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Fujikawa, Sachie, Takano, Takayoshi, Kondo, Yukihiro, Hirayama, Hideki (2008) Realization of 340 nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow. physica status solidi (c), 5 (6). 2260-2262 doi:10.1002/pssc.200778666

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Reference TypeJournal (article/letter/editorial)
TitleRealization of 340 nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow
Journalphysica status solidi (c)
AuthorsFujikawa, SachieAuthor
Takano, TakayoshiAuthor
Kondo, YukihiroAuthor
Hirayama, HidekiAuthor
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778666Search in ResearchGate
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Mindat Ref. ID5116418Long-form Identifiermindat:1:5:5116418:2
GUID0
Full ReferenceFujikawa, Sachie, Takano, Takayoshi, Kondo, Yukihiro, Hirayama, Hideki (2008) Realization of 340 nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow. physica status solidi (c), 5 (6). 2260-2262 doi:10.1002/pssc.200778666
Plain TextFujikawa, Sachie, Takano, Takayoshi, Kondo, Yukihiro, Hirayama, Hideki (2008) Realization of 340 nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow. physica status solidi (c), 5 (6). 2260-2262 doi:10.1002/pssc.200778666
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Fujikawa, Sachie, Takano, Takayoshi, Kondo, Yukihiro, Hirayama, Hideki (2008) 340 nm-band high-power InAlGaN quantum well ultraviolet light-emitting diode using p-type InAlGaN layers. physica status solidi (c), 5 (6). 2280-2282 doi:10.1002/pssc.200778687
Fujikawa, Sachie, Takano, Takayoshi, Kondo, Yukihiro, Hirayama, Hideki (2008) Realization of 340-nm-Band High-Output-Power (>7 mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN. Japanese Journal of Applied Physics, 47 (4) 2941-2944 doi:10.1143/jjap.47.2941
Hirayama, Hideki, Fujikawa, Sachie (2008) Quaternary InAlGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by anti-surfactant method. physica status solidi (c), 5 (6). 2312-2315 doi:10.1002/pssc.200778732
Fujikawa, Sachie, Hirayama, Hideki, Takano, Takayoshi, Tsubaki, Kenji (2009) Extremely high efficiency 280 nm-band emission from quaternary InAlGaN quantum wells realized by controlling Si-doped layers. physica status solidi (c), 6. doi:10.1002/pssc.200880955
Takano, Takayoshi, Hirayama, Hideki, Fujikawa, Sachie, Tsubaki, Kenji (2009) Realization of 270 nm band AlGaN based UV-LEDs on large area AlN templates with high crystalline quality. physica status solidi (c), 6. doi:10.1002/pssc.200880929
Hirayama, Hideki, Norimatsu, Jun, Noguchi, Norimichi, Fujikawa, Sachie, Takano, Takayoshi, Tsubaki, Kenji, Kamata, Norihiko (2009) Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates. physica status solidi (c), 6. doi:10.1002/pssc.200880959
Takano, T., Fujikawa, S., Kondo, Y., Hirayama, H. (2008) Remarkable improvement in output power for an InAlGaN based ultraviolet LED by improving the crystalline quality of AlN/AlGaN templates. physica status solidi (c), 5 (6). 2102-2104 doi:10.1002/pssc.200778455
Mino, Takuya, Hirayama, Hideki, Takano, Takayoshi, Noguchi, Norimichi, Tsubaki, Kenji (2012) Highly-uniform 260 nm-band AlGaN-based deep-ultraviolet light-emitting diodes developed by 2-inch×3 MOVPE system. physica status solidi (c), 9 (3). 749-752 doi:10.1002/pssc.201100358
Hirayama, Hideki, Fujikawa, Sachie, Noguchi, Norimichi, Norimatsu, Jun, Takano, Takayoshi, Tsubaki, Kenji, Kamata, Norihiko (2009) 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire. physica status solidi (a), 206 (6). 1176-1182 doi:10.1002/pssa.200880961
Hirayama, Hideki, Fujikawa, Sachie, Norimatsu, Jun, Takano, Takayoshi, Tsubaki, Kenji, Kamata, Norihiko (2009) Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs. physica status solidi (c), 6. doi:10.1002/pssc.200880958
Hirayama, Hideki, Yatabe, Tohru, Noguchi, Norimichi, Ohashi, Tomoaki, Kamata, Norihiko (2008) 226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire. physica status solidi (c), 5 (9). 2969-2971 doi:10.1002/pssc.200779303
 
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