Knübel, Andreas, Aidam, Rolf, Cimalla, Volker, Kirste, Lutz, Baeumler, Martina, Leancu, Crenguta-Columbina, Lebedev, Vadim, Wallauer, Jan, Walther, Markus, Wagner, Joachim (2009) Transport characteristics of indium nitride (InN) films grown by plasma assisted molecular beam epitaxy (PAMBE). physica status solidi (c), 6 (6). doi:10.1002/pssc.200990009

See Also

These are possibly similar items as determined by title/reference text matching only.

	Knübel, Andreas, Aidam, Rolf, Cimalla, Volker, Kirste, Lutz, Baeumler, Martina, Leancu, Crenguta-Columbina, Lebedev, Vadim, Wallauer, Jan, Walther, Markus, Wagner, Joachim (2009) Transport characteristics of indium nitride (InN) films grown by plasma assisted molecular beam epitaxy (PAMBE). physica status solidi (c), 6 (6). 1480-1483 doi:10.1002/pssc.200881516
	Lebedev, V., Polyakov, V., Knübel, A., Aidam, R., Kirste, L., Cimalla, V., Granzner, R., Schwierz, F., Ambacher, O. (2011) Electron and hole accumulation in InN/InGaN heterostructures. physica status solidi (c), 8 (2). 485-487 doi:10.1002/pssc.201000441
	Passow, Thorsten, Maier, Markus, Kunzer, Michael, Leancu, Crenguta-Columbina, Liu, Shangjing, Wiegert, Joachim, Schmidt, Ralf, Köhler, Klaus, Wagner, Joachim (2009) Influence of substrate dislocation density and quantum well width on the quantum efficiency of violet-emitting GaInN/GaN light-emitting diodes. physica status solidi (c), 6. doi:10.1002/pssc.200880789
	Aidam, R., Kirste, L., Kunzer, M., Müller, S., Waltereit, P. (2008) Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors. physica status solidi (c), 5 (6). 1902-1905 doi:10.1002/pssc.200778411
	Prozheeva, Vera, Tuomisto, Filip, Koblmüller, Gregor, Speck, James S., Knübel, Andreas, Aidam, Rolf (2014) Vacancy defect formation in PA-MBE grown C-doped InN. physica status solidi (c), 11 (3). 530-532 doi:10.1002/pssc.201300507
	Aidam, Rolf, Waltereit, Patrick, Kirste, Lutz, Dammann, Michael, Quay, Rüdiger (2010) Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production. physica status solidi (a), 207 (6). 1450-1454 doi:10.1002/pssa.201026020
	Aidam, Rolf, Diwo, Elke, Godejohann, Birte-Julia, Kirste, Lutz, Quay, Rüdiger, Ambacher, Oliver (2014) Growth model investigation for AlN/Al(Ga)InN interface growth by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications. physica status solidi (a), 211 (12). 2854-2860 doi:10.1002/pssa.201431236
	Köhler, Klaus, Maier, Markus, Kirste, Lutz, Wiegert, Joachim, Menner, Hanspeter (2009) Determination of the surface potential of GaN:Si. physica status solidi (c), 6. doi:10.1002/pssc.200880773
	Yodo, T., Nakamura, T., Kouyama, T., Harada, Y. (2005) Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. physica status solidi (c), 2 (7). 2305-2308 doi:10.1002/pssc.200461306
	Ploch, Simon, Meissner, Christian, Pristovsek, Markus, Kneissl, Michael (2009) Shape of indium nitride quantum dots and nanostructures grown by metal organic vapour phase epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880938
	Reurings, Floris, Tuomisto, Filip, Gallinat, Chad S., Koblmüller, Gregor, Speck, James S. (2009) Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions. physica status solidi (c), 6. doi:10.1002/pssc.200880952