Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Sawaki, Nobuhiko (2012) Strain relaxation in thick ($1{\bar {1}}01$) InGaN grown on GaN/Si substrate. physica status solidi (b), 249 (3). 468-471 doi:10.1002/pssb.201100445
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Strain relaxation in thick ($1{\bar {1}}01$) InGaN grown on GaN/Si substrate | ||
| Journal | physica status solidi (b) | ||
| Authors | Tanikawa, Tomoyuki | Author | |
| Honda, Yoshio | Author | ||
| Yamaguchi, Masahito | Author | ||
| Amano, Hiroshi | Author | ||
| Sawaki, Nobuhiko | Author | ||
| Year | 2012 (March) | Volume | 249 |
| Issue | 3 | ||
| Publisher | Wiley | ||
| DOI | doi:10.1002/pssb.201100445Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5034837 | Long-form Identifier | mindat:1:5:5034837:0 |
| GUID | 0 | ||
| Full Reference | Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Sawaki, Nobuhiko (2012) Strain relaxation in thick ($1{\bar {1}}01$) InGaN grown on GaN/Si substrate. physica status solidi (b), 249 (3). 468-471 doi:10.1002/pssb.201100445 | ||
| Plain Text | Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Sawaki, Nobuhiko (2012) Strain relaxation in thick ($1{\bar {1}}01$) InGaN grown on GaN/Si substrate. physica status solidi (b), 249 (3). 468-471 doi:10.1002/pssb.201100445 | ||
| In | (2012, March) physica status solidi (b) Vol. 249 (3) Wiley | ||
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