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Nevou, L., Mangeney, J., Tchernycheva, M., Julien, F. H., Guillot, F., Monroy, E., Sarigianni-dou, E. (2009) Room temperature intraband Raman emission and ultrafast carrier relaxation in GaN/AlN quantum dots. physica status solidi (c), 6. doi:10.1002/pssc.200880871

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Reference TypeJournal (article/letter/editorial)
TitleRoom temperature intraband Raman emission and ultrafast carrier relaxation in GaN/AlN quantum dots
Journalphysica status solidi (c)
AuthorsNevou, L.Author
Mangeney, J.Author
Tchernycheva, M.Author
Julien, F. H.Author
Guillot, F.Author
Monroy, E.Author
Sarigianni-dou, E.Author
Year2009 (June)Volume6
PublisherWiley
DOIdoi:10.1002/pssc.200880871Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5117213Long-form Identifiermindat:1:5:5117213:6
GUID0
Full ReferenceNevou, L., Mangeney, J., Tchernycheva, M., Julien, F. H., Guillot, F., Monroy, E., Sarigianni-dou, E. (2009) Room temperature intraband Raman emission and ultrafast carrier relaxation in GaN/AlN quantum dots. physica status solidi (c), 6. doi:10.1002/pssc.200880871
Plain TextNevou, L., Mangeney, J., Tchernycheva, M., Julien, F. H., Guillot, F., Monroy, E., Sarigianni-dou, E. (2009) Room temperature intraband Raman emission and ultrafast carrier relaxation in GaN/AlN quantum dots. physica status solidi (c), 6. doi:10.1002/pssc.200880871
In(2009) physica status solidi (c) Vol. 6. Wiley

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Nevou, L., Mangeney, J., Tchernycheva, M., Julien, F. H., Guillot, F., Monroy, E. (2009) Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots. Applied Physics Letters, 94 (13). 132104pp. doi:10.1063/1.3114424
Nevou, L., Julien, F. H., Tchernycheva, M., Guillot, F., Sarigiannidou, E., Monroy, E. (2008) Near-infrared intersubband emission from GaN/AlN quantum dots and quantum wells. physica status solidi (c), 5 (6). 2120-2122 doi:10.1002/pssc.200778469
Nevou, L., Julien, F. H., Tchernycheva, M., Guillot, F., Monroy, E., Sarigiannidou, E. (2008) Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature. Applied Physics Letters, 92 (16). 161105pp. doi:10.1063/1.2913756
Doyennette, L., Vardi, A., Guillot, F., Nevou, L., Tchernycheva, M., Lupu, A., Colombelli, R., Bahir, G., Monroy, E., Julien, F. H. (2006) Intraband photodetection at 1.3–1.5 µm in self-organized GaN/AlN quantum dots. physica status solidi (b), 243 (15). 3993-3997 doi:10.1002/pssb.200671610
Vardi, A., Akopian, N., Bahir, G., Doyennette, L., Tchernycheva, M., Nevou, L., Julien, F. H., Guillot, F., Monroy, E. (2006) Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength. Applied Physics Letters, 88 (14). 143101pp. doi:10.1063/1.2186108
Tchernycheva, M., Nevou, L., Doyennette, L., Julien, F. H., Guillot, F., Monroy, E., Remmele, T., Albrecht, M. (2006) Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells. physica status solidi (b), 243 (7). 1630-1633 doi:10.1002/pssb.200565116
Nevou, L., Tchernycheva, M., Julien, F. H., Guillot, F., Monroy, E. (2007) Short wavelength (λ=2.13μm) intersubband luminescence from GaN∕AlN quantum wells at room temperature. Applied Physics Letters, 90 (12). 121106pp. doi:10.1063/1.2715001
Tchernycheva, M., Nevou, L., Doyennette, L., Helman, A., Colombelli, R., Julien, F. H., Guillot, F., Monroy, E., Shibata, T., Tanaka, M. (2005) Intraband absorption of doped GaN∕AlN quantum dots at telecommunication wavelengths. Applied Physics Letters, 87 (10). 101912pp. doi:10.1063/1.2042540
Guillot, F., Tchernycheva, M., Nevou, L., Doyennette, L., Monroy, E., Julien, F. H., Dang, Le Si, Remmele, T., Albrecht, M., Shibata, T., Tanaka, M. (2006) Si-doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths. physica status solidi (a), 203 (7). 1754-1758 doi:10.1002/pssa.200565129
Julien, F. H., Tchernycheva, M., Nevou, L., Doyennette, L., Colombelli, R., Warde, E., Guillot, F., Monroy, E. (2007) Nitride intersubband devices: prospects and recent developments. physica status solidi (a), 204 (6). 1987-1995 doi:10.1002/pssa.200674894
Tchernycheva, M., Macchadani, H., Nevou, L., Mangeney, J., Julien, F. H., Kandaswamy, P. K., Wirthmüller, A., Monroy, E., Vardi, A., Schacham, S., Bahir, G. (2010) GaN/AlGaN nanostructures for intersubband optoelectronics. physica status solidi (a), 207 (6). 1421-1424 doi:10.1002/pssa.200983565
 
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