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Hagedorn, Sylvia, Richter, Eberhard, Netzel, Carsten, Zeimer, Ute, Weyers, Markus, Tränkle, Günther (2009) HVPE growth of AlxGa1-xN alloy layers. physica status solidi (c), 6. doi:10.1002/pssc.200880866

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Reference TypeJournal (article/letter/editorial)
TitleHVPE growth of AlxGa1-xN alloy layers
Journalphysica status solidi (c)
AuthorsHagedorn, SylviaAuthor
Richter, EberhardAuthor
Netzel, CarstenAuthor
Zeimer, UteAuthor
Weyers, MarkusAuthor
Tränkle, GüntherAuthor
Year2009 (June)Volume6
PublisherWiley
DOIdoi:10.1002/pssc.200880866Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5117203Long-form Identifiermindat:1:5:5117203:9
GUID0
Full ReferenceHagedorn, Sylvia, Richter, Eberhard, Netzel, Carsten, Zeimer, Ute, Weyers, Markus, Tränkle, Günther (2009) HVPE growth of AlxGa1-xN alloy layers. physica status solidi (c), 6. doi:10.1002/pssc.200880866
Plain TextHagedorn, Sylvia, Richter, Eberhard, Netzel, Carsten, Zeimer, Ute, Weyers, Markus, Tränkle, Günther (2009) HVPE growth of AlxGa1-xN alloy layers. physica status solidi (c), 6. doi:10.1002/pssc.200880866
In(2009) physica status solidi (c) Vol. 6. Wiley

See Also

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Hagedorn, Sylvia, Richter, Eberhard, Zeimer, Ute, Weyers, Markus (2013) HVPE growth of thick Al0.45Ga0.55N layers on trench patterned sapphire substrates. physica status solidi (c), 10 (3). 355-358 doi:10.1002/pssc.201200651
Richter, Eberhard, Zeimer, Ute, Brunner, Frank, Hagedorn, Sylvia, Weyers, Markus, Tränkle, Günther (2010) Boule-like growth of GaN by HVPE. physica status solidi (c), 7 (1). 28-31 doi:10.1002/pssc.200982616
Fleischmann, Simon, Mogilatenko, Anna, Hagedorn, Sylvia, Richter, Eberhard, Goran, Daniel, Schäfer, Peter, Zeimer, Ute, Weyers, Markus, Tränkle, Günther (2015) Analysis of HVPE grown AlGaN layers on honeycomb patterned sapphire. Journal of Crystal Growth, 414. 32-37 doi:10.1016/j.jcrysgro.2014.10.010
Hennig, Ch., Richter, E., Zeimer, U., Weyers, M., Tränkle, G. (2006) Bowing of thick GaN layers grown by HVPE using ELOG. physica status solidi (c), 3 (6). 1466-1470 doi:10.1002/pssc.200565402
Richter, E., Gründer, M., Schineller, B., Brunner, F., Zeimer, U., Netzel, C., Weyers, M., Tränkle, G. (2011) GaN boules grown by high rate HVPE. physica status solidi (c), 8 (5). 1450-1454 doi:10.1002/pssc.201000901
Fleischmann, Simon, Richter, Eberhard, Mogilatenko, Anna, Weyers, Markus, Tränkle, Günther (2017) Influence of AlN buffer layer on growth of AlGaN by HVPE. physica status solidi (b), 254 (8). 1600696pp. doi:10.1002/pssb.201600696
Richter, E., Hennig, Ch., Wang, L., Zeimer, U., Weyers, M., Tränkle, G. (2007) Optimization of HVPE growth of freestanding c-plane GaN layers using (100) γ-LiAlO2 substrates. physica status solidi (c), 4 (7). 2277-2280 doi:10.1002/pssc.200674871
Fleischmann, Simon, Richter, Eberhard, Mogilatenko, Anna, Unger, Ralph-Stephan, Prasai, Deepak, Weyers, Markus, Tränkle, Günther (2017) Triangular-shaped sapphire patterning for HVPE grown AlGaN layers. physica status solidi (a), 214 (9). 1600751pp. doi:10.1002/pssa.201600751
Hagedorn, S., Richter, E., Zeimer, U., Prasai, D., John, W., Weyers, M. (2012) HVPE of AlxGa1−xN layers on planar and trench patterned sapphire. Journal of Crystal Growth, 353 (1). 129-133 doi:10.1016/j.jcrysgro.2012.05.028
Richter, E., Hennig, Ch., Kissel, H., Sonia, G., Zeimer, U., Weyers, M. (2005) Growth optimization for thick crack-free GaN layers on sapphire with HVPE. physica status solidi (c), 2 (7). 2099-2103 doi:10.1002/pssc.200461487
Richter, E., Hennig, Ch., Zeimer, U., Wang, L., Weyers, M., Tränkle, G. (2006) N-type doping of HVPE-grown GaN using dichlorosilane. physica status solidi (a), 203 (7). 1658-1662 doi:10.1002/pssa.200565420
 
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