登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Fujikawa, Sachie, Hirayama, Hideki, Takano, Takayoshi, Tsubaki, Kenji (2009) Extremely high efficiency 280 nm-band emission from quaternary InAlGaN quantum wells realized by controlling Si-doped layers. physica status solidi (c), 6. doi:10.1002/pssc.200880955

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleExtremely high efficiency 280 nm-band emission from quaternary InAlGaN quantum wells realized by controlling Si-doped layers
Journalphysica status solidi (c)
AuthorsFujikawa, SachieAuthor
Hirayama, HidekiAuthor
Takano, TakayoshiAuthor
Tsubaki, KenjiAuthor
Year2009 (June)Volume6
PublisherWiley
DOIdoi:10.1002/pssc.200880955Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5117364Long-form Identifiermindat:1:5:5117364:9
GUID0
Full ReferenceFujikawa, Sachie, Hirayama, Hideki, Takano, Takayoshi, Tsubaki, Kenji (2009) Extremely high efficiency 280 nm-band emission from quaternary InAlGaN quantum wells realized by controlling Si-doped layers. physica status solidi (c), 6. doi:10.1002/pssc.200880955
Plain TextFujikawa, Sachie, Hirayama, Hideki, Takano, Takayoshi, Tsubaki, Kenji (2009) Extremely high efficiency 280 nm-band emission from quaternary InAlGaN quantum wells realized by controlling Si-doped layers. physica status solidi (c), 6. doi:10.1002/pssc.200880955
In(2009) physica status solidi (c) Vol. 6. Wiley

See Also

These are possibly similar items as determined by title/reference text matching only.

Fujikawa, Sachie, Takano, Takayoshi, Kondo, Yukihiro, Hirayama, Hideki (2008) 340 nm-band high-power InAlGaN quantum well ultraviolet light-emitting diode using p-type InAlGaN layers. physica status solidi (c), 5 (6). 2280-2282 doi:10.1002/pssc.200778687
Takano, Takayoshi, Hirayama, Hideki, Fujikawa, Sachie, Tsubaki, Kenji (2009) Realization of 270 nm band AlGaN based UV-LEDs on large area AlN templates with high crystalline quality. physica status solidi (c), 6. doi:10.1002/pssc.200880929
Hirayama, Hideki, Norimatsu, Jun, Noguchi, Norimichi, Fujikawa, Sachie, Takano, Takayoshi, Tsubaki, Kenji, Kamata, Norihiko (2009) Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates. physica status solidi (c), 6. doi:10.1002/pssc.200880959
Fujikawa, Sachie, Takano, Takayoshi, Kondo, Yukihiro, Hirayama, Hideki (2008) Realization of 340 nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow. physica status solidi (c), 5 (6). 2260-2262 doi:10.1002/pssc.200778666
Hirayama, Hideki, Fujikawa, Sachie, Noguchi, Norimichi, Norimatsu, Jun, Takano, Takayoshi, Tsubaki, Kenji, Kamata, Norihiko (2009) 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire. physica status solidi (a), 206 (6). 1176-1182 doi:10.1002/pssa.200880961
Hirayama, Hideki, Fujikawa, Sachie, Norimatsu, Jun, Takano, Takayoshi, Tsubaki, Kenji, Kamata, Norihiko (2009) Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs. physica status solidi (c), 6. doi:10.1002/pssc.200880958
Hirayama, Hideki, Fujikawa, Sachie (2008) Quaternary InAlGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by anti-surfactant method. physica status solidi (c), 5 (6). 2312-2315 doi:10.1002/pssc.200778732
Mino, Takuya, Hirayama, Hideki, Takano, Takayoshi, Noguchi, Norimichi, Tsubaki, Kenji (2012) Highly-uniform 260 nm-band AlGaN-based deep-ultraviolet light-emitting diodes developed by 2-inch×3 MOVPE system. physica status solidi (c), 9 (3). 749-752 doi:10.1002/pssc.201100358
Fujikawa, Sachie, Takano, Takayoshi, Kondo, Yukihiro, Hirayama, Hideki (2008) Realization of 340-nm-Band High-Output-Power (>7 mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN. Japanese Journal of Applied Physics, 47 (4) 2941-2944 doi:10.1143/jjap.47.2941
Hirayama, Hideki, Kyono, Takashi, Akita, Katsushi, Nakamura, Takao, Ishibashi, Koji (2005) High-efficiency 350 nm-band quaternary InAlGaN-based UV-LED on GaN/sapphire template. physica status solidi (c), 2 (7). 2899-2902 doi:10.1002/pssc.200461446
Hirayama, Hideki, Yatabe, Tohru, Ohashi, Tomoaki, Kamata, Norihiko (2008) Remarkable enhancement of 254-280 nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire. physica status solidi (c), 5 (6). 2283-2285 doi:10.1002/pssc.200778697
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.8 05:32:11
Go to top of page