Mauder, C., Rahimzadeh Khoshroo, L., Behmenburg, H., Reuters, B., Bösing, M., Rzheutskii, M. V., Lutsenko, E. V., Yablonskii, G. P., Woitok, J. F., Chou, M. M. C., Heuken, M., Kalisch, H., Jansen, R. H. (2009) Impact of nitridation on structural and optical properties of MOVPE-grown m-plane GaN layers on LiAlO2. physica status solidi (c), 6. doi:10.1002/pssc.200880790

See Also

These are possibly similar items as determined by title/reference text matching only.

	Mauder, C., Wang, K. R., Reuters, B., Behmenburg, H., Khoshroo, L. Rahimzadeh, Wan, Q., Trampert, A., Rzheutskii, M. V., Lutsenko, E. V., Yablonskii, G. P., Woitok, J. F., Heuken, M., Kalisch, H., Jansen, R. H. (2010) Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO2 substrates. physica status solidi (b), 247 (7). 1750-1752 doi:10.1002/pssb.200983521
	Behmenburg, H., Wen, T. C., Dikme, Y., Mauder, C., Khoshroo, L. Rahimzadeh, Chou, M. M. C., Rzheutskii, M. V., Lutsenko, E. V., Yablonskii, G. P., Woitok, J., Kalisch, H., Jansen, R. H., Heuken, M. (2008) m -plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE. physica status solidi (b), 245 (5). 893-895 doi:10.1002/pssb.200778565
	Mauder, C., Reuters, B., Rahimzadeh Khoshroo, L., Rzheutskii, M.V., Lutsenko, E.V., Yablonskii, G.P., Woitok, J.F., Heuken, M., Kalisch, H., Jansen, R.H. (2010) Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates. Journal of Crystal Growth, 312 (11). 1823-1827 doi:10.1016/j.jcrysgro.2010.03.010
	Mauder, C., Khoshroo, L. Rahimzadeh, Rzheutski, M. V., Lutsenko, E. V., Yablonskii, G., Kozlovsky, V. I., Woitok, J., Dikme, Y., Heuken, M., Kalisch, H., Jansen, R. H. (2008) MOVPE growth and investigation of AlInN/AlN multiple quantum wells. physica status solidi (c), 5 (6). 1553-1555 doi:10.1002/pssc.200778474
	Mauder, C., Rahimzadeh Khoshroo, L., Behmenburg, H., Wen, T.C., Dikme, Y., Rzheutskii, M.V., Yablonskii, G.P., Woitok, J., Chou, M.M.C., Heuken, M., Kalisch, H., Jansen, R.H. (2008) Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates. Journal of Crystal Growth, 310 (23). 4976-4978 doi:10.1016/j.jcrysgro.2008.07.053
	Khoshroo, L. Rahimzadeh, Mauder, C., Behmenburg, H., Woitok, J., Zander, W., Gruis, J., Reuters, B., Schubert, J., Vescan, A., Heuken, M., Kalisch, H., Jansen, R. H. (2009) Epitaxy and characterisation of AlInGaN heterostructures for HEMT application. physica status solidi (c), 6. doi:10.1002/pssc.200880944
	Mauder, Christof, Reuters, Benjamin, Behmenburg, Hannes, De Souza, Roger A., Woitok, Joachim F., Chou, Mitch M. C., Heuken, Michael, Kalisch, Holger, Jansen, Rolf H. (2011) Mechanisms of impurity incorporation during MOVPE growth of m-plane GaN layers on LiAlO2. physica status solidi (c), 8 (7). 2050-2052 doi:10.1002/pssc.201001027
	Behmenburg, H., Khoshroo, L. Rahimzadeh, Eickelkamp, M., Mauder, C., Fieger, M., Ketteniss, N., Woitok, J., Wamwangi, D., Wuttig, M., Hernandez, S. Estevez, Schäpers, T., Heuken, M., Vescan, A., Kalisch, H., Jansen, R. H. (2009) Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties. physica status solidi (c), 6. doi:10.1002/pssc.200880922
	Behmenburg, H., Khoshroo, L. Rahimzadeh, Mauder, C., Ketteniss, N., Lee, K. H., Eickelkamp, M., Brast, M., Fahle, D., Woitok, J. F., Vescan, A., Kalisch, H., Heuken, M., Jansen, R. H. (2010) In situ SiN passivation of AlInN/GaN heterostructures by MOVPE. physica status solidi (c), 7 (7). 2104-2106 doi:10.1002/pssc.200983599
	Booker, I., Rahimzadeh Khoshroo, L., Woitok, J. F., Kaganer, V., Mauder, C., Behmenburg, H., Gruis, J., Heuken, M., Kalisch, H., Jansen, R. H. (2010) Dislocation density assessment via X-ray GaN rocking curve scans. physica status solidi (c), 7 (7). 1787-1789 doi:10.1002/pssc.200983615
	Mauder, C., Reuters, B., Wang, K.R., Fahle, D., Trampert, A., Rzheutskii, M.V., Lutsenko, E.V., Yablonskii, G.P., Woitok, J.F., Chou, M.M.C., Heuken, M., Kalisch, H., Jansen, R.H. (2011) Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates. Journal of Crystal Growth, 315 (1). 246-249 doi:10.1016/j.jcrysgro.2010.07.031