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Yuan, Li, Wang, Maojun, Chen, Kevin J. (2009) On the stability of fluorine ions in AlGaN/GaN heterostructures: a molecular dynamics simulation study. physica status solidi (c), 6. doi:10.1002/pssc.200880776

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Reference TypeJournal (article/letter/editorial)
TitleOn the stability of fluorine ions in AlGaN/GaN heterostructures: a molecular dynamics simulation study
Journalphysica status solidi (c)
AuthorsYuan, LiAuthor
Wang, MaojunAuthor
Chen, Kevin J.Author
Year2009 (June)Volume6
PublisherWiley
DOIdoi:10.1002/pssc.200880776Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5117061Long-form Identifiermindat:1:5:5117061:5
GUID0
Full ReferenceYuan, Li, Wang, Maojun, Chen, Kevin J. (2009) On the stability of fluorine ions in AlGaN/GaN heterostructures: a molecular dynamics simulation study. physica status solidi (c), 6. doi:10.1002/pssc.200880776
Plain TextYuan, Li, Wang, Maojun, Chen, Kevin J. (2009) On the stability of fluorine ions in AlGaN/GaN heterostructures: a molecular dynamics simulation study. physica status solidi (c), 6. doi:10.1002/pssc.200880776
In(2009) physica status solidi (c) Vol. 6. Wiley

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Wang, Maojun, Yuan, Li, Xu, Fujun, Shen, Bo, Chen, Kevin J. (2009) Study of diffusion and thermal stability of fluorine ions in GaN by Time-of-Flight Secondary Ion Mass Spectroscopy. physica status solidi (c), 6. doi:10.1002/pssc.200880781
Wang, Maojun, Cheng, Chung Choi, Beling, Chris D., Fung, Stevenson, Chen, Kevin J. (2010) Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy. physica status solidi (a), 207 (6). 1332-1334 doi:10.1002/pssa.200983463
Huang, Sen, Chen, Hongwei, Chen, Kevin J. (2011) Surface properties of AlxGa1-xN/GaN heterostructures treated by fluorine plasma: an XPS study. physica status solidi (c), 8 (7). 2200-2203 doi:10.1002/pssc.201000927
Chen, Hongwei, Yuan, Li, Zhou, Qi, Zhou, Chunhua, Chen, Kevin J. (2012) Normally-off AlGaN/GaN power tunnel-junction FETs. physica status solidi (c), 9 (3). 871-874 doi:10.1002/pssc.201100338
Yuan, L., Wang, M. J., Chen, K. J. (2008) Fluorine plasma ion implantation in AlGaN∕GaN heterostructures: A molecular dynamics simulation study. Applied Physics Letters, 92 (10). 102109pp. doi:10.1063/1.2896646
Jia, Shuo, Cai, Yong, Wang, Deliang, Zhang, Baoshun, Lau, Kei May, Chen, Kevin J. (2006) Enhancement-mode AlGaN/GaN HEMTs on silicon substrate. physica status solidi (c), 3 (6). 2368-2372 doi:10.1002/pssc.200565119
Balaz, D., Kalna, K., Kuball, M., Uren, M. J., Asenov, A. (2009) Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: Self-consistent simulation study. physica status solidi (c), 6. doi:10.1002/pssc.200880858
Yuan, L., Wang, M. J., Chen, K. J. (2008) Molecular dynamics calculation of the fluorine ions’ potential energies in AlGaN/GaN heterostructures. Journal of Applied Physics, 104 (11). 116106pp. doi:10.1063/1.3028208
Li, B. K., Chen, K. J., Lau, K. M., Ge, W. K., Wang, J. N. (2008) Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity. physica status solidi (c), 5 (6). 1892-1894 doi:10.1002/pssc.200778459
Fu, Junxue, Chen, Kevin J (2011) Microspheres manipulation system by patterned AlGaN/GaN 2DEG electrodes. physica status solidi (c), 8 (7). 2479-2482 doi:10.1002/pssc.201001006
Yang, Shu, Jiang, Qimeng, Li, Baikui, Tang, Zhikai, Chen, Kevin J. (2014) GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures. physica status solidi (c), 11 (3). 949-952 doi:10.1002/pssc.201300439
 
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