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Wuu, Dong-Sing, Hsieh, Chuang-Yu, Laio, Tzu-Wei, Zheng, Xinhe, Horng, Ray-Hua (2009) Light extraction enhancement of sapphire-free InGaN LEDs using single- and double-side surface roughening techniques. physica status solidi (c), 6. doi:10.1002/pssc.200880873

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Reference TypeJournal (article/letter/editorial)
TitleLight extraction enhancement of sapphire-free InGaN LEDs using single- and double-side surface roughening techniques
Journalphysica status solidi (c)
AuthorsWuu, Dong-SingAuthor
Hsieh, Chuang-YuAuthor
Laio, Tzu-WeiAuthor
Zheng, XinheAuthor
Horng, Ray-HuaAuthor
Year2009 (June)Volume6
PublisherWiley
DOIdoi:10.1002/pssc.200880873Search in ResearchGate
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Mindat Ref. ID5117217Long-form Identifiermindat:1:5:5117217:2
GUID0
Full ReferenceWuu, Dong-Sing, Hsieh, Chuang-Yu, Laio, Tzu-Wei, Zheng, Xinhe, Horng, Ray-Hua (2009) Light extraction enhancement of sapphire-free InGaN LEDs using single- and double-side surface roughening techniques. physica status solidi (c), 6. doi:10.1002/pssc.200880873
Plain TextWuu, Dong-Sing, Hsieh, Chuang-Yu, Laio, Tzu-Wei, Zheng, Xinhe, Horng, Ray-Hua (2009) Light extraction enhancement of sapphire-free InGaN LEDs using single- and double-side surface roughening techniques. physica status solidi (c), 6. doi:10.1002/pssc.200880873
In(2009) physica status solidi (c) Vol. 6. Wiley

See Also

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Horng, Ray-Hua, Zheng, Xinhe, Hsieh, Chuang-Yu, Wuu, Dong-Sing (2008) Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector. Applied Physics Letters, 93 (2). 21125pp. doi:10.1063/1.2961008
Wang, Wei-Kai, Wuu, Don-Sing, Lin, Shu-Hei, Huang, Shih-Yung, Horng, Ray-Hua (2006) InGaN-based light-emitting diodes grown on grooved sapphire substrates. physica status solidi (c), 3 (6). 2141-2144 doi:10.1002/pssc.200565415
Huang, Shih-Yung, Horng, Ray-Hua, Wang, Wei-Kai, Wuu, Don-Sing (2006) Fabrication and characterization of InGaN resonant-cavity light-emitting diodes on silicon substrates. physica status solidi (c), 3 (6). 2137-2140 doi:10.1002/pssc.200565359
Wuu, Dong-Sing, Wu, Hsueh-Wei, Chen, Shih-Ting, Tsai, Tsung-Yen, Zheng, Xinhe, Horng, Ray-Hua (2009) Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates. Journal of Crystal Growth, 311 (10). 3063-3066 doi:10.1016/j.jcrysgro.2009.01.107
Horng, Ray-Hua, Wu, Tzong-Ming, Wuu, Dong-Sing (2008) Improved Light Extraction in AlGaInP-Based LEDs Using a Roughened Window Layer. Journal of the Electrochemical Society, 155. doi:10.1149/1.2957905
Huang, Shih-Yung, Horng, Ray-Hua, Kuo, Hao-Chung, Wuu, Dong-Sing (2007) Fabrication and Characterization of InGaN-Based Green Resonant-Cavity LEDs Using Hydrogen Ion-Implantation Techniques. Journal of the Electrochemical Society, 154. doi:10.1149/1.2778860
Tamboli, Adele C., McGroddy, Kelly C., Hu, Evelyn L. (2009) Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes. physica status solidi (c), 6. doi:10.1002/pssc.200880752
Chen, Ching-Ho, Tseng, Ming-Chun, Chen, Yu-Jie, Wuu, Dong-Sing, Horng, Ray-Hua (2018) Performance Comparisons of Light-Emitting Thyristors with and without Indium Tin Oxide Transparent Conductive Layers. physica status solidi (a), 215 (8). 1700442pp. doi:10.1002/pssa.201700442
Hsu, Shun-Cheng, Wuu, Dong-Sing, Zheng, Xinhe, Horng, Ray-Hua (2009) Electron-Beam and Sputter-Deposited Indium–Tin Oxide Omnidirectional Reflectors for High-Power Wafer-Bonded AlGaInP Light-Emitting Diodes. Journal of the Electrochemical Society, 156. doi:10.1149/1.3079618
Zheng, Xinhe, Horng, Ray-Hua, Wuu, Dong-Sing, Chu, Mu-Tao, Liao, Wen-Yih, Wu, Ming-Hsien, Lin, Ray-Ming, Lu, Yuan-Chieh (2008) High-quality InGaN∕GaN heterojunctions and their photovoltaic effects. Applied Physics Letters, 93 (26). 261108pp. doi:10.1063/1.3056628
Wang, Wei-Kai, Wuu, Dong-Sing, Lin, Shu-Hei, Huang, Shih-Yung, Han, Pin, Horng, Ray-Hua (2006) Characteristics of Flip-Chip InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates. Japanese Journal of Applied Physics, 45 (4) 3430-3432 doi:10.1143/jjap.45.3430
 
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