Boyd, Adam R., Degroote, Stefan, Leys, Maarten, Schulte, Frank, Rockenfeller, Olaf, Luenenbuerger, Markus, Germain, Marianne, Kaeppeler, Johannes, Heuken, Michael (2009) Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD. physica status solidi (c), 6. doi:10.1002/pssc.200880925

See Also

These are possibly similar items as determined by title/reference text matching only.

	Visalli, Domenica, Van Hove, Marleen, Derluyn, Joff, Cheng, Kai, Degroote, Stefan, Leys, Maarten, Germain, Marianne, Borghs, Gustaaf (2009) High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates. physica status solidi (c), 6. doi:10.1002/pssc.200880835
	Marcon, Denis, Lorenz, Anne, Derluyn, Joff, Das, Jo, Medjdoub, Farid, Cheng, Kai, Degroote, Stefan, Leys, Maarten, Mertens, Robert, Germain, Marianne, Borghs, Gustaaf (2009) GaN-on-Si HEMT stress under high electric field condition. physica status solidi (c), 6. doi:10.1002/pssc.200880885
	Lorenz, Anne, Derluyn, Joff, Das, Jo, Cheng, Kai, Degroote, Stefan, Medjdoub, Farid, Germain, Marianne, Borghs, Gustaaf (2009) Influence of thermal anneal steps on the current collapse of fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs. physica status solidi (c), 6. doi:10.1002/pssc.200880838
	Cheng, Kai, Leys, M., Derluyn, J., Balachander, K., Degroote, S., Germain, M., Borghs, G. (2008) AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE. physica status solidi (c), 5 (6). 1600-1602 doi:10.1002/pssc.200778518
	Cheng, Kai, Degroote, S., Leys, M., Medjdoub, F., Derluyn, J., Sijmus, B., Germain, M., Borghs, G. (2010) Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPE. physica status solidi (c), 7 (7). 1967-1969 doi:10.1002/pssc.200983552
	Cheng, Kai, Motsnyi, V., Leys, M., Degroote, S., Sijmus, B., Germain, M., Borghs, G. (2008) Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE. physica status solidi (c), 5 (6). 1624-1626 doi:10.1002/pssc.200778547
	Cheng, Kai, Degroote, S., Leys, M., Van Daele, B., Germain, M., Van Tendeloo, G., Borghs, G. (2007) Single crystalline GaN grown on porous Si(111) by MOVPE. physica status solidi (c), 4 (6). 1908-1912 doi:10.1002/pssc.200674316
	Visalli, Domenica, Van Hove, Marleen, Derluyn, Joff, Degroote, Stefan, Leys, Maarten, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf (2009) AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance. Japanese Journal of Applied Physics, 48 (4) 4 doi:10.1143/jjap.48.04c101
	Cheng, Kai, Leys, Maarten, Degroote, Stefan, Derluyn, Joff, Sijmus, Brian, Favia, Paola, Richard, Olivier, Bender, Hugo, Germain, Marianne, Borghs, Gustaaf (2008) AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity. Japanese Journal of Applied Physics, 47 (3) 1553-1555 doi:10.1143/jjap.47.1553
	Salcianu, C. O., Thrush, E. J., Plumb, R. G., Boyd, A. R., Rockenfeller, O., Schmitz, D., Heuken, M., Humphreys, C. J. (2008) Palladium-based on-wafer electroluminescence studies of GaN-based LED structures. physica status solidi (c), 5 (6). 2219-2221 doi:10.1002/pssc.200778576
	Brunner, Frank, Reentilä, Outi, Würfl, Joachim, Weyers, Markus (2009) Strain engineering of AlGaN-GaN HFETs grown on 3 inch 4H-SiC. physica status solidi (c), 6. doi:10.1002/pssc.200880984