登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Li, B. K., Wang, M. J., Chen, K. J., Wang, J. N. (2011) Enhanced electroluminescence from the fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode. Applied Physics Letters, 99 (6). 62101pp. doi:10.1063/1.3622643

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleEnhanced electroluminescence from the fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode
JournalApplied Physics Letters
AuthorsLi, B. K.Author
Wang, M. J.Author
Chen, K. J.Author
Wang, J. N.Author
Year2011 (August 8)Volume99
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.3622643Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8599337Long-form Identifiermindat:1:5:8599337:6
GUID0
Full ReferenceLi, B. K., Wang, M. J., Chen, K. J., Wang, J. N. (2011) Enhanced electroluminescence from the fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode. Applied Physics Letters, 99 (6). 62101pp. doi:10.1063/1.3622643
Plain TextLi, B. K., Wang, M. J., Chen, K. J., Wang, J. N. (2011) Enhanced electroluminescence from the fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode. Applied Physics Letters, 99 (6). 62101pp. doi:10.1063/1.3622643
In(2011, August) Applied Physics Letters Vol. 99 (6) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Li, B. K., Wang, M. J., Chen, K. J., Wang, J. N. (2010) Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface. physica status solidi (c), 7 (7). 1961-1963 doi:10.1002/pssc.200983533
Li, B. K., Wang, M. J., Chen, K. J., Wang, J. N. (2009) Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode. Applied Physics Letters, 95 (23). 232111pp. doi:10.1063/1.3273030
Li, B. K., Ge, W. K., Wang, J. N., Chen, K. J. (2008) Persistent photoconductivity and carrier transport in AlGaN∕GaN heterostructures treated by fluorine plasma. Applied Physics Letters, 92 (8). 82105pp. doi:10.1063/1.2888743
Yuan, L., Wang, M. J., Chen, K. J. (2008) Fluorine plasma ion implantation in AlGaN∕GaN heterostructures: A molecular dynamics simulation study. Applied Physics Letters, 92 (10). 102109pp. doi:10.1063/1.2896646
Li, B. K., Chen, K. J., Lau, K. M., Ge, W. K., Wang, J. N. (2008) Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity. physica status solidi (c), 5 (6). 1892-1894 doi:10.1002/pssc.200778459
Li, B. K., Wang, C., Sou, I. K., Ge, W. K., Wang, J. N. (2007) Anomalous photocurrent observed in an Fe–ZnS:Fe Schottky diode. Applied Physics Letters, 91 (17). 172104pp. doi:10.1063/1.2801707
Yuan, L., Wang, M. J., Chen, K. J. (2008) Molecular dynamics calculation of the fluorine ions’ potential energies in AlGaN/GaN heterostructures. Journal of Applied Physics, 104 (11). 116106pp. doi:10.1063/1.3028208
Wang, M. J., Yuan, L., Cheng, C. C., Beling, C. D., Chen, K. J. (2009) Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy. Applied Physics Letters, 94 (6). 61910pp. doi:10.1063/1.3081019
Cao, Y., Chu, R., Li, R., Chen, M., Williams, A. J. (2016) Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier. Applied Physics Letters, 108 (11). 112101pp. doi:10.1063/1.4943946
Chen, G. L., Chang, F. C., Shen, K. C., Ou, J., Chen, W. H., Lee, M. C., Chen, W. K., Jou, M. J., Huang, C. N. (2002) Thermal stability study of Ni/Ta n-GaN Schottky contacts. Applied Physics Letters, 80 (4). 595-597 doi:10.1063/1.1425455
Huang, Huihui, Fang, Guojia, Li, Songzhan, Long, Hao, Mo, Xiaoming, Wang, Haoning, Li, Yuan, Jiang, Qike, Carroll, David L., Wang, Jianbo, Wang, Mingjun, Zhao, Xingzhong (2011) Ultraviolet/orange bicolor electroluminescence from an n-ZnO/n-GaN isotype heterojunction light emitting diode. Applied Physics Letters, 99 (26). 263502pp. doi:10.1063/1.3672051
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.9 01:36:35
Go to top of page