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Watanabe, Naoki, Kimoto, Tsunenobu, Suda, Jun (2009) Determination of the thermo-optic coefficients of GaN and AlN up to 515 °C. physica status solidi (c), 6. doi:10.1002/pssc.200880937

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Reference TypeJournal (article/letter/editorial)
TitleDetermination of the thermo-optic coefficients of GaN and AlN up to 515 °C
Journalphysica status solidi (c)
AuthorsWatanabe, NaokiAuthor
Kimoto, TsunenobuAuthor
Suda, JunAuthor
Year2009 (June)Volume6
PublisherWiley
DOIdoi:10.1002/pssc.200880937Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5117328Long-form Identifiermindat:1:5:5117328:7
GUID0
Full ReferenceWatanabe, Naoki, Kimoto, Tsunenobu, Suda, Jun (2009) Determination of the thermo-optic coefficients of GaN and AlN up to 515 °C. physica status solidi (c), 6. doi:10.1002/pssc.200880937
Plain TextWatanabe, Naoki, Kimoto, Tsunenobu, Suda, Jun (2009) Determination of the thermo-optic coefficients of GaN and AlN up to 515 °C. physica status solidi (c), 6. doi:10.1002/pssc.200880937
In(2009) physica status solidi (c) Vol. 6. Wiley

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Watanabe, Naoki, Kimoto, Tsunenobu, Suda, Jun (2012) Thermo-Optic Coefficients of 4H-SiC, GaN, and AlN for Ultraviolet to Infrared Regions up to 500 $^{\circ}$C. Japanese Journal of Applied Physics, 51. 112101 doi:10.1143/jjap.51.112101
Watanabe, Naoki, Kimoto, Tsunenobu, Suda, Jun (2012) Thermo-Optic Coefficients of 4H-SiC, GaN, and AlN for Ultraviolet to Infrared Regions up to 500 °C. Japanese Journal of Applied Physics, 51 (11) 112101 doi:10.7567/jjap.51.112101
Watanabe, Naoki, Kimoto, Tsunenobu, Suda, Jun (2008) The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C. Journal of Applied Physics, 104 (10). 106101pp. doi:10.1063/1.3021148
Okumura, Hironori, Kimoto, Tsunenobu, Suda, Jun (2010) Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC(0001). physica status solidi (c), 7 (7). 2094-2096 doi:10.1002/pssc.200983579
Kaneko, Mitsuaki, Kimoto, Tsunenobu, Suda, Jun (2016) Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE. physica status solidi (b), 253 (5). 814-818 doi:10.1002/pssb.201552649
Okumura, Hironori, Horita, Masahiro, Kimoto, Tsunenobu, Suda, Jun (2009) Observation of novel defect structure in 2H-AlN grown on 6H-SiC(0001) substrates with 3-bilayer-height step-and-terrace structures. physica status solidi (a), 206 (6). 1187-1189 doi:10.1002/pssa.200880934
Onojima, N., Kaido, J., Suda, J., Kimoto, T. (2005) Molecular-beam epitaxy of AlN on off-oriented SiC and demonstration of MISFET using AlN/SiC interface. physica status solidi (c), 2 (7). 2643-2646 doi:10.1002/pssc.200461526
Noborio, Masato, Suda, Jun, Beljakowa, Svetlana, Krieger, Michael, Kimoto, Tsunenobu (2009) 4H-SiC MISFETs with nitrogen-containing insulators. physica status solidi (a), 206 (10). 2374-2390 doi:10.1002/pssa.200925247
Horita, M., Suda, J., Kimoto, T. (2006) Impact of III/V ratio on polytype and crystalline quality of AlN grown on 4H-SiC (110) substrate by molecular-beam epitaxy. physica status solidi (c), 3 (6). 1503-1506 doi:10.1002/pssc.200565253
Managaki, Nobuto, Iizuka, Norio (2009) Dislocation density in AlN grown on multistacked GaN/AlN quantum dot layers by molecular beam epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880813
Young, Toby D., Marquardt, Oliver (2009) Influence of strain and polarisation on electronic properties of a GaN/AlN quantum dot. physica status solidi (c), 6. doi:10.1002/pssc.200880901
 
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