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Köhler, Klaus, Maier, Markus, Kirste, Lutz, Wiegert, Joachim, Menner, Hanspeter (2009) Determination of the surface potential of GaN:Si. physica status solidi (c), 6. doi:10.1002/pssc.200880773

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Reference TypeJournal (article/letter/editorial)
TitleDetermination of the surface potential of GaN:Si
Journalphysica status solidi (c)
AuthorsKöhler, KlausAuthor
Maier, MarkusAuthor
Kirste, LutzAuthor
Wiegert, JoachimAuthor
Menner, HanspeterAuthor
Year2009 (June)Volume6
PublisherWiley
DOIdoi:10.1002/pssc.200880773Search in ResearchGate
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Mindat Ref. ID5117056Long-form Identifiermindat:1:5:5117056:3
GUID0
Full ReferenceKöhler, Klaus, Maier, Markus, Kirste, Lutz, Wiegert, Joachim, Menner, Hanspeter (2009) Determination of the surface potential of GaN:Si. physica status solidi (c), 6. doi:10.1002/pssc.200880773
Plain TextKöhler, Klaus, Maier, Markus, Kirste, Lutz, Wiegert, Joachim, Menner, Hanspeter (2009) Determination of the surface potential of GaN:Si. physica status solidi (c), 6. doi:10.1002/pssc.200880773
In(2009) physica status solidi (c) Vol. 6. Wiley

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Köhler, K., Wiegert, J., Menner, H. P., Maier, M., Kirste, L. (2008) The surface potential of GaN:Si. Journal of Applied Physics, 103 (2). 23706pp. doi:10.1063/1.2831004
Gutt, Richard, Köhler, Klaus, Wiegert, Joachim, Kirste, Lutz, Passow, Thorsten, Wagner, Joachim (2011) Controlling the Mg doping profile in MOVPE-grown GaN/Al0.2Ga0.8N light-emitting diodes. physica status solidi (c), 8 (7). 2072-2074 doi:10.1002/pssc.201001039
Passow, Thorsten, Maier, Markus, Kunzer, Michael, Leancu, Crenguta-Columbina, Liu, Shangjing, Wiegert, Joachim, Schmidt, Ralf, Köhler, Klaus, Wagner, Joachim (2009) Influence of substrate dislocation density and quantum well width on the quantum efficiency of violet-emitting GaInN/GaN light-emitting diodes. physica status solidi (c), 6. doi:10.1002/pssc.200880789
Maier, Markus, Passow, Thorsten, Kunzer, Michael, Pletschen, Wilfried, Liu, Shangjing, Wiegert, Joachim, Schmidt, Ralf, Köhler, Klaus, Wagner, Joachim (2009) Efficiency and non-thermal roll-over of violet emitting GaInN light-emitting diodes grown on substrates with different dislocation densities. physica status solidi (c), 6 (6). 1412-1415 doi:10.1002/pssc.200881511
Kunzer, Michael, Gutt, Richard, Kirste, Lutz, Passow, Thorsten, Forghani, Kamran, Scholz, Ferdinand, Köhler, Klaus, Wagner, Joachim (2011) Improved quantum efficiency of 350 nm LEDs grown on low dislocation density AlGaN buffer layers. physica status solidi (c), 8 (7). 2363-2365 doi:10.1002/pssc.201001052
Maier, Markus, Passow, Thorsten, Kunzer, Michael, Pletschen, Wilfried, Köhler, Klaus, Wagner, Joachim (2010) Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDs. physica status solidi (c), 7 (7). 2148-2150 doi:10.1002/pssc.200983473
Knübel, Andreas, Aidam, Rolf, Cimalla, Volker, Kirste, Lutz, Baeumler, Martina, Leancu, Crenguta-Columbina, Lebedev, Vadim, Wallauer, Jan, Walther, Markus, Wagner, Joachim (2009) Transport characteristics of indium nitride (InN) films grown by plasma assisted molecular beam epitaxy (PAMBE). physica status solidi (c), 6 (6). doi:10.1002/pssc.200990009
Passow, Thorsten, Gutt, Richard, Kunzer, Michael, Kirste, Lutz, Pletschen, Wilfried, Forghani, Kamran, Scholz, Ferdinand, Köhler, Klaus, Wagner, Joachim (2012) Effect of In incorporation into the quantum well active region on the efficiency of AlGaN-based ultraviolet light-emitting diodes. physica status solidi (c), 9 (3). 794-797 doi:10.1002/pssc.201100388
Knübel, Andreas, Aidam, Rolf, Cimalla, Volker, Kirste, Lutz, Baeumler, Martina, Leancu, Crenguta-Columbina, Lebedev, Vadim, Wallauer, Jan, Walther, Markus, Wagner, Joachim (2009) Transport characteristics of indium nitride (InN) films grown by plasma assisted molecular beam epitaxy (PAMBE). physica status solidi (c), 6 (6). 1480-1483 doi:10.1002/pssc.200881516
Maier, M., Köhler, K., Kunzer, M., Wiegert, J., Liu, S., Kaufmann, U., Wagner, J. (2008) Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate. physica status solidi (c), 5 (6). 2133-2135 doi:10.1002/pssc.200778475
Danhof, Julia, Vierheilig, Clemens, Schwarz, Ulrich T., Meyer, Tobias, Peter, Matthias, Hahn, Berthold, Maier, Markus, Wagner, Joachim (2009) Correlation of surface morphology and photoluminescence fluctuation in green light emitting InGaN/GaN quantum wells. physica status solidi (c), 6. doi:10.1002/pssc.200880869
 
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