Honda, Yoshio, Hikosaka, Toshiki, Yamaguchi, Masahito, Sawaki, Nobuhiko, Pozina, Galia, Karlsson, Fredrik, Darakchieva, Vanya, Paskov, Plamen, Monemar, Bo (2009) DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate. physica status solidi (c), 6. doi:10.1002/pssc.200880932

See Also

These are possibly similar items as determined by title/reference text matching only.

	Kim, Eunhee, Hikosaka, Toshiki, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko (2008) Time-resolved spectroscopy in an undoped GaN (1-101). physica status solidi (c), 5 (1). 367-369 doi:10.1002/pssc.200776532
	Kim, Eun-Hee, Hikosaka, Toshiki, Narita, Tetsuo, Honda, Yoshio, Sawaki, Nobuhiko (2006) Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate. physica status solidi (c), 3 (6). 1992-1996 doi:10.1002/pssc.200565290
	Hikosaka, T., Koide, N., Honda, Y., Yamaguchi, M., Sawaki, N. (2006) p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE. physica status solidi (c), 3 (6). 1425-1428 doi:10.1002/pssc.200565305
	Kim, Eunhee, Narita, Tetsuo, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko (2007) Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate. physica status solidi (c), 4 (7). 2838-2841 doi:10.1002/pssc.200674899
	Tanikawa, Tomoyuki, Suzuki, Noriyuki, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko (2010) HVPE growth of a -plane GaN on a GaN template (110)Si substrate. physica status solidi (c), 7 (7). 1760-1763 doi:10.1002/pssc.200983563
	Honda, Yoshio, Kato, Satoshi, Yamaguchi, Masahito, Sawaki, Nobuhiko (2007) Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE. physica status solidi (c), 4 (7). 2740-2743 doi:10.1002/pssc.200674902
	Hikosaka, Toshiki, Koide, Norikatsu, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko (2007) Mg doping in (11¯01)GaN grown on a 7° off-axis (001)Si substrate by selective MOVPE. Journal of Crystal Growth, 298. 207-210 doi:10.1016/j.jcrysgro.2006.10.229
	Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Sawaki, Nobuhiko (2012) Strain relaxation in thick ($1{\bar {1}}01$) InGaN grown on GaN/Si substrate. physica status solidi (b), 249 (3). 468-471 doi:10.1002/pssb.201100445
	Ito, Shogo, Nakagita, Taihei, Sawaki, Nobuhiko, Ahn, Hyung Soo, Irie, Masashi, Hikosaka, Toshiki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi (2014) Nature of yellow luminescence band in GaN grown on Si substrate. Japanese Journal of Applied Physics, 53 (11) 11 doi:10.7567/jjap.53.11rc02
	Kim, Eun-Hee, Narita, Tetsuo, Honda, Yoshio, Sawaki, Nobuhiko (2004) Optical spectra of GaN/InGaN/GaN MQW structure grown on a (1–101) GaN facet. physica status solidi (c), 1 (10). 2512-2515 doi:10.1002/pssc.200405039
	Sawaki, Nobuhiko, Hikosaka, Toshiki, Koide, Norikatsu, Tanaka, Shigeyasu, Honda, Yoshio, Yamaguchi, Masahito (2009) Growth and properties of semi-polar GaN on a patterned silicon substrate. Journal of Crystal Growth, 311 (10). 2867-2874 doi:10.1016/j.jcrysgro.2009.01.032