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Wu, Jie-Jun, Katagiri, Yusuke, Okuura, Kazuki, Li, Da-Bing, Miyake, Hideto, Hiramatsu, Kazumasa (2009) Effects of initial conditions and growth temperature on the properties of nonpolar a -plane AlN grown by LP-HVPE. physica status solidi (c), 6. doi:10.1002/pssc.200880767

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Reference TypeJournal (article/letter/editorial)
TitleEffects of initial conditions and growth temperature on the properties of nonpolar a -plane AlN grown by LP-HVPE
Journalphysica status solidi (c)
AuthorsWu, Jie-JunAuthor
Katagiri, YusukeAuthor
Okuura, KazukiAuthor
Li, Da-BingAuthor
Miyake, HidetoAuthor
Hiramatsu, KazumasaAuthor
Year2009 (June)Volume6
PublisherWiley
DOIdoi:10.1002/pssc.200880767Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5117048Long-form Identifiermindat:1:5:5117048:4
GUID0
Full ReferenceWu, Jie-Jun, Katagiri, Yusuke, Okuura, Kazuki, Li, Da-Bing, Miyake, Hideto, Hiramatsu, Kazumasa (2009) Effects of initial conditions and growth temperature on the properties of nonpolar a -plane AlN grown by LP-HVPE. physica status solidi (c), 6. doi:10.1002/pssc.200880767
Plain TextWu, Jie-Jun, Katagiri, Yusuke, Okuura, Kazuki, Li, Da-Bing, Miyake, Hideto, Hiramatsu, Kazumasa (2009) Effects of initial conditions and growth temperature on the properties of nonpolar a -plane AlN grown by LP-HVPE. physica status solidi (c), 6. doi:10.1002/pssc.200880767
In(2009) physica status solidi (c) Vol. 6. Wiley

See Also

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Wu, Jie-Jun, Katagiri, Yusuke, Okuura, Kazuki, Li, Da-Bing, Miyake, Hideto, Hiramatsu, Kazumasa (2009) Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE. Journal of Crystal Growth, 311 (14). 3801-3805 doi:10.1016/j.jcrysgro.2009.06.014
Wu, Jie-Jun, Okuura, Kazukeru, Fujita, Kohei, Okumura, Kenta, Miyake, Hideto, Hiramatsu, Kazumasa (2009) Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE. Journal of Crystal Growth, 311 (20). 4473-4477 doi:10.1016/j.jcrysgro.2009.08.009
Fujita, Kohei, Okuura, Kazuteru, Miyake, Hideto, Hiramatsu, Kazumasa, Hirayama, Hideki (2011) HVPE growth of thick AlN on trench-patterned substrate. physica status solidi (c), 8 (5). 1483-1486 doi:10.1002/pssc.201001130
Takagi, Yuta, Miyagawa, Reina, Miyake, Hideto, Hiramatsu, Kazumasa (2011) HVPE growth of c-plane AlN on a-plane sapphire using nitridation layer. physica status solidi (c), 8 (2). 470-472 doi:10.1002/pssc.201000582
Li, Da-Bing, Aoki, Masakazu, Miyake, Hideto, Hiramatsu, Kazumasa (2008) Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer. physica status solidi (c), 5 (6). 1818-1821 doi:10.1002/pssc.200778671
Katagiri, Yusuke, Kishino, Shinya, Okuura, Kazuki, Miyake, Hideto, Hiramatu, Kazumasa (2009) Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template. Journal of Crystal Growth, 311 (10). 2831-2833 doi:10.1016/j.jcrysgro.2009.01.022
Miyagawa, Reina, Miyake, Hideto, Hiramatsu, Kazumasa (2010) a -plane AlN and AlGaN growth on r -plane sapphire by MOVPE. physica status solidi (c), 7 (7). 2107-2110 doi:10.1002/pssc.200983601
Takagi, Yuta, Miyagawa, Reina, Miyake, Hideto, Hiramatsu, Kazumasa (2012) Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE. physica status solidi (c), 9 (3). 576-579 doi:10.1002/pssc.201100797
Li, Da-Bing, Katsuno, Takuya, Aoki, Masakazu, Miyake, Hideto, Hiramatsu, Kazumasa, Shibata, Tomohiko (2007) Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE. physica status solidi (c), 4 (7). 2494-2497 doi:10.1002/pssc.200674852
Okumura, Kenta, Nomura, Takuya, Miyake, Hideto, Hiramatsu, Kazumasa, Eryuu, Osamu (2011) HVPE growth of AlN on trench- patterned 6H-SiC substrates. physica status solidi (c), 8 (2). 467-469 doi:10.1002/pssc.201000584
Miyagawa, Reina, Yang, Shibo, Miyake, Hideto, Hiramatsu, Kazumasa (2012) Effects of carrier gas ratio and growth temperature on MOVPE growth of AlN. physica status solidi (c), 9 (3). 499-502 doi:10.1002/pssc.201100712
 
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