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Hirayama, Hideki, Yatabe, Tohru, Ohashi, Tomoaki, Kamata, Norihiko (2008) Remarkable enhancement of 254-280 nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire. physica status solidi (c), 5 (6). 2283-2285 doi:10.1002/pssc.200778697

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Reference TypeJournal (article/letter/editorial)
TitleRemarkable enhancement of 254-280 nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire
Journalphysica status solidi (c)
AuthorsHirayama, HidekiAuthor
Yatabe, TohruAuthor
Ohashi, TomoakiAuthor
Kamata, NorihikoAuthor
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778697Search in ResearchGate
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Mindat Ref. ID5116470Long-form Identifiermindat:1:5:5116470:2
GUID0
Full ReferenceHirayama, Hideki, Yatabe, Tohru, Ohashi, Tomoaki, Kamata, Norihiko (2008) Remarkable enhancement of 254-280 nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire. physica status solidi (c), 5 (6). 2283-2285 doi:10.1002/pssc.200778697
Plain TextHirayama, Hideki, Yatabe, Tohru, Ohashi, Tomoaki, Kamata, Norihiko (2008) Remarkable enhancement of 254-280 nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire. physica status solidi (c), 5 (6). 2283-2285 doi:10.1002/pssc.200778697
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Hirayama, Hideki, Yatabe, Tohru, Noguchi, Norimichi, Ohashi, Tomoaki, Kamata, Norihiko (2008) 226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire. physica status solidi (c), 5 (9). 2969-2971 doi:10.1002/pssc.200779303
Norimichi, Noguchi, Hirayama, Hideki, Yatabe, Tohru, Kamata, Norihiko (2009) 222 nm single-peaked deep-UV LED with thin AlGaN quantum well layers. physica status solidi (c), 6. doi:10.1002/pssc.200880923
Noguchi, Norimichi, Ohashi, Tomoaki, Kamata, Norihiko, Hirayama, Hideki (2008) Improvement of surface roughness and reduction of threading dislocation density in AlN/AlGaN templates on sapphire by employing trimethylaluminum pulsed supply growth. physica status solidi (c), 5 (6). 1968-1970 doi:10.1002/pssc.200778551
Hirayama, Hideki, Yatabe, Tohru, Noguchi, Norimichi, Ohashi, Tomoaki, Kamata, Norihiko (2007) 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire. Applied Physics Letters, 91 (7). 71901pp. doi:10.1063/1.2770662
Hirayama, Hideki, Fujikawa, Sachie, Noguchi, Norimichi, Norimatsu, Jun, Takano, Takayoshi, Tsubaki, Kenji, Kamata, Norihiko (2009) 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire. physica status solidi (a), 206 (6). 1176-1182 doi:10.1002/pssa.200880961
Hirayama, Hideki, Norimatsu, Jun, Noguchi, Norimichi, Fujikawa, Sachie, Takano, Takayoshi, Tsubaki, Kenji, Kamata, Norihiko (2009) Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates. physica status solidi (c), 6. doi:10.1002/pssc.200880959
Fujikawa, Sachie, Hirayama, Hideki, Takano, Takayoshi, Tsubaki, Kenji (2009) Extremely high efficiency 280 nm-band emission from quaternary InAlGaN quantum wells realized by controlling Si-doped layers. physica status solidi (c), 6. doi:10.1002/pssc.200880955
Takano, T., Fujikawa, S., Kondo, Y., Hirayama, H. (2008) Remarkable improvement in output power for an InAlGaN based ultraviolet LED by improving the crystalline quality of AlN/AlGaN templates. physica status solidi (c), 5 (6). 2102-2104 doi:10.1002/pssc.200778455
Takano, Takayoshi, Hirayama, Hideki, Fujikawa, Sachie, Tsubaki, Kenji (2009) Realization of 270 nm band AlGaN based UV-LEDs on large area AlN templates with high crystalline quality. physica status solidi (c), 6. doi:10.1002/pssc.200880929
Atsushi Yamaguchi, A. (2008) Valence band engineering for remarkable enhancement of surface emission in AlGaN deep-ultraviolet light emitting diodes. physica status solidi (c), 5 (6). 2364-2366 doi:10.1002/pssc.200778740
Jo, Masafumi, Oshima, Issei, Matsumoto, Takuma, Maeda, Noritoshi, Kamata, Norihiko, Hirayama, Hideki (2017) Structural and electrical properties of semipolar (11‐22) AlGaN grown on m‐plane (1‐100) sapphire substrates. physica status solidi c, 14 (8) doi:10.1002/pssc.201600248
 
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