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Li, B. K., Chen, K. J., Lau, K. M., Ge, W. K., Wang, J. N. (2008) Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity. physica status solidi (c), 5 (6). 1892-1894 doi:10.1002/pssc.200778459

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity
Journalphysica status solidi (c)
AuthorsLi, B. K.Author
Chen, K. J.Author
Lau, K. M.Author
Ge, W. K.Author
Wang, J. N.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778459Search in ResearchGate
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Mindat Ref. ID5116095Long-form Identifiermindat:1:5:5116095:5
GUID0
Full ReferenceLi, B. K., Chen, K. J., Lau, K. M., Ge, W. K., Wang, J. N. (2008) Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity. physica status solidi (c), 5 (6). 1892-1894 doi:10.1002/pssc.200778459
Plain TextLi, B. K., Chen, K. J., Lau, K. M., Ge, W. K., Wang, J. N. (2008) Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity. physica status solidi (c), 5 (6). 1892-1894 doi:10.1002/pssc.200778459
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Li, B. K., Ge, W. K., Wang, J. N., Chen, K. J. (2008) Persistent photoconductivity and carrier transport in AlGaN∕GaN heterostructures treated by fluorine plasma. Applied Physics Letters, 92 (8). 82105pp. doi:10.1063/1.2888743
Liu, J., Zhou, Y. G., Zhu, J., Lau, K. M., Chen, K. J. (2006) AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch. physica status solidi (c), 3 (6). 2312-2316 doi:10.1002/pssc.200565168
Li, B. K., Wang, M. J., Chen, K. J., Wang, J. N. (2010) Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface. physica status solidi (c), 7 (7). 1961-1963 doi:10.1002/pssc.200983533
Sawada, T., Takahashi, K., Imai, K., Suzuki, K., Kimura, N., Kitamori, K. (2008) Influence of surface preparation and i-AlGaN thickness on electrical properties of i-AlGaN/GaN heterostructures. physica status solidi (c), 5 (6). 1695-1698 doi:10.1002/pssc.200778591
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Li, B. K., Wang, M. J., Chen, K. J., Wang, J. N. (2011) Enhanced electroluminescence from the fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode. Applied Physics Letters, 99 (6). 62101pp. doi:10.1063/1.3622643
Yuan, Li, Wang, Maojun, Chen, Kevin J. (2009) On the stability of fluorine ions in AlGaN/GaN heterostructures: a molecular dynamics simulation study. physica status solidi (c), 6. doi:10.1002/pssc.200880776
Kudrawiec, R., Syperek, M., Misiewicz, J., Rudziński, M., Grzegorczyk, A. P., Hageman, P. R., Larsen, P. K. (2006) Below bandgap transitions in an AlGaN/GaN transistor heterostructure observed by photoreflectance spectroscopy. physica status solidi (c), 3 (6). 2117-2120 doi:10.1002/pssc.200565330
Yoshida, S., Li, J., Ikeda, N., Hataya, K. (2005) AlGaN/GaN field effect Schottky barrier diode (FESBD). physica status solidi (c), 2 (7). 2602-2606 doi:10.1002/pssc.200461300
Chikhaoui, W., Bluet, J M., Bru-Chevallier, C., Dua, C., Aubry, R. (2010) Deep traps analysis in AlGaN/GaN heterostructure transistors. physica status solidi (c), 7 (1). 92-95 doi:10.1002/pssc.200982634
Yoshida, S., Li, J., Ikeda, N. (2005) 573 K operation AlGaN/GaN HFET with enhancement operation on Si substrate. physica status solidi (c), 2 (7). 2593-2597 doi:10.1002/pssc.200461302
 
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