Goh, W.H., Patriarche, G., Bonanno, P.L., Gautier, S., Moudakir, T., Abid, M., Orsal, G., Sirenko, A.A., Cai, Z.-H., Martinez, A., Ramdane, A., Le Gratiet, L., Troadec, D., Soltani, A., Ougazzaden, A. (2011) Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth. Journal of Crystal Growth, 315 (1). 160-163 doi:10.1016/j.jcrysgro.2010.08.053

See Also

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	Gautier, S., Patriarche, G., Moudakir, T., Abid, M., Orsal, G., Pantzas, K., Troadec, D, Soltani, A., Largeau, L., Mauguin, O., Ougazzaden, A. (2011) Deep structural analysis of novel BGaN material layers grown by MOVPE. Journal of Crystal Growth, 315 (1). 288-291 doi:10.1016/j.jcrysgro.2010.08.042
	Bonanno, P.L., Gautier, S., Sirenko, A.A., Kazimirov, A., Cai, Z.-H., Goh, W.H., Martin, J., Martinez, A., Moudakir, T., Maloufi, N., Assouar, M.B., Ramdane, A., Gratiet, L. Le, Ougazzaden, A. (2010) Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 268 (3). 320-324 doi:10.1016/j.nimb.2009.09.016
	Abid, M., Moudakir, T., Djebbour, Z., Orsal, G., Gautier, S., En Naciri, A., Migan-Dubois, A., Ougazzaden, A. (2011) Blue–violet boron-based Distributed Bragg Reflectors for VCSEL application. Journal of Crystal Growth, 315 (1). 283-287 doi:10.1016/j.jcrysgro.2010.09.008
	Gautier, S., Orsal, G., Moudakir, T., Maloufi, N., Jomard, F., Alnot, M., Djebbour, Z., Sirenko, A.A., Abid, M., Pantzas, K., Ferguson, I.T., Voss, P.L., Ougazzaden, A. (2010) Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content. Journal of Crystal Growth, 312 (5). 641-644 doi:10.1016/j.jcrysgro.2009.11.040
	Moudakir, T., Gautier, S., Suresh, S., Abid, M., El Gmili, Y., Patriarche, G., Pantzas, K., Troadec, D., Jacquet, J., Genty, F., Voss, P., Ougazzaden, A. (2013) Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE. Journal of Crystal Growth, 370. 12-15 doi:10.1016/j.jcrysgro.2012.09.061
	Pantzas, K., Patriarche, G., Orsal, G., Gautier, S., Moudakir, T., Abid, M., Gorge, V., Djebbour, Z., Voss, P. L., Ougazzaden, A. (2012) Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials. physica status solidi (a), 209 (1). 25-28 doi:10.1002/pssa.201100154
	Goh, W. H., Martin, J., Ould-Saad, S., Gautier, S., Sirenko, A. A., Martinez, A., Le Gratiet, L., Ramdane, A., Maloufi, N., Ougazzaden, A. (2009) Selective growth of GaN nanodots and nanostripes on 6H-SiC substrates by metal organic vapor phase epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880770
	Gautier, S., Aggerstam, T., Pinos, A., Marcinkevičius, S., Liu, K., Shur, M., O’Malley, S.M., Sirenko, A.A., Djebbour, Z., Migan-Dubois, A., Moudakir, T., Ougazzaden, A. (2008) AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas. Journal of Crystal Growth, 310 (23). 4927-4931 doi:10.1016/j.jcrysgro.2008.08.040
	Orsal, G., Maloufi, N., Gautier, S., Alnot, M., Sirenko, A.A., Bouchaour, M., Ougazzaden, A. (2008) Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE. Journal of Crystal Growth, 310 (23). 5058-5062 doi:10.1016/j.jcrysgro.2008.08.024
	Pantzas, K., El Gmili, Y., Dickerson, J., Gautier, S., Largeau, L., Mauguin, O., Patriarche, G., Suresh, S., Moudakir, T., Bishop, C., Ahaitouf, A., Rivera, T., Tanguy, C., Voss, P.L., Ougazzaden, A. (2013) Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE. Journal of Crystal Growth, 370. 57-62 doi:10.1016/j.jcrysgro.2012.08.041
	Sundaram, S., Puybaret, R., El Gmili, Y., Li, X., Bonanno, P. L., Pantzas, K., Orsal, G., Troadec, D., Cai, Z.-H., Patriarche, G., Voss, P. L., Salvestrini, J. P., Ougazzaden, A. (2014) Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template. Journal of Applied Physics, 116 (16). 163105pp. doi:10.1063/1.4900531