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Yoshida, S., Li, J., Ikeda, N., Hataya, K. (2005) AlGaN/GaN field effect Schottky barrier diode (FESBD). physica status solidi (c), 2 (7). 2602-2606 doi:10.1002/pssc.200461300

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Reference TypeJournal (article/letter/editorial)
TitleAlGaN/GaN field effect Schottky barrier diode (FESBD)
Journalphysica status solidi (c)
AuthorsYoshida, S.Author
Li, J.Author
Ikeda, N.Author
Hataya, K.Author
Year2005 (May)Volume2
Issue7
PublisherWiley
DOIdoi:10.1002/pssc.200461300Search in ResearchGate
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Mindat Ref. ID5110198Long-form Identifiermindat:1:5:5110198:9
GUID0
Full ReferenceYoshida, S., Li, J., Ikeda, N., Hataya, K. (2005) AlGaN/GaN field effect Schottky barrier diode (FESBD). physica status solidi (c), 2 (7). 2602-2606 doi:10.1002/pssc.200461300
Plain TextYoshida, S., Li, J., Ikeda, N., Hataya, K. (2005) AlGaN/GaN field effect Schottky barrier diode (FESBD). physica status solidi (c), 2 (7). 2602-2606 doi:10.1002/pssc.200461300
In(2005, May) physica status solidi (c) Vol. 2 (7) Wiley

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Li, B. K., Wang, M. J., Chen, K. J., Wang, J. N. (2010) Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface. physica status solidi (c), 7 (7). 1961-1963 doi:10.1002/pssc.200983533
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