon, Denis, Lorenz, Anne, Derluyn, Joff, Das, Jo, Medjdoub, Farid, Cheng, Kai, Degroote, Stefan, Leys, Maarten, Mertens, Robert, Germain, Marianne, Borghs, Gustaaf (2009) GaN-on-Si HEMT stress under high electric field condition. physica status solidi (c), 6. doi:10.1002/pssc.200880885
Belabbes, A., Kioseoglou, J., Komninou, Ph., Karakostas, Th. (2009) Energetics of oxygen adsorption and incorporation at InN polar surface: A first-principles study. physica status solidi (c), 6. doi:10.1002/pssc.200880886
Marona, L., Wiśniewski, P., Leszczyński, M., Prystawko, P., Grzegory, I., Suski, T., Porowski, S., Czernecki, R., Czerwinski, A., Pluska, M., Ratajczak, J., Perlin, P. (2009) What is new in nitride laser diodes reliability studies. physica status solidi (c), 6. doi:10.1002/pssc.200880887
Yuebin, Tao, Zhizhong, Chen, Zhijian, Yang, Liwen, Sang, Zhitao, Chen, Ding, Li, Hao, Fang, Yaobo, Pan, Jianfeng, Yan, Guangmin, Zhu, Cheng, Chen, Shitao, Li, Maosheng, Hao, Guoyi, Zhang (2009) Improvement of crystal quality of GaN grown on AlN template by MOCVD using HT-AlN interlayer. physica status solidi (c), 6. doi:10.1002/pssc.200880888
Usikov, Alexander, Shapovalov, Lisa, Ivantsov, Vladimir, Kovalenkov, Oleg, Syrkin, Alexander, Spiberg, Philippe, Brown, Robert (2009) GaN layer growth by HVPE on m-plane sapphire substrates. physica status solidi (c), 6. doi:10.1002/pssc.200880889
Gorczyca, I., Suski, T., Christensen, N. E., Svane, A. (2009) Gap bowing in Inx Ga1-xN and Inx Al1-xN under pressure. physica status solidi (c), 6. doi:10.1002/pssc.200880890
Lai, K. Y., Johnson, M. A. L., Paskova, T., Hanser, A. D., Udwary, K., Preble, E. A., Evans, K. R. (2009) Cathodoluminescence evaluation of subsurface damage in GaN substrate after polishing. physica status solidi (c), 6. doi:10.1002/pssc.200880891
Segal, A. S., Bazarevskiy, D. S., Bogdanov, M. V., Yakovlev, E. V. (2009) Modeling analysis of AlN and AlGaN HVPE. physica status solidi (c), 6. doi:10.1002/pssc.200880892
Laubsch, Ansgar, Bergbauer, Werner, Sabathil, Matthias, Strassburg, Martin, Lugauer, Hans, Peter, Matthias, Meyer, Tobias, Brüderl, Georg, Wagner, Joachim, Linder, Norbert, Streubel, Klaus, Hahn, Berthold (2009) Luminescence properties of thick InGaN quantum-wells. physica status solidi (c), 6. doi:10.1002/pssc.200880893
Togashi, R., Kamoshita, T., Adachi, H., Murakami, H., Kumagai, Y., Koukitu, A. (2009) Investigation of polarity dependent InN{0001} decomposition in N2 and H2 ambient. physica status solidi (c), 6. doi:10.1002/pssc.200880894
Kolbe, T., Knauer, A., Wenzel, H., Einfeldt, S., Kueller, V., Vogt, P., Weyers, M., Kneissl, M. (2009) Emission characteristics of InGaN multi quantum well light emitting diodes with differently strained InAlGaN barriers. physica status solidi (c), 6. doi:10.1002/pssc.200880895
Baghdadli, T., Hamady, S. Ould Saad, Gautier, S., Moudakir, T., Benyoucef, B., Ougazzaden, A. (2009) Electrical and structural characterizations of BGaN thin films grown by metal-organic vapor-phase epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880896
Sanorpim, Sakuntam, Jantawongrit, Papaporn, Kuntharin, Sman, Thanachayanont, Chanchana, Nakamura, Teruyuki, Katayama, Ryuji, Onabe, Kentaro (2009) Metastable cubic InN layers on GaAs (001) substrates grown by MBE: Growth condition and crystal structure. physica status solidi (c), 6. doi:10.1002/pssc.200880897
Segura-Ruiz, J., Garro, N., Cantarero, A., Iikawa, F., Denker, C., Malindretos, J., Rizzi, A. (2009) Optical properties of InN nanocolumns: Electron accumulation at InN non-polar surfaces and dependence on the growth conditions. physica status solidi (c), 6. doi:10.1002/pssc.200880898
Hums, Christoph, Gadanecz, Aniko, Dadgar, Armin, Bläsing, Jürgen, Lorenz, Pierre, Krischok, Stefan, Bertram, Frank, Franke, Alexander, Schaefer, J. A., Christen, Jürgen, Krost, Alois (2009) AlInN/GaN based multi quantum well structures - growth and optical properties. physica status solidi (c), 6. doi:10.1002/pssc.200880899
Young, Toby D., Marquardt, Oliver (2009) Influence of strain and polarisation on electronic properties of a GaN/AlN quantum dot. physica status solidi (c), 6. doi:10.1002/pssc.200880901
Eickelkamp, Martin, Ketteniß, Nico, Lautensack, Christian, Noculak, Achim, Kalisch, Holger, Jansen, Rolf H., Vescan, Andrei (2009) Processing approaches of AlGaN/GaN Metal Insulator Semiconductor Hetero Field Effect Transistors (MISHFET) on Si (111) substrates. physica status solidi (c), 6. doi:10.1002/pssc.200880902
Sridharan, Sriraaman, Yoder, P. D., Shen, S. C., Ryou, J. H., Dupuis, R. D. (2009) Geiger mode simulation of GaN homojunction avalanche photodetectors. physica status solidi (c), 6. doi:10.1002/pssc.200880903
Sadler, Thomas C., Kappers, Menno J., Oliver, Rachel A. (2009) Optimisation of GaN overgrowth of InAlN for DBRs. physica status solidi (c), 6. doi:10.1002/pssc.200880904
Suzuki, M., Sawai, S., Fukui, K., Nagamatsu, K., Amano, H. (2009) Photoluminescence and excitation spectrum of Mg-doped p-type AlXGa1-XN. physica status solidi (c), 6. doi:10.1002/pssc.200880905
Soukhoveev, Vitali, Volkova, Anna, Ivantsov, Vladimir, Kovalenkov, Oleg, Syrkin, Alexander, Usikov, Alexander (2009) Large area GaN and AlN template substrates fabricated by HVPE. physica status solidi (c), 6. doi:10.1002/pssc.200880906
Bulashevich, K. A., Ramm, M. S., Karpov, S. Yu. (2009) Assessment of various LED structure designs for high-current operation. physica status solidi (c), 6. doi:10.1002/pssc.200880751
Grenko, J. A., Ebert, C. W., Reynolds, C. L., Johnson, M. A. L., Hanser, A. D., Preble, E. A., Paskova, T., Evans, K. R. (2009) Modulation of mobility in homoepitaxially-grown AlGaN/GaN heterostructures. physica status solidi (c), 6. doi:10.1002/pssc.200880907
Nagano, T., Kangawa, Y., Kakimoto, K. (2009) Influence of compositional changes of source materials on AlN synthesis using Li-Al-N solvent. physica status solidi (c), 6. doi:10.1002/pssc.200880908
Nakao, Masashi, Kimura, Takeshi, Liu, Yuhuai, Ji, Shi-Yang, Matsuoka, Takashi (2009) Fabricating gratings on nitrides grown by MOVPE for DFB lasers. physica status solidi (c), 6. doi:10.1002/pssc.200880909
Tamboli, Adele C., McGroddy, Kelly C., Hu, Evelyn L. (2009) Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes. physica status solidi (c), 6. doi:10.1002/pssc.200880752
Kuzmik, J., Pozzovivo, G., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., Pogany, D., Gornik, E. (2009) Off-state breakdown in InAlN/AlN/GaN high electron mobility transistors. physica status solidi (c), 6. doi:10.1002/pssc.200880754
Kangawa, Y., Nagano, T., Kakimoto, K. (2009) Possibility of AlN vapor phase epitaxy using Li3N as a nitrogen source. physica status solidi (c), 6. doi:10.1002/pssc.200880910
Pretorius, Angelika, Aschenbrenner, Timo, Dartsch, Heiko, Figge, Stephan, Hommel, Detlef, Rosenauer, Andreas (2009) Transmission electron microscopical investigation of AlGaN/GaN distributed Bragg reflectors. physica status solidi (c), 6. doi:10.1002/pssc.200880755
Paskova, T., Preble, E. A., Hanser, A. D., Evans, K. R., Kröger, R., Paskov, P. P., Cheng, A. J., Park, M., Grenko, J. A., Johnson, M. A. L. (2009) Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics. physica status solidi (c), 6. doi:10.1002/pssc.200880912
(2009) Contents: Phys. Status Solidi C 6/S2. physica status solidi (c), 6. doi:10.1002/pssc.200960058
Nakajima, Atsushi, Itagaki, Keiichi, Horio, Kazushige (2009) Reduction of buffer-related current collapse in field-plate AlGaN/GaN HEMTs. physica status solidi (c), 6. doi:10.1002/pssc.200880756
Tessarek, Christian, Yamaguchi, Tomohiro, Figge, Stephan, Hommel, Detlef (2009) Improved capping layer growth towards increased stability of InGaN quantum dots. physica status solidi (c), 6. doi:10.1002/pssc.200880913
Grandjean, Nicolas, Ilegems, Marc, Suski, Tadek, Butté, Raphaël (2009) Preface: Phys. Status Solidi C 6/S2. physica status solidi (c), 6. doi:10.1002/pssc.200960059
Liu, Yuhuai, Kimura, Takeshi, Shimada, Taka-aki, Hirata, Masaki, Wakaba, Masaki, Nakao, Masashi, Ji, Shi-Yang, Matsuoka, Takashi (2009) MOVPE growth of InN: a comparison between a horizontal and a vertical reactor. physica status solidi (c), 6. doi:10.1002/pssc.200880914
Su, Y. K., Lee, H. C., Lin, J. C., Huang, K. C., Lin, W. J., Li, T. C., Chang, K. J. (2009) In0.11Ga0.89N-based p-i-n photodetector. physica status solidi (c), 6. doi:10.1002/pssc.200880757
Yuebin, Tao, Zhizhong, Chen, Zhijian, Yang, Liwen, Sang, Zhitao, Chen, Ding, Li, Hao, Fang, Yaobo, Pan, Jianfeng, Yan, Guangmin, Zhu, Cheng, Chen, Shitao, Li, Maosheng, Hao, Guoyi, Zhang (2009) Improvement of crystal quality of GaN grown on AlN template by MOCVD using HT-AlN interlayer [Phys. Status Solidi C 6, No. S2, S317-S320 (2009)]. physica status solidi (c), 6. doi:10.1002/pssc.200980991
Ikeda, Nariaki, Kaya, Syuusuke, Li, Jiang, Sato, Yoshihiro, Kokawa, Takuya, Kato, Sadahiro (2009) High power AlGaN/GaN HFETs on 4 inch Si substrates. physica status solidi (c), 6. doi:10.1002/pssc.200880759
Pristovsek, M., Stellmach, J., Leyer, M., Kneissl, M. (2009) Growth mode of InGaN on GaN (0001) in MOVPE. physica status solidi (c), 6. doi:10.1002/pssc.200880915
Fujiwara, Kenzo, Jimi, Hiroyuki, Kaneda, Kei (2009) Temperature-dependent droop of electroluminescence efficiency in blue (In,Ga)N quantum-well diodes. physica status solidi (c), 6. doi:10.1002/pssc.200880760
Schenk, H. P. D., Nemoz, M., Korytov, M., Vennéguès, P., Demolon, P., Dräger, A. D., Hangleiter, A., Charash, R., Maaskant, P. P., Corbett, B., Duboz, J. Y. (2009) AlInN optical confinement layers for edge emitting group III-nitride laser structures. physica status solidi (c), 6. doi:10.1002/pssc.200880916
(2009) Cover Picture: Phys. Status Solidi C 6/S2. physica status solidi (c), 6. doi:10.1002/pssc.200990007
Hofstetter, Daniel, Baumann, Esther, Giorgetta, Fabrizio R., Théron, Ricardo, Guillot, Fabien, Monroy, Eva, Golka, Sebastian, Strasser, Gottfried (2009) Monolithically integrated UV/IR-photodetectors based on an AlN/GaN-based superlattice grown on an AlGaN buffer layer. physica status solidi (c), 6. doi:10.1002/pssc.200880761
Saengkaew, Phannee, Dadgar, Armin, Blaesing, Juergen, Bastek, Barbara, Bertram, Frank, Reiher, Fabian, Hums, Christoph, Noltemeyer, Martin, Hempel, Thomas, Veit, Peter, Christen, Juergen, Krost, Alois (2009) MOVPE growth of high-quality Al0.1Ga0.9N on Si(111) substrates for UV-LEDs. physica status solidi (c), 6. doi:10.1002/pssc.200880917
(2009) Back Cover: Phys. Status Solidi C 6/S2. physica status solidi (c), 6. doi:10.1002/pssc.200990008
Veprek, Ratko G., Steiger, Sebastian, Witzigmann, Bernd (2009) GaN-based nanocolumn LEDs: Impact of strain engineering on the electro-optical performance. physica status solidi (c), 6. doi:10.1002/pssc.200880762
Paskov, P. P., Monemar, B., Paskova, T., Preble, E. A., Hanser, A. D., Evans, K. R. (2009) Optical characterization of bulk GaN substrates with c -, a -, and m -plane surfaces. physica status solidi (c), 6. doi:10.1002/pssc.200880918
Duboz, Jean-Yves, Brault, Julien, Truffer, Jean-Patrick, Robot, Jean-Alexandre, Robin, Kristelle, Reverchon, Jean Luc (2009) UV imaging based on AlGaN arrays. physica status solidi (c), 6. doi:10.1002/pssc.200880764
Feneberg, Martin, Däubler, Jürgen, Thonke, Klaus, Sauer, Rolf, Schley, Pascal, Goldhahn, Rüdiger (2009) Near band-gap photoluminescence of InN due to Mahan excitons. physica status solidi (c), 6. doi:10.1002/pssc.200880920
(2009) physica status solidi (c), 6. Wiley. doi:10.1002/pssc.v6.5s2
Wu, Jie-Jun, Katagiri, Yusuke, Okuura, Kazuki, Li, Da-Bing, Miyake, Hideto, Hiramatsu, Kazumasa (2009) Effects of initial conditions and growth temperature on the properties of nonpolar a -plane AlN grown by LP-HVPE. physica status solidi (c), 6. doi:10.1002/pssc.200880767
Hasegawa, Shigehiko, Seo, Jong-Uk, Uchida, Kanae, Tambo, Hiroyuki, Kameoka, Hisashi, Ishimaru, Manabu, Asahi, Hajime (2009) Influence of native silicon oxides on the growth of GaN nanorods on Si(001). physica status solidi (c), 6. doi:10.1002/pssc.200880921
Goh, W. H., Martin, J., Ould-Saad, S., Gautier, S., Sirenko, A. A., Martinez, A., Le Gratiet, L., Ramdane, A., Maloufi, N., Ougazzaden, A. (2009) Selective growth of GaN nanodots and nanostripes on 6H-SiC substrates by metal organic vapor phase epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880770
Behmenburg, H., Khoshroo, L. Rahimzadeh, Eickelkamp, M., Mauder, C., Fieger, M., Ketteniss, N., Woitok, J., Wamwangi, D., Wuttig, M., Hernandez, S. Estevez, Schäpers, T., Heuken, M., Vescan, A., Kalisch, H., Jansen, R. H. (2009) Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties. physica status solidi (c), 6. doi:10.1002/pssc.200880922
Toda, Y., Yamaguchi, K., Ishiguro, T., Hoshino, K., Tadatomo, K., Adachi, S. (2009) Spatial properties of excitonexciton interactions in GaN observed by four-wave-mixing spectroscopy. physica status solidi (c), 6. doi:10.1002/pssc.200880771
Norimichi, Noguchi, Hirayama, Hideki, Yatabe, Tohru, Kamata, Norihiko (2009) 222 nm single-peaked deep-UV LED with thin AlGaN quantum well layers. physica status solidi (c), 6. doi:10.1002/pssc.200880923
Terashima, Wataru, Hirayama, Hideki (2009) Design and fabrication of terahertz quantum cascade laser structure based on III-nitride semiconductors. physica status solidi (c), 6. doi:10.1002/pssc.200880772
Boyd, Adam R., Degroote, Stefan, Leys, Maarten, Schulte, Frank, Rockenfeller, Olaf, Luenenbuerger, Markus, Germain, Marianne, Kaeppeler, Johannes, Heuken, Michael (2009) Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD. physica status solidi (c), 6. doi:10.1002/pssc.200880925
Köhler, Klaus, Maier, Markus, Kirste, Lutz, Wiegert, Joachim, Menner, Hanspeter (2009) Determination of the surface potential of GaN:Si. physica status solidi (c), 6. doi:10.1002/pssc.200880773
Hui, K. N., Lai, P. T., Choi, H. W. (2009) Vertically-stacked color-tunable LEDs. physica status solidi (c), 6. doi:10.1002/pssc.200880927
Hasegawa, Fumio, Kambayashi, Hiroshi, Li, Jiang, Ikeda, Nariaki, Nomura, Takehiko, Kato, Sadahiro, Yoshida, Seiko (2009) Proposal and simulated results of a normally off AlGaN/GaN HFET structure with a charged floating gate. physica status solidi (c), 6. doi:10.1002/pssc.200880775
Murotani, Hideaki, Yamada, Yoichi, Taguchi, Tsunemasa, Ishibashi, Akihiko, Kawaguchi, Yasutoshi, Yokogawa, Toshiya (2009) Discrete luminescence bands in AlGaN-based quantum wells. physica status solidi (c), 6. doi:10.1002/pssc.200880928
Takano, Takayoshi, Hirayama, Hideki, Fujikawa, Sachie, Tsubaki, Kenji (2009) Realization of 270 nm band AlGaN based UV-LEDs on large area AlN templates with high crystalline quality. physica status solidi (c), 6. doi:10.1002/pssc.200880929
Yuan, Li, Wang, Maojun, Chen, Kevin J. (2009) On the stability of fluorine ions in AlGaN/GaN heterostructures: a molecular dynamics simulation study. physica status solidi (c), 6. doi:10.1002/pssc.200880776
Keyan, Zang, Yadong, Wang, Jin, Chua Soo (2009) Low dimensional nanostructured InGaN multi-quantum wells by selective area heteroepitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880777
Maeda, Narihiko, Hiroki, Masanobu, Makimoto, Toshiki, Enoki, Takatomo, Kobayashi, Takashi (2009) Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures. physica status solidi (c), 6. doi:10.1002/pssc.200880931
Tripathy, S., Dadgar, A., Zang, K. Y., Lin, V. K. X., Liu, Y. C., Teo, S. L., Yong, A. M., Soh, C. B., Chua, S. J., Bläsing, J., Christen, J., Krost, A. (2009) GaN-based deep green light emitting diodes on silicon-on-insulator substrates. physica status solidi (c), 6. doi:10.1002/pssc.200880778
Honda, Yoshio, Hikosaka, Toshiki, Yamaguchi, Masahito, Sawaki, Nobuhiko, Pozina, Galia, Karlsson, Fredrik, Darakchieva, Vanya, Paskov, Plamen, Monemar, Bo (2009) DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate. physica status solidi (c), 6. doi:10.1002/pssc.200880932
Chen, Wanjun, Wong, King-Yuen, Chenr, Kevin J. (2009) HEMT-compatible lateral field-effect rectifier using CF4 plasma treatment. physica status solidi (c), 6. doi:10.1002/pssc.200880779
Nakamura, Seiji, Takahashi, Noriyuki, Okumura, Tsugunori (2009) Detection of ppm-order hydrogen gas by Pd/AlGaN/GaN high electron mobility transistor-based sensors. physica status solidi (c), 6. doi:10.1002/pssc.200880933
Fujiwara, Kenzo, Katou, Hirofumi, Inoue, Takao, Sheu, Jin-Kong (2009) Asymmetric external field effects on photoluminescence efficiency in a blue (In,Ga)N quantum-well diode with an additional n -type electron reservoir layer. physica status solidi (c), 6. doi:10.1002/pssc.200880780
Claudel, Arnaud, Blanquet, Elisabeth, Chaussende, Didier, Pique, Didier, Pons, Michel (2009) Influence of total pressure and precursors flow rates on the growth of aluminium nitride by high temperature chemical vapor deposition (HTCVD). physica status solidi (c), 6. doi:10.1002/pssc.200880935
Baur, Johannes, Baumann, Frank, Peter, Matthias, Engl, Karl, Zehnder, Ulrich, Off, Juergen, Kuemmler, Volker, Kirsch, Markus, Strauss, Joerg, Wirth, Ralph, Streubel, Klaus, Hahn, Berthold (2009) Status of high efficiency and high power ThinGaN®-LED development. physica status solidi (c), 6. doi:10.1002/pssc.200880936
Wang, Maojun, Yuan, Li, Xu, Fujun, Shen, Bo, Chen, Kevin J. (2009) Study of diffusion and thermal stability of fluorine ions in GaN by Time-of-Flight Secondary Ion Mass Spectroscopy. physica status solidi (c), 6. doi:10.1002/pssc.200880781
Soh, C. B., Liu, W., Chua, S. J., Teng, J. H., Tan, Rayson J. N., Ang, S. S. (2009) Novel tunable phosphor-free white III-nitride light emitting diodes based on indium rich InGaN nanostructures. physica status solidi (c), 6. doi:10.1002/pssc.200880782
Watanabe, Naoki, Kimoto, Tsunenobu, Suda, Jun (2009) Determination of the thermo-optic coefficients of GaN and AlN up to 515 °C. physica status solidi (c), 6. doi:10.1002/pssc.200880937
Queren, Désirée, Avramescu, Adrian, Schillgalies, Marc, Peter, Matthias, Meyer, Tobias, Brüderl, Georg, Lutgen, Stephan, Strauß, Uwe (2009) Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift. physica status solidi (c), 6. doi:10.1002/pssc.200880783
Ploch, Simon, Meissner, Christian, Pristovsek, Markus, Kneissl, Michael (2009) Shape of indium nitride quantum dots and nanostructures grown by metal organic vapour phase epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880938
Kawai, Ryosuke, Mori, Toshiaki, Ochiai, Wataru, Suzuki, Atushi, Iwaya, Motoaki, Amano, Hiroshi, Kamiyama, Satoshi, Akasaki, Isamu (2009) High-reflectivity Ag-based p-type ohmic contacts for blue light-emitting diodes. physica status solidi (c), 6. doi:10.1002/pssc.200880785
Komissarova, Tatiana A., Jmerik, Valentin N., Mizerov, Andrey M., Shmidt, Nataliya M., Ber, Boris Ya., Kasantsev, Dmitry Yu., Ivanov, Sergey V. (2009) Electrical properties of Mg-doped GaN and AlxGa1-xN. physica status solidi (c), 6. doi:10.1002/pssc.200880939
Sugita, K., Hashimoto, A., Yamamoto, A. (2009) Effect of oxygen supply on MOVPE InN. physica status solidi (c), 6. doi:10.1002/pssc.200880940
Toropov, A. A., Shubina, T. V., Jmerik, V. N., Ivanov, S. V., Ogawa, Y., Minami, F. (2009) Resonant coupling between a gold-nanosphere plasmon and localized excitons in InGaN. physica status solidi (c), 6. doi:10.1002/pssc.200880786
Saito, K., Tajima, J., Kumagai, Y., Ishizuki, M., Takada, K., Morioka, H., Koukitu, A. (2009) Measurement of misorientation of AlN layer grown on (111)Si for freestanding substrate. physica status solidi (c), 6. doi:10.1002/pssc.200880787
Sugita, K., Hashimoto, A., Yamamoto, A. (2009) A porous layer: an evidence for the deterioration of MOVPE InN grown at high temperature (∼650 °C). physica status solidi (c), 6. doi:10.1002/pssc.200880941
Passow, Thorsten, Maier, Markus, Kunzer, Michael, Leancu, Crenguta-Columbina, Liu, Shangjing, Wiegert, Joachim, Schmidt, Ralf, Köhler, Klaus, Wagner, Joachim (2009) Influence of substrate dislocation density and quantum well width on the quantum efficiency of violet-emitting GaInN/GaN light-emitting diodes. physica status solidi (c), 6. doi:10.1002/pssc.200880789
Chu, Chen-Fu, Fan, Feng-Hsu, Cheng, Chao-Chen, Liu, Wen-Huan, Chu, Jiunn-Yi, Cheng, Hao-Chun, Lin, Chia-Feng, Chen, Kuei-Ting, Tran, Chuong Anh, Doan, Trung (2009) Effective heat dissipation and higher light extraction efficiency of GaN vertical light emitting diodes for solid state lighting applications. physica status solidi (c), 6. doi:10.1002/pssc.200880942
Mauder, C., Rahimzadeh Khoshroo, L., Behmenburg, H., Reuters, B., Bösing, M., Rzheutskii, M. V., Lutsenko, E. V., Yablonskii, G. P., Woitok, J. F., Chou, M. M. C., Heuken, M., Kalisch, H., Jansen, R. H. (2009) Impact of nitridation on structural and optical properties of MOVPE-grown m-plane GaN layers on LiAlO2. physica status solidi (c), 6. doi:10.1002/pssc.200880790
Lipskil, Frank, Thapa, Sarad B., Hertkorn, Joachim, Wunderer, Thomas, Schwaiger, Stephan, Scholz, Ferdinand, Feneberg, Martin, Wiedenmann, Michael, Thonke, Klaus, Hochmuth, Holger, Lorenz, Michael, Grundmann, Marius (2009) Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer. physica status solidi (c), 6. doi:10.1002/pssc.200880943
Sun, Yongjian, Qi, Shengli, Chen, Zhizhong, Kang, Xingning, Zhu, Guangmin, Chen, Cheng, Li, Shitao, Pan, Yaobo, Yan, Jianfeng, Deng, Junjing, Long, Hao, Hao, Maosheng, Yu, Tongjun, Zhang, Guoyi (2009) 33 μm free standing thick film vertical structure LED made by laser lift-off. physica status solidi (c), 6. doi:10.1002/pssc.200880791
Khoshroo, L. Rahimzadeh, Mauder, C., Behmenburg, H., Woitok, J., Zander, W., Gruis, J., Reuters, B., Schubert, J., Vescan, A., Heuken, M., Kalisch, H., Jansen, R. H. (2009) Epitaxy and characterisation of AlInGaN heterostructures for HEMT application. physica status solidi (c), 6. doi:10.1002/pssc.200880944
Krasovitskiy, Dmitry, Alexeev, Alexey, Byrnaz, Anton, Kokin, Sergey, Pavlenko, Maxim, Petrov, Stanislav, Pogorelsky, Michael, Pogorelsky, Yury, Sokolov, Igor, Sokolov, Michael, Shkurko, Alexey, Chaly, Victor (2009) AlN/AlGaN/GaN/AlGaN multilayer heterostructures with quantum well channel on heat conducting substrates for power microwave transistors. physica status solidi (c), 6. doi:10.1002/pssc.200880792
Sebald, K., Kalden, J., Voss, T., Gutowski, J., Aschenbrenner, T., Kunert, G., Kruse, C., Figge, S., Hommel, D. (2009) Optical properties of GaN nanorods grown catalyst-free on r-plane sapphire. physica status solidi (c), 6. doi:10.1002/pssc.200880945
Netzel, Carsten, Skriniarova, Jaroslava, Herms, Martin, Wenzel, Hans, Hoffmann, Veit, Knauer, Arne, Weyers, Markus (2009) Experimental method for scanning the surface depletion region in nitride based heterostructures. physica status solidi (c), 6. doi:10.1002/pssc.200880793
Wang, Q., Bai, J., Wang, T., Cullis, A. G., Parbrook, P. J., Ranalli, F. (2009) MOCVD growth and optical study of InGaN quantum dots and their emitters on a high quality GaN layer grown using a high temperature AlN as buffer. physica status solidi (c), 6. doi:10.1002/pssc.200880946
Łucznik, Bolesław, Pastuszka, Bogdan, Weyher, Jan L., Kamler, Grzegorz, Grzegory, Izabella, Porowski, Sylwester (2009) Bulk GaN crystals and wafers grown by HVPE without intentional doping. physica status solidi (c), 6. doi:10.1002/pssc.200880794
Davies, Samuel C., Mowbray, David J., Parbrook, Peter J., Ranalli, Fabio, Wang, Tao (2009) Optical spectroscopy of InGaN-GaN quantum dot ensembles. physica status solidi (c), 6. doi:10.1002/pssc.200880947
Badcock, Tom J., Dawson, Philip, Kappers, Menno J., McAleese, Clifford, Hollander, Jonathan L., Johnston, Carol F., Sridhara Rao, Duggi V., Sanchez, Ana M., Humphreys, Colin J. (2009) Optical polarisation anisotropy in a -plane GaN/AlGaN multiple quantum well structures. physica status solidi (c), 6. doi:10.1002/pssc.200880796
Ranalli, Fabio, Parbrook, Peter J., Bai, Jie, Lee, Kean B., Wang, Tao, Cullis, Antony G. (2009) Non-polar AlN and GaN/AlN on r-plane sapphire. physica status solidi (c), 6. doi:10.1002/pssc.200880948
Ishitani, Yoshihiro, Fujiwara, Masayuki, Wang, Xinqiang, Che, Song-Bek, Yoshikawa, Akihiko (2009) Hole density and anisotropic mobility of Mg-doped InN from the analysis of LO phonon-hole plasmon properties. physica status solidi (c), 6. doi:10.1002/pssc.200880949
Holc, Katarzyna, Wisniewski, Przemek, Leszczynski, Michal, Suski, Tadek, Grzegory, Iza, Czernecki, Robert, Grzanka, Szymon, Perlin, Piotr (2009) Violet blue laser mini-bars. physica status solidi (c), 6. doi:10.1002/pssc.200880797
Brown, David F., Rajan, Siddharth, Keller, Stacia, Hsieh, Yun-Hao, DenBaars, Steven P., Mishra, Umesh K. (2009) Electron transport in nitrogen-polar high electron mobility transistors. physica status solidi (c), 6. doi:10.1002/pssc.200880799
Laubsch, Ansgar, Sabathil, Matthias, Bergbauer, Werner, Strassburg, Martin, Lugauer, Hans, Peter, Matthias, Lutgen, Stephan, Linder, Norbert, Streubel, Klaus, Hader, Jörg, Moloney, Jerome V., Pasenow, Bernhard, Koch, Stephan W. (2009) On the origin of IQE-‘droop’ in InGaN LEDs. physica status solidi (c), 6. doi:10.1002/pssc.200880950
Detchprohm, T., Zhu, M., Zhao, W., Wang, Y., Li, Y., Xia, Y., Wetzel, C. (2009) Enhanced device performance of GaInN-based deep green light emitting diodes with V-defect-free active region. physica status solidi (c), 6. doi:10.1002/pssc.200880800
Kalden, Joachim, Sebald, Kathrin, Gutowski, Jürgen, Tessarek, Chistian, Aschenbrenner, Timo, Figge, Stephan, Hommel, Detlef (2009) Optical properties and modal gain of InGaN quantum dot stacks. physica status solidi (c), 6. doi:10.1002/pssc.200880951
Liu, Chaowang, Wang, Wang Nang, Denchitcharoen, Somyod, Gott, Alan, Shields, Philip A., Allsopp, Duncan W. E. (2009) GaN nano-pendeo-epitaxy on Si(111) substrates. physica status solidi (c), 6. doi:10.1002/pssc.200880801
Reurings, Floris, Tuomisto, Filip, Gallinat, Chad S., Koblmüller, Gregor, Speck, James S. (2009) Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions. physica status solidi (c), 6. doi:10.1002/pssc.200880952
Fujii, Katsushi, Sato, Keiichi, Kato, Takashi, Koike, Kayo, Yao, Takafumi (2009) Surface changes by GaN photoelectrochemical treatment using various electrolytes with and without C2H5OH. physica status solidi (c), 6. doi:10.1002/pssc.200880802
Metcalfe, Grace D., Readinger, Eric D., Shen, Hongen, Woodward, Nathaniel T., Dierolf, Volkmar, Wraback, Michael (2009) Energy levels of Nd3+ ions in GaN. physica status solidi (c), 6. doi:10.1002/pssc.200880953
Endoh, Akira, Watanabe, Issei, Yamashita, Yoshimi, Mimura, Takashi, Matsui, Toshiaki (2009) Effect of temperature on cryogenic characteristics of AlGaN/GaN MIS-HEMTs. physica status solidi (c), 6. doi:10.1002/pssc.200880803
Hwang, E. S., Che, S. B., Ishitani, Y., Yoshikawa, A. (2009) Comparative cathodoluminescence characterization of ultrathin InN wells/GaN matrix MQWs grown on bulk-GaN and MOVPE-GaN. physica status solidi (c), 6. doi:10.1002/pssc.200880954
Yamaguchi, A. Atsushi (2009) Polarization control of nonpolar-oriented InGaN quantum-well emission by utilizing (Al)InGaN alloy substrates. physica status solidi (c), 6. doi:10.1002/pssc.200880804
Fujikawa, Sachie, Hirayama, Hideki, Takano, Takayoshi, Tsubaki, Kenji (2009) Extremely high efficiency 280 nm-band emission from quaternary InAlGaN quantum wells realized by controlling Si-doped layers. physica status solidi (c), 6. doi:10.1002/pssc.200880955
Suzuki, Hikari, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Koukitu, Akinori (2009) Ab initio calculation for an initial growth process of GaN on (0001) and (000$ \bar 1 $) surfaces by vapor phase epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880805
Williamson, T. L., Hoffbauer, M. A., Yu, K. M., Reichertz, L. A., Hawkridge, M. E., Jones, R. E., Miller, N., Ager, J. W., Liliental-Weber, Z., Walukiewicz, W. (2009) Highly luminescent InxGa1-xN thin films grown over the entire composition range by energetic neutral atom beam lithography & epitaxy (ENABLE). physica status solidi (c), 6. doi:10.1002/pssc.200880956
Hirayama, Hideki, Fujikawa, Sachie, Norimatsu, Jun, Takano, Takayoshi, Tsubaki, Kenji, Kamata, Norihiko (2009) Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs. physica status solidi (c), 6. doi:10.1002/pssc.200880958
Yamaguchi, Tomohiro, Muto, Daisuke, Araki, Tsutomu, Maeda, Narihiko, Nanishi, Yasushi (2009) Novel InN growth method under In-rich condition on GaN/Al2O3 (0001) templates. physica status solidi (c), 6. doi:10.1002/pssc.200880806
Hirayama, Hideki, Norimatsu, Jun, Noguchi, Norimichi, Fujikawa, Sachie, Takano, Takayoshi, Tsubaki, Kenji, Kamata, Norihiko (2009) Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates. physica status solidi (c), 6. doi:10.1002/pssc.200880959
Kaneko, Masamitsu, Fujishima, Tatsuya, Chikamatsu, Kentaro, Yamaguchi, Atsushi, Kikawa, Junjiroh, Otake, Hirotaka, Nanishi, Yasushi (2009) Direct observation of crosssectional potential distribution in GaN-based MIS structures by Kelvin-probe force microscopy. physica status solidi (c), 6. doi:10.1002/pssc.200880807
Soh, C. B., Hartono, H., Chow, S. Y., Chua, S. J., Tripathy, S. (2009) Threading dislocations annihilation in regrown GaN film on nanoporous GaN template. physica status solidi (c), 6. doi:10.1002/pssc.200880808
Trybus, Elaissa, Doolittle, W. Alan, Moseley, Michael, Henderson, Walter, Billingsley, Daniel, Namkoong, Gon, Look, David C. (2009) Extremely high hole concentrations in c-plane GaN. physica status solidi (c), 6. doi:10.1002/pssc.200880962
Nagamatsu, Kentaro, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu (2009) Activation energy of Mg in Al0.25Ga0.75N and Al0.5Ga0.5N. physica status solidi (c), 6. doi:10.1002/pssc.200880810
Dräger, A. D., Jönen, H., Bremers, H., Rossow, U., Demolon, P., Schenk, H. P. D., Duboz, J. Y., Corbett, B., Hangleiter, A. (2009) Towards green lasing: ingredients for a green laser diode based on GaInN. physica status solidi (c), 6. doi:10.1002/pssc.200880963
Okada, Hiroshi, Takemoto, Kazumasa, Oikawa, Fumitake, Furukawa, Yuzo, Wakahara, Akihiro, Sato, Shin-ichiro, Ohshima, Takeshi (2009) Light emitting FET based-on spatially selective doping of Eu in AlGaN/GaN HEMT. physica status solidi (c), 6. doi:10.1002/pssc.200880811
Wieneke, Matthias, Bläsing, Jürgen, Dadgar, Armin, Veit, Peter, Metzner, Sebastian, Bertram, Frank, Christen, Jürgen, Krost, Alois (2009) Micro-structural anisotropy of a-plane GaN analyzed by high resolution X-ray diffraction. physica status solidi (c), 6. doi:10.1002/pssc.200880964
Satake, Akihiro, Soejima, Kenichi, Fujiwara, Kenzo (2009) Bias dependence of internal quantum efficiency and carrier capture in a green (In,Ga)N single-quantum-well diode. physica status solidi (c), 6. doi:10.1002/pssc.200880812
Bremers, H., Jönen, H., Hoffmann, L., Rossow, U., Hangleiter, A. (2009) Mechanism of thermal degradation in GaInN/GaN quantum wells. physica status solidi (c), 6. doi:10.1002/pssc.200880965
Managaki, Nobuto, Iizuka, Norio (2009) Dislocation density in AlN grown on multistacked GaN/AlN quantum dot layers by molecular beam epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880813
Chen, C.-H., Yu, K. M., Walukiewicz, W. (2009) Optical properties of ion beam synthesized nitrogen-rich GaN1-xAsx. physica status solidi (c), 6. doi:10.1002/pssc.200880966
Sato, Keiichi, Fujii, Katsushi, Koike, Kayo, Goto, Takenari, Yao, Takafumi (2009) Anomalous time variation of photocurrent in GaN during photoelectrochemical reaction for H2 gas generation in NaOH aqueous solution. physica status solidi (c), 6. doi:10.1002/pssc.200880814
Ager, Joel W., Reichertz, Lothar A., Cui, Yi, Romanyuk, Yaroslav E., Kreier, Daniel, Leone, Stephen R., Yu, Kin Man, Schaff, William J., Walukiewicz, Wladyslaw (2009) Electrical properties of InGaN-Si heterojunctions. physica status solidi (c), 6. doi:10.1002/pssc.200880967
Iwaya, Motoaki, Miura, Shuichi, Fujii, Takahiro, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu (2009) High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate. physica status solidi (c), 6. doi:10.1002/pssc.200880815
Yuki, Akihiko, Watanabe, Hiroshi, Che, Song-Bek, Ishitani, Yoshihiro, Yoshikawa, Akihiko (2009) 1-2 ML thick InN-based quantum wells with InGaN barriers for blue-green light emitters. physica status solidi (c), 6. doi:10.1002/pssc.200880969
Yu, Jeng-Wei, Wu, Han-Min, Yeh, Bo-Chun, Peng, Lung-Han (2009) DC characteristics and high frequency response of GaN nanowire metal-oxide-semiconductor field-effect transistor. physica status solidi (c), 6. doi:10.1002/pssc.200880816
Hiroki, Masanobu, Maeda, Narihiko, Kobayashi, Takashi (2009) Electrical properties and device characteristics of InAlN/AlGaN/ AlN/GaN heterostructure field effect transistors. physica status solidi (c), 6. doi:10.1002/pssc.200880970
Yao, Yong-zhao, Ohgaki, Takeshi, Matsumoto, Kenji, Sakaguchi, Isao, Wada, Yoshiki, Haneda, Hajime, Sekiguchi, Takashi, Ohashi, Naoki (2009) Growth and characterization of isotopic natGa15N by molecular-beam epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880818
Demangeot, F., Simeonov, D., Dussaigne, A., Butté, R., Grandjean, N. (2009) Homogeneous and inhomogeneous linewidth broadening of single polar GaN/AlN quantum dots. physica status solidi (c), 6. doi:10.1002/pssc.200880971
Jung, Helmut, Behtash, Reza, Thorpe, James R., Riepe, Klaus, Bourgeois, Franck, Blanck, Hervé, Chuvilin, Andrey, Kaiser, Ute (2009) Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface. physica status solidi (c), 6. doi:10.1002/pssc.200880819
Siekacz, M, Szańkowska, M. Ł., Feduniewicz-Zmuda, A., Smalc-Koziorowska, J., Cywiński, G., Grzanka, S., Wasilewski, Z. R., Grzegory, I., Łucznik, B., Porowski, S., Skierbiszewski, C. (2009) InGaN light emitting diodes for 415 nm-520 nm spectral range by plasma assisted MBE. physica status solidi (c), 6. doi:10.1002/pssc.200880973
Saito, Hiroshi, Nakagawa, Shun-ichiro, Ohishi, Masakazu, Imai, Kazuaki (2009) MBE growth of GaN and AlN using ammonia cluster ion beam - Dependence on cluster energy and growth temperature. physica status solidi (c), 6. doi:10.1002/pssc.200880820
Garrett, Gregory A., Shen, Hongen, Wraback, Michael, Tyagi, Anurag, Schmidt, Mathew C., Speck, James S., DenBaars, Steven P., Nakamaura, Shuji (2009) Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates. physica status solidi (c), 6. doi:10.1002/pssc.200880974
Chen, Z. Z., Qi, S. L., Liu, P., Yu, T. J., Wang, C. D., He, Z. K., Tong, Y. Z., Pan, Y. B., Hao, M. S., Zhang, G. Y. (2009) Characterization of asymmetric GaN/InGaN multiple quantum well. physica status solidi (c), 6. doi:10.1002/pssc.200880821
Hawkridge, Michael E., Liliental-Weber, Zuzanna, Yu, Kin M., Reichertz, Lothar A., Schaff, William J., Ager, Joel W., Walukiewicz, Wladek (2009) Stacking faults and phase changes in Mg-doped InGaN grown on Si. physica status solidi (c), 6. doi:10.1002/pssc.200880978
Yeh, P.-C., Hwa, M.-C., Yu, J.-W., Wu, H.-M., Tsai, H.-L., Lai, C.-M., Huang, J.-J., Yang, J.-R., Peng, L.-H. (2009) Photon-assisted tunneling in GaN nanowire white light emitting diodes. physica status solidi (c), 6. doi:10.1002/pssc.200880822
Schmidt, Th., Flege, J. I., Siebert, M., Figge, S., Yamaguchi, T., Hommel, D., Falta, J. (2009) Low-temperature growth of InGaN/GaN nano-islands investigated by grazing-incidence X-ray diffraction. physica status solidi (c), 6. doi:10.1002/pssc.200880979
Takagi, Yusuke, Muto, Daisuke, Yamaguchi, Tomohiro, Araki, Tsutomu, Nanishi, Yasushi (2009) Growth of M -plane (10-10) InN on LiAlO2 (100) substrate. physica status solidi (c), 6. doi:10.1002/pssc.200880980
Nagashima, Toru, Hironaka, Keiichiro, Ishizuki, Masanari, Kumagai, Yoshinao, Koukitu, Akinori, Takada, Kazuya (2009) Polarity control and preparation of AlN nano-islands by hydride vapor phase epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880823
Oliver, Rachel A., Bakshi, Subhankar Das, Sumner, Joy, Kappers, Menno J. (2009) Scanning capacitance microscopy as a tool for the assessment of unintentional doping in GaN. physica status solidi (c), 6. doi:10.1002/pssc.200880824
Shibata, E., Kaneko, M., Kikawa, J., Horiuchi, Y., Otake, H., Chikamatsu, K., Yamaguchi, A., Fujishima, T., Nanishi, Y. (2009) Dependence of annealing temperature on electrical properties of GaN MIS capacitors. physica status solidi (c), 6. doi:10.1002/pssc.200880981
Fu, Wai Yuen, Wong, Kenneth Kin-Yip, Choi, Hoi Wai (2009) A novel GaN photonic crystal structure comprising nanopillars with inclined sidewalls. physica status solidi (c), 6. doi:10.1002/pssc.200880827
Nozawa, Hirokazu, Takagi, Yusuke, Harui, Satoshi, Muto, Daisuke, Yamaguchi, Tomohiro, Araki, Tsutomu, Nanishi, Yasushi (2009) TEM characterization of M -plane InN grown on (100) LiAlO2 substrate by RF-MBE. physica status solidi (c), 6. doi:10.1002/pssc.200880982
Baron, N., Leroux, M., Zeggaoui, N., Corfdir, P., Semond, F., Bougrioua, Z., Azize, M., Cordier, Y., Massies, J. (2009) Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors. physica status solidi (c), 6. doi:10.1002/pssc.200880828
Brunner, Frank, Reentilä, Outi, Würfl, Joachim, Weyers, Markus (2009) Strain engineering of AlGaN-GaN HFETs grown on 3 inch 4H-SiC. physica status solidi (c), 6. doi:10.1002/pssc.200880984
Ishiguro, T., Toda, Y., Adachi, S., Chichibu, S. F. (2009) Study on dephasing dynamics of Exciton Fine Structure in GaN. physica status solidi (c), 6. doi:10.1002/pssc.200880829
Liliental-Weber, Z., Yu, K.M., Hawkridge, M., Bedair, S., Berman, A.E., Emara, A., Domagala, J., Bak-Misiuk, J. (2009) Spontaneous stratification of InGaN layers and its influence on optical properties. physica status solidi (c), 6. doi:10.1002/pssc.200880985
Onojima, Norio, Hirose, Nobumitsu, Mimura, Takashi, Matsui, Toshiaki (2009) Enhancement in electrical properties of GaN heterostructure field-effect transistor by Si atom deposition on AlGaN barrier surface. physica status solidi (c), 6. doi:10.1002/pssc.200880830
Aschenbrenner, T., Tessarek, C., Figge, S., Hommel, D. (2009) Incorporation of QD ensembles in separate confinement heterostructures for long wavelength emission. physica status solidi (c), 6. doi:10.1002/pssc.200880986
Aleksiejunas, Ramunas, Azize, Mohamed, Bougrioua, Zahia, Malinauskas, Tadas, Nargelas, Saulius, Jarasiunas, Kestutis (2009) Carrier dynamics in Fe-doped GaN epilayers. physica status solidi (c), 6. doi:10.1002/pssc.200880832
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(2009, June) physica status solidi (c) Vol. 6 (6) Wiley
(2009, January) physica status solidi (c) Vol. 6 (1) Wiley
(2009, October) physica status solidi (c) Vol. 6 (10) Wiley
(2009, November) physica status solidi (c) Vol. 6 (11) Wiley
(2009, December) physica status solidi (c) Vol. 6 (12) Wiley
(2009, February) physica status solidi (c) Vol. 6 (2) Wiley
(2009, March) physica status solidi (c) Vol. 6 (3) Wiley
(2009, April) physica status solidi (c) Vol. 6 (4) Wiley
(2009, May) physica status solidi (c) Vol. 6 (5) Wiley
(2009, July) physica status solidi (c) Vol. 6 (7) Wiley
(2009, August) physica status solidi (c) Vol. 6 (8) Wiley
 
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