Goh, W. H., Martin, J., Ould-Saad, S., Gautier, S., Sirenko, A. A., Martinez, A., Le Gratiet, L., Ramdane, A., Maloufi, N., Ougazzaden, A. (2009) Selective growth of GaN nanodots and nanostripes on 6H-SiC substrates by metal organic vapor phase epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880770

See Also

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	Baghdadli, T., Hamady, S. Ould Saad, Gautier, S., Moudakir, T., Benyoucef, B., Ougazzaden, A. (2009) Electrical and structural characterizations of BGaN thin films grown by metal-organic vapor-phase epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880896
	Bonanno, P.L., Gautier, S., Sirenko, A.A., Kazimirov, A., Cai, Z.-H., Goh, W.H., Martin, J., Martinez, A., Moudakir, T., Maloufi, N., Assouar, M.B., Ramdane, A., Gratiet, L. Le, Ougazzaden, A. (2010) Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 268 (3). 320-324 doi:10.1016/j.nimb.2009.09.016
	Goh, W.H., Patriarche, G., Bonanno, P.L., Gautier, S., Moudakir, T., Abid, M., Orsal, G., Sirenko, A.A., Cai, Z.-H., Martinez, A., Ramdane, A., Le Gratiet, L., Troadec, D., Soltani, A., Ougazzaden, A. (2011) Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth. Journal of Crystal Growth, 315 (1). 160-163 doi:10.1016/j.jcrysgro.2010.08.053
	Ougazzaden, A., Rogers, D.J., Hosseini Teherani, F., Moudakir, T., Gautier, S., Aggerstam, T., Ould Saad, S., Martin, J., Djebbour, Z., Durand, O., Garry, G., Lusson, A., McGrouther, D., Chapman, J.N. (2008) Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. Journal of Crystal Growth, 310 (5). 944-947 doi:10.1016/j.jcrysgro.2007.11.137
	Ougazzaden, A., Moudakir, T., Aggerstam, T., Orsal, G., Salvestrini, J. P., Gautier, S., Sirenko, A. A. (2008) GaN thin films onz- andx -cut LiNbO3 substrates by MOVPE. physica status solidi (c), 5 (6). 1565-1567 doi:10.1002/pssc.200778490
	Ould Saad Hamady, S., Baghdadli, T., Gautier, S., Bouchaour, M., Martin, J., Ougazzaden, A. (2008) Raman scattering study of BxGa1-xN growth on AlN template substrate. physica status solidi (c), 5 (9). 3051-3053 doi:10.1002/pssc.200779186
	Gautier, S., Sartel, C., Ould-Saad, S., Martin, J., Sirenko, A., Ougazzaden, A. (2007) GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3. Journal of Crystal Growth, 298. 428-432 doi:10.1016/j.jcrysgro.2006.10.064
	Moudakir, T., Orsal, G., Maloufi, N., Sirenko, A. A., Gautier, S., Bouchaour, M., Ould Saad, S., Salvestrini, J. P., Ougazzaden, A. (2008) Structural and morphological studies of GaN thin films grown on different oriented LiNbO3substrates by MOVPE. The European Physical Journal Applied Physics, 43 (3). 295-299 doi:10.1051/epjap:2008144
	Ould Saad Hamady, S., Dupuis, N., Décobert, J., Ougazzaden, A. (2008) Micro-Raman for compositions characterization of selective area growth of AlxGayIn1−x−yAs materials by metal-organic vapor-phase epitaxy. Journal of Crystal Growth, 310 (23). 4741-4746 doi:10.1016/j.jcrysgro.2008.06.080
	Chiu, A. P., Chen, N. C., Chang, P. H., Shih, C. F. (2006) Crack-free AlGaN/GaN Bragg mirrors grown on Si (111) substrates by metalorganic vapor phase epitaxy. physica status solidi (c), 3 (6). 2014-2018 doi:10.1002/pssc.200565471
	Orsal, G., Maloufi, N., Gautier, S., Alnot, M., Sirenko, A.A., Bouchaour, M., Ougazzaden, A. (2008) Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE. Journal of Crystal Growth, 310 (23). 5058-5062 doi:10.1016/j.jcrysgro.2008.08.024