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Honda, Yoshio, Kato, Satoshi, Yamaguchi, Masahito, Sawaki, Nobuhiko (2007) Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE. physica status solidi (c), 4 (7). 2740-2743 doi:10.1002/pssc.200674902

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Reference TypeJournal (article/letter/editorial)
TitleSeries resistance in a GaN/AlGaN/n-Si structure grown by MOVPE
Journalphysica status solidi (c)
AuthorsHonda, YoshioAuthor
Kato, SatoshiAuthor
Yamaguchi, MasahitoAuthor
Sawaki, NobuhikoAuthor
Year2007 (June)Volume4
Issue7
PublisherWiley
DOIdoi:10.1002/pssc.200674902Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5114764Long-form Identifiermindat:1:5:5114764:4
GUID0
Full ReferenceHonda, Yoshio, Kato, Satoshi, Yamaguchi, Masahito, Sawaki, Nobuhiko (2007) Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE. physica status solidi (c), 4 (7). 2740-2743 doi:10.1002/pssc.200674902
Plain TextHonda, Yoshio, Kato, Satoshi, Yamaguchi, Masahito, Sawaki, Nobuhiko (2007) Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE. physica status solidi (c), 4 (7). 2740-2743 doi:10.1002/pssc.200674902
In(2007, June) physica status solidi (c) Vol. 4 (7) Wiley

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Kim, Eunhee, Narita, Tetsuo, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko (2007) Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate. physica status solidi (c), 4 (7). 2838-2841 doi:10.1002/pssc.200674899
Narita, Tetuso, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko (2007) The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE. physica status solidi (c), 4 (7). 2506-2509 doi:10.1002/pssc.200674883
Narita, Tetsuo, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko (2006) The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE. physica status solidi (b), 243 (7). 1665-1668 doi:10.1002/pssb.200565115
Tanikawa, Tomoyuki, Suzuki, Noriyuki, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko (2010) HVPE growth of a -plane GaN on a GaN template (110)Si substrate. physica status solidi (c), 7 (7). 1760-1763 doi:10.1002/pssc.200983563
Han, Xiuxun, Honda, Yoshio, Narita, Tetsuo, Yamaguchi, Masahito, Sawaki, Nobuhiko (2007) Subband structure and transport properties of two-dimensional electron gas in AlxGa1–xN/GaN heterostructures. physica status solidi (c), 4 (7). 2334-2337 doi:10.1002/pssc.200674708
Honda, Yoshio, Hikosaka, Toshiki, Yamaguchi, Masahito, Sawaki, Nobuhiko, Pozina, Galia, Karlsson, Fredrik, Darakchieva, Vanya, Paskov, Plamen, Monemar, Bo (2009) DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate. physica status solidi (c), 6. doi:10.1002/pssc.200880932
Kim, Eunhee, Hikosaka, Toshiki, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko (2008) Time-resolved spectroscopy in an undoped GaN (1-101). physica status solidi (c), 5 (1). 367-369 doi:10.1002/pssc.200776532
Kato, Tomonobu, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko (2002) Fabrication of GaN/AlGaN heterostructures on a (111)Si substrate by selective MOVPE. Journal of Crystal Growth, 237. 1099-1103 doi:10.1016/s0022-0248(01)02098-x
Kim, Eun-Hee, Hikosaka, Toshiki, Narita, Tetsuo, Honda, Yoshio, Sawaki, Nobuhiko (2006) Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate. physica status solidi (c), 3 (6). 1992-1996 doi:10.1002/pssc.200565290
Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Sawaki, Nobuhiko (2012) Strain relaxation in thick ($1{\bar {1}}01$) InGaN grown on GaN/Si substrate. physica status solidi (b), 249 (3). 468-471 doi:10.1002/pssb.201100445
Hikosaka, Toshiki, Koide, Norikatsu, Honda, Yoshio, Yamaguchi, Masahito, Sawaki, Nobuhiko (2007) Mg doping in (11¯01)GaN grown on a 7° off-axis (001)Si substrate by selective MOVPE. Journal of Crystal Growth, 298. 207-210 doi:10.1016/j.jcrysgro.2006.10.229
 
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