Hirayama, Hideki, Yatabe, Tohru, Noguchi, Norimichi, Ohashi, Tomoaki, Kamata, Norihiko (2007) 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire. Applied Physics Letters, 91 (7). 71901pp. doi:10.1063/1.2770662
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire | ||
| Journal | Applied Physics Letters | ||
| Authors | Hirayama, Hideki | Author | |
| Yatabe, Tohru | Author | ||
| Noguchi, Norimichi | Author | ||
| Ohashi, Tomoaki | Author | ||
| Kamata, Norihiko | Author | ||
| Year | 2007 (August 13) | Volume | 91 |
| Issue | 7 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.2770662Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8559997 | Long-form Identifier | mindat:1:5:8559997:6 |
| GUID | 0 | ||
| Full Reference | Hirayama, Hideki, Yatabe, Tohru, Noguchi, Norimichi, Ohashi, Tomoaki, Kamata, Norihiko (2007) 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire. Applied Physics Letters, 91 (7). 71901pp. doi:10.1063/1.2770662 | ||
| Plain Text | Hirayama, Hideki, Yatabe, Tohru, Noguchi, Norimichi, Ohashi, Tomoaki, Kamata, Norihiko (2007) 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire. Applied Physics Letters, 91 (7). 71901pp. doi:10.1063/1.2770662 | ||
| In | (2007, August) Applied Physics Letters Vol. 91 (7) AIP Publishing | ||
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