Claudel, Arnaud, Blanquet, Elisabeth, Chaussende, Didier, Pique, Didier, Pons, Michel (2009) Influence of total pressure and precursors flow rates on the growth of aluminium nitride by high temperature chemical vapor deposition (HTCVD). physica status solidi (c), 6. doi:10.1002/pssc.200880935

See Also

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	Claudel, Arnaud, Chowanek, Yann, Blanquet, Elisabeth, Chaussende, Didier, Boichot, Raphaël, Crisci, Alexandre, Berthomé, G., Mank, Hugues, Luca, Sorana, Pique, Didier, Pons, Michel (2011) Aluminum nitride homoepitaxial growth on polar and non-polar AlN PVT substrates by high temperature CVD (HTCVD). physica status solidi (c), 8 (7). 2019-2021 doi:10.1002/pssc.201000940
	Claudel, Arnaud, Blanquet, Elisabeth, Chaussende, Didier, Pique, D., Pons, Michel (2009) Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD). Materials Science Forum, 615. 987-990 doi:10.4028/www.scientific.net/msf.615-617.987
	Claudel, Arnaud, Blanquet, Elisabeth, Chaussende, Didier, Audier, M., Pique, D., Pons, Michel (2008) Growth of Thick AlN Layers by High Temperature CVD (HTCVD). Materials Science Forum, 600. 1269-1272 doi:10.4028/www.scientific.net/msf.600-603.1269
	Balaji, Manavaimaran, Claudel, Arnaud, Fellmann, Vincent, Gélard, Isabelle, Blanquet, Elisabeth, Boichot, Raphaël, Coindeau, Stéphane, Roussel, Hervé, Pique, Didier, Baskar, Krishnan, Pons, Michel (2012) Significance of initial stages on the epitaxial growth of AlN using high temperature halide chemical vapor deposition. physica status solidi (c), 9 (3). 511-514 doi:10.1002/pssc.201100357
	Claudel, A., Blanquet, E., Chaussende, D., Audier, M., Pique, D., Pons, M. (2009) Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD. Journal of Crystal Growth, 311 (13). 3371-3379 doi:10.1016/j.jcrysgro.2009.03.053
	Coudurier, N., Boichot, R., Fellmann, V., Claudel, A., Blanquet, E., Crisci, A., Coindeau, S., Pique, D., Pons, M. (2013) Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy. physica status solidi (c), 10 (3). 362-365 doi:10.1002/pssc.201200686
	Claudel, A., Blanquet, E., Chaussende, D., Boichot, R., Doisneau, B., Berthomé, G., Crisci, A., Mank, H., Moisson, C., Pique, D., Pons, M. (2011) Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process. Journal of Crystal Growth, 335 (1). 17-24 doi:10.1016/j.jcrysgro.2011.09.018
	Claudel, A., Blanquet, E., Chaussende, D., Boichot, R., Martin, R., Mank, H., Crisci, A., Doisneau, B., Chaudouet, P., Coindeau, S., Pique, D., Pons, M. (2011) Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD. Journal of the Electrochemical Society, 158. doi:10.1149/1.3536477
	Charpentier, Ludovic, Baillet, Francis, Chaussende, Didier, Auvray, Laurent, Pons, Michel, Pernot, Etienne, Madar, Roland (2004) In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth. Materials Science Forum, 457. 139-142 doi:10.4028/www.scientific.net/msf.457-460.139
	Su, Juan, Boichot, Raphaël, Blanquet, Elisabeth, Mercier, Frédéric, Pons, Michel (2019) Chemical vapor deposition of titanium nitride thin films: kinetics and experiments. CrystEngComm, 21. 3974-3981 doi:10.1039/c9ce00488b
	Coudurier, Nicolas, Boichot, Raphaël, Mercier, Fréderic, Reboud, Roman, Lay, Sabine, Blanquet, Elisabeth, Pons, Michel (2013) Growth of Boron Nitride on (0001) AlN Templates by High Temperature-Hydride Vapor Phase Epitaxy (HT-HVPE). Physics Procedia, 46. 102-106 doi:10.1016/j.phpro.2013.07.050