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Atsushi Yamaguchi, A. (2008) Valence band engineering for remarkable enhancement of surface emission in AlGaN deep-ultraviolet light emitting diodes. physica status solidi (c), 5 (6). 2364-2366 doi:10.1002/pssc.200778740

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Reference TypeJournal (article/letter/editorial)
TitleValence band engineering for remarkable enhancement of surface emission in AlGaN deep-ultraviolet light emitting diodes
Journalphysica status solidi (c)
AuthorsAtsushi Yamaguchi, A.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778740Search in ResearchGate
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Mindat Ref. ID5116533Long-form Identifiermindat:1:5:5116533:0
GUID0
Full ReferenceAtsushi Yamaguchi, A. (2008) Valence band engineering for remarkable enhancement of surface emission in AlGaN deep-ultraviolet light emitting diodes. physica status solidi (c), 5 (6). 2364-2366 doi:10.1002/pssc.200778740
Plain TextAtsushi Yamaguchi, A. (2008) Valence band engineering for remarkable enhancement of surface emission in AlGaN deep-ultraviolet light emitting diodes. physica status solidi (c), 5 (6). 2364-2366 doi:10.1002/pssc.200778740
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Hirayama, Hideki, Yatabe, Tohru, Ohashi, Tomoaki, Kamata, Norihiko (2008) Remarkable enhancement of 254-280 nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire. physica status solidi (c), 5 (6). 2283-2285 doi:10.1002/pssc.200778697
Hirayama, Hideki, Yatabe, Tohru, Noguchi, Norimichi, Ohashi, Tomoaki, Kamata, Norihiko (2008) 226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire. physica status solidi (c), 5 (9). 2969-2971 doi:10.1002/pssc.200779303
Nishida, T. (2004) GaN-free transparent structure for ultraviolet light emitting diodes. physica status solidi (c), 1 (6). 1496-1504 doi:10.1002/pssc.200304091
Lu, Huimin, Yu, Tongjun, Chen, Xinjuan, Wang, Jianping, Zhang, Guoyi (2016) Band engineering for surface emission enhancement in Al-rich AlGaN-based deep-ultraviolet light emitting diodes. Japanese Journal of Applied Physics, 55 (5) 5 doi:10.7567/jjap.55.05fj12
Mino, Takuya, Hirayama, Hideki, Takano, Takayoshi, Noguchi, Norimichi, Tsubaki, Kenji (2012) Highly-uniform 260 nm-band AlGaN-based deep-ultraviolet light-emitting diodes developed by 2-inch×3 MOVPE system. physica status solidi (c), 9 (3). 749-752 doi:10.1002/pssc.201100358
Fujikawa, Sachie, Takano, Takayoshi, Kondo, Yukihiro, Hirayama, Hideki (2008) Realization of 340 nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow. physica status solidi (c), 5 (6). 2260-2262 doi:10.1002/pssc.200778666
Kuo, C. W., Chen, C. M., Feng, H. C., Kuo, C. H. (2008) Reliable nitride-based near-ultraviolet light-emitting diodes with meshed p-GaN. physica status solidi (c), 5 (6). 2080-2082 doi:10.1002/pssc.200778418
Bulashevich, K. A., Karpov, S. Yu. (2008) Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes?. physica status solidi (c), 5 (6). 2066-2069 doi:10.1002/pssc.200778414
Takano, T., Fujikawa, S., Kondo, Y., Hirayama, H. (2008) Remarkable improvement in output power for an InAlGaN based ultraviolet LED by improving the crystalline quality of AlN/AlGaN templates. physica status solidi (c), 5 (6). 2102-2104 doi:10.1002/pssc.200778455
Kim, Su Jin, Kim, Tae Geun (2014) Deep-ultraviolet AlGaN light-emitting diodes with variable quantum well and barrier widths. physica status solidi (a), 211 (3). 656-660 doi:10.1002/pssa.201330258
Yamaguchi, A. Atsushi (2010) Polarization properties in deep-ultraviolet AlGaN quantum wells with various substrate orientations. physica status solidi (b), 247 (7). 1717-1721 doi:10.1002/pssb.200983433
 
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