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Saito, Hiroshi, Nakagawa, Shun-ichiro, Ohishi, Masakazu, Imai, Kazuaki (2009) MBE growth of GaN and AlN using ammonia cluster ion beam - Dependence on cluster energy and growth temperature. physica status solidi (c), 6. doi:10.1002/pssc.200880820

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Reference TypeJournal (article/letter/editorial)
TitleMBE growth of GaN and AlN using ammonia cluster ion beam - Dependence on cluster energy and growth temperature
Journalphysica status solidi (c)
AuthorsSaito, HiroshiAuthor
Nakagawa, Shun-ichiroAuthor
Ohishi, MasakazuAuthor
Imai, KazuakiAuthor
Year2009 (June)Volume6
PublisherWiley
DOIdoi:10.1002/pssc.200880820Search in ResearchGate
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Mindat Ref. ID5117136Long-form Identifiermindat:1:5:5117136:8
GUID0
Full ReferenceSaito, Hiroshi, Nakagawa, Shun-ichiro, Ohishi, Masakazu, Imai, Kazuaki (2009) MBE growth of GaN and AlN using ammonia cluster ion beam - Dependence on cluster energy and growth temperature. physica status solidi (c), 6. doi:10.1002/pssc.200880820
Plain TextSaito, Hiroshi, Nakagawa, Shun-ichiro, Ohishi, Masakazu, Imai, Kazuaki (2009) MBE growth of GaN and AlN using ammonia cluster ion beam - Dependence on cluster energy and growth temperature. physica status solidi (c), 6. doi:10.1002/pssc.200880820
In(2009) physica status solidi (c) Vol. 6. Wiley

See Also

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Saito, H., Taguchi, M., Ohishi, M., Yoneta, M., Imai, K. (2004) Molecular beam epitaxial growth of GaN using ammonia cluster ion beam as a nitrogen source. physica status solidi (c), 1 (10). 2478-2482 doi:10.1002/pssc.200405021
Ichinohe, Yoshihiro, Imai, Kazuaki, Suzuki, Kazuhiko, Saito, Hiroshi (2016) Anomalous elongation of c-axis of AlN on Al2O3 grown by MBE using NH3-cluster ions. Journal of Crystal Growth, 454. 111-113 doi:10.1016/j.jcrysgro.2016.09.007
Ichinohe, Yoshihiro, Imai, Kazuaki, Suzuki, Kazuhiko, Saito, Hiroshi (2016) Anomalous elongation of c-axis of GaN on Al2O3 grown by MBE using NH3-cluster ions. Journal of Crystal Growth, 436. 12-15 doi:10.1016/j.jcrysgro.2015.11.037
Yoneta, Minoru, Satou, Yuichi, Shintani, Motoyuki, Ii, Masakazu, Yoshino, Kenji, Honda, Makoto, Ohishi, Masakazu (2009) Molecular beam epitaxial growth of ZnCrO films by using RF plasma source. physica status solidi (c), 6 (5). 1012-1015 doi:10.1002/pssc.200881199
Kaneko, K., Iizuka, N., Suzuki, N. (2005) Initial growth conditions for MBE-grown GaN using high-temperature AlN buffer layer. physica status solidi (c), 2 (7). 2232-2235 doi:10.1002/pssc.200461441
Mansurov, V. G., Galitsyn, Yu. G., Nikitin, A. Yu., Zhuravlev, K. S., Vennegues, Ph. (2006) Investigation of growth mechanisms of GaN quantum dots on (0001)AlN surface by ammonia MBE. physica status solidi (c), 3 (6). 1548-1551 doi:10.1002/pssc.200565203
Farivar, Rashid, Andersson, Thorvald G. (2010) Initial boron growth on GaN and AlN surfaces by molecular beam epitaxy. physica status solidi (c), 7 (1). 25-27 doi:10.1002/pssc.200982610
Managaki, Nobuto, Iizuka, Norio (2009) Dislocation density in AlN grown on multistacked GaN/AlN quantum dot layers by molecular beam epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880813
Ohishi, Masakazu, Yoneta, Minoru, Takeuchi, Kazuyuki, Kajihara, Yukihiro, Saito, Hiroshi (2004) Photoluminescence of CdSe quantum dots grown on tilted ZnSe/GaAs (100). physica status solidi (c), 1 (4). 763-766 doi:10.1002/pssc.200304151
Higashiwaki, M., Matsui, T. (2005) MBE growth and device characteristics of InAlN/GaN HFETs. physica status solidi (c), 2 (7). 2598-2601 doi:10.1002/pssc.200461389
Kakuda, Masahiro, Makino, Kenzo, Ishida, Takashi, Kuboya, Shigeyuki, Onabe, Kentaro (2012) MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer. physica status solidi (c), 9 (3). 558-561 doi:10.1002/pssc.201100395
 
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