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(2011, January) Journal of Crystal Growth Vol. 315 (1) Elsevier BV

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Reference TypeJournal (issue)
JournalJournal of Crystal Growth
Year2011 (January)Volume315
Issue1
PublisherElsevier BV
Mindat Ref. ID2899282Long-form Identifiermindat:1:5:2899282:4
GUID0
Full Reference(2011, January) Journal of Crystal Growth Vol. 315 (1) Elsevier BV
Plain Text(2011, January) Journal of Crystal Growth Vol. 315 (1) Elsevier BV
In(2011) Journal of Crystal Growth Vol. 315. Elsevier BV

Contains

(2011) Editorial Board. Journal of Crystal Growth, 315 (1). doi:10.1016/s0022-0248(11)00025-x
(2011) Contents. Journal of Crystal Growth, 315 (1). doi:10.1016/s0022-0248(11)00029-7
Wang, Christine, Bhat, Rajaram, Bour, David, Caneau, Catherine, Kuech, Tom (2011) Preface. Journal of Crystal Growth, 315 (1). doi:10.1016/s0022-0248(11)00030-3
Sugiyama, Masakazu, Sugita, Kenichi, Wang, Yunpeng, Nakano, Yoshiaki (2011) In situ curvature monitoring for metal–organic vapor phase epitaxy of strain-balanced stacks of InGaAs/GaAsP multiple quantum wells. Journal of Crystal Growth, 315 (1). 1-4 doi:10.1016/j.jcrysgro.2010.09.070
Hoffmann, V., Knauer, A., Brunner, C., Einfeldt, S., Weyers, M., Tränkle, G., Haberland, K., Zettler, J.-T., Kneissl, M. (2011) Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate. Journal of Crystal Growth, 315 (1). 5-9 doi:10.1016/j.jcrysgro.2010.09.048
Döscher, Henning, Brückner, Sebastian, Dobrich, Anja, Höhn, Christian, Kleinschmidt, Peter, Hannappel, Thomas (2011) Surface preparation of Si(100) by thermal oxide removal in a chemical vapor environment. Journal of Crystal Growth, 315 (1). 10-15 doi:10.1016/j.jcrysgro.2010.07.017
Döscher, Henning, Supplie, Oliver, Brückner, Sebastian, Hannappel, Thomas, Beyer, Andreas, Ohlmann, Jens, Volz, Kerstin (2011) Indirect in situ characterization of Si(100) substrates at the initial stage of III–V heteroepitaxy. Journal of Crystal Growth, 315 (1). 16-21 doi:10.1016/j.jcrysgro.2010.08.017
Barrigon, E., Galiana, B., Rey-Stolle, I. (2011) Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (100). Journal of Crystal Growth, 315 (1). 22-27 doi:10.1016/j.jcrysgro.2010.09.038
Kunert, Bernardette, Liebich, Sven, Beyer, Andreas, Fritz, Rafael, Zinnkann, Steffen, Volz, Kerstin, Stolz, Wolfgang (2011) Correlation between hetero-interface properties and photoluminescence efficiency of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) Si substrate. Journal of Crystal Growth, 315 (1). 28-31 doi:10.1016/j.jcrysgro.2010.07.068
Wang, G., Leys, M.R., Nguyen, N.D., Loo, R., Brammertz, G., Richard, O., Bender, H., Dekoster, J., Meuris, M., Heyns, M.M., Caymax, M. (2011) Growth of high quality InP layers in STI trenches on miscut Si (001) substrates. Journal of Crystal Growth, 315 (1). 32-36 doi:10.1016/j.jcrysgro.2010.07.039
Volz, Kerstin, Beyer, Andreas, Witte, Wiebke, Ohlmann, Jens, Németh, Igor, Kunert, Bernardette, Stolz, Wolfgang (2011) GaP-nucleation on exact Si (001) substrates for III/V device integration. Journal of Crystal Growth, 315 (1). 37-47 doi:10.1016/j.jcrysgro.2010.10.036
Cederberg, J.G., Overberg, M.E. (2011) InP substrate evaluation by MOVPE growth of lattice matched epitaxial layers. Journal of Crystal Growth, 315 (1). 48-52 doi:10.1016/j.jcrysgro.2010.08.040
Onitsuka, R., Sugiyama, M., Nakano, Y. (2011) High material-efficiency MOVPE of GaAs without degradation of photovoltaic performances. Journal of Crystal Growth, 315 (1). 53-56 doi:10.1016/j.jcrysgro.2010.09.069
Maassdorf, A., Hoffmann, M., Weyers, M. (2011) Growth and characterization of heavily selenium doped GaAs using MOVPE. Journal of Crystal Growth, 315 (1). 57-60 doi:10.1016/j.jcrysgro.2010.09.051
Ebert, C., Pulwin, Z., Byrnes, D., Paranjpe, A., Zhang, W. (2011) Tellurium doping of InGaP for tunnel junction applications in triple junction solar cells. Journal of Crystal Growth, 315 (1). 61-63 doi:10.1016/j.jcrysgro.2010.09.050
Sato, Tomonari, Mitsuhara, Manabu, Iga, Ryuzo, Kanazawa, Shigeru, Inoue, Yasuyuki (2011) Influence of Sb surfactant on carrier concentration in heavily Zn-doped InGaAs grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 315 (1). 64-67 doi:10.1016/j.jcrysgro.2010.08.029
Garrod, T.J., Kirch, J., Dudley, P., Kim, S., Mawst, L.J., Kuech, T.F. (2011) Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications. Journal of Crystal Growth, 315 (1). 68-73 doi:10.1016/j.jcrysgro.2010.08.010
Bugge, F., Mogilatenko, A., Zeimer, U., Brox, O., Neumann, W., Erbert, G., Weyers, M. (2011) Characterization and optimization of 2-step MOVPE growth for single-mode DFB or DBR laser diodes. Journal of Crystal Growth, 315 (1). 74-77 doi:10.1016/j.jcrysgro.2010.09.021
Novák, J., Telek, P., Vávra, I., Hasenöhrl, S., Reiffers, M. (2011) MOVPE growth and properties of light emitting diodes with an incorporated InMnAs ferromagnetic layer. Journal of Crystal Growth, 315 (1). 78-81 doi:10.1016/j.jcrysgro.2010.09.039
Gütay, Levent, Larsen, Jes K., Guillot, Jerome, Müller, Mathias, Bertram, Frank, Christen, Jürgen, Siebentritt, Susanne (2011) MOVPE of CuGaSe2 on GaAs in the presence of a CuxSe secondary phase. Journal of Crystal Growth, 315 (1). 82-86 doi:10.1016/j.jcrysgro.2010.09.035
Jha, Smita, Wiedmann, Monika K., Kuech, T.F. (2011) A comparative precursor study of the growth behavior of InSb using metal-organic vapor phase epitaxy. Journal of Crystal Growth, 315 (1). 87-90 doi:10.1016/j.jcrysgro.2010.07.047
Jha, Smita, Wiedmann, Monika K., Kuan, T.S., Song, Xueyan, Babcock, S.E., Kuech, T.F. (2011) Growth behavior and defect reduction in heteroepitaxial InAs and GaSb on GaAs using block copolymer lithography. Journal of Crystal Growth, 315 (1). 91-95 doi:10.1016/j.jcrysgro.2010.07.050
Kirch, J., Kim, T.W., Konen, J., Mawst, L.J., Kuech, T.F., Kuan, T.-S. (2011) Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1−y metamorphic buffer layers on InP substrates. Journal of Crystal Growth, 315 (1). 96-101 doi:10.1016/j.jcrysgro.2010.09.054
Yuan, Jiayue, Wang, Hao, van Veldhoven, René P.J., Nötzel, Richard (2011) InAs quantum dot growth on planar InP (100) by metalorganic vapor-phase epitaxy with a thin GaAs interlayer. Journal of Crystal Growth, 315 (1). 102-105 doi:10.1016/j.jcrysgro.2010.09.047
Koizumi, Atsushi, Imanishi, Hiroshi, Uchida, Kazuo, Nozaki, Shinji (2011) In situ CBrCl3 etching to control size and density of InAs/GaAs quantum dots. Journal of Crystal Growth, 315 (1). 106-109 doi:10.1016/j.jcrysgro.2010.08.061
Hospodková, A., Pangrác, J., Oswald, J., Hazdra, P., Kuldová, K., Vyskočil, J., Hulicius, E. (2011) Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures. Journal of Crystal Growth, 315 (1). 110-113 doi:10.1016/j.jcrysgro.2010.09.041
Rajesh, Mohan, Bordel, Damien, Kawaguchi, Kenichi, Faure, Stephane, Nishioka, Masao, Augendre, Emmanuel, Clavelier, Laurent, Guimard, Denis, Arakawa, Yasuhiko (2011) Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3μm band for silicon photonics. Journal of Crystal Growth, 315 (1). 114-118 doi:10.1016/j.jcrysgro.2010.09.019
Dimastrodonato, V., Mereni, L.O., Young, R.J., Pelucchi, E. (2011) Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots. Journal of Crystal Growth, 315 (1). 119-122 doi:10.1016/j.jcrysgro.2010.09.011
Schulz, W.-M., Eichfelder, M., Roßbach, R., Jetter, M., Michler, P. (2011) InP/AlGaInP quantum dot laser emitting at 638nm. Journal of Crystal Growth, 315 (1). 123-126 doi:10.1016/j.jcrysgro.2010.07.018
Schulz, W.-M., Eichfelder, M., Reischle, M., Kessler, C., Roßbach, R., Jetter, M., Michler, P. (2011) Pulsed single-photon resonant-cavity quantum dot LED. Journal of Crystal Growth, 315 (1). 127-130 doi:10.1016/j.jcrysgro.2010.08.014
Eichfelder, M., Schulz, W.-M., Reischle, M., Wiesner, M., Roßbach, R., Jetter, M., Michler, P. (2011) Growth and characterization of electrically pumped red-emitting VCSEL with embedded InP/AlGaInP quantumdots. Journal of Crystal Growth, 315 (1). 131-133 doi:10.1016/j.jcrysgro.2010.09.073
Hillerich, Karla, Messing, Maria E., Reine Wallenberg, L., Deppert, Knut, Dick, Kimberly A. (2011) Epitaxial InP nanowire growth from Cu seed particles. Journal of Crystal Growth, 315 (1). 134-137 doi:10.1016/j.jcrysgro.2010.08.016
Bolinsson, Jessica, Mergenthaler, Kilian, Samuelson, Lars, Gustafsson, Anders (2011) Diffusion length measurements in axial and radial heterostructured nanowires using cathodoluminescence. Journal of Crystal Growth, 315 (1). 138-142 doi:10.1016/j.jcrysgro.2010.08.054
Regolin, I., Gutsche, C., Lysov, A., Blekker, K., Li, Zi-An, Spasova, M., Prost, W., Tegude, F.-J. (2011) Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor–liquid–solid grown GaAs nanowires. Journal of Crystal Growth, 315 (1). 143-147 doi:10.1016/j.jcrysgro.2010.08.028
Yoshimura, Masatoshi, Tomioka, Katsuhiro, Hiruma, Kenji, Hara, Shinjiro, Motohisa, Junichi, Fukui, Takashi (2011) Lattice-mismatched InGaAs nanowires formed on GaAs(111)B by selective-area MOVPE. Journal of Crystal Growth, 315 (1). 148-151 doi:10.1016/j.jcrysgro.2010.09.004
Longo, M., Wiemer, C., Salicio, O., Fanciulli, M., Lazzarini, L., Rotunno, E. (2011) Au-catalyzed self assembly of GeTe nanowires by MOCVD. Journal of Crystal Growth, 315 (1). 152-156 doi:10.1016/j.jcrysgro.2010.09.065
Lohn, Andrew J., Li, Xuema, Kobayashi, Nobuhiko P. (2011) Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layer. Journal of Crystal Growth, 315 (1). 157-159 doi:10.1016/j.jcrysgro.2010.08.050
Goh, W.H., Patriarche, G., Bonanno, P.L., Gautier, S., Moudakir, T., Abid, M., Orsal, G., Sirenko, A.A., Cai, Z.-H., Martinez, A., Ramdane, A., Le Gratiet, L., Troadec, D., Soltani, A., Ougazzaden, A. (2011) Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth. Journal of Crystal Growth, 315 (1). 160-163 doi:10.1016/j.jcrysgro.2010.08.053
Bergbauer, W., Strassburg, M., Kölper, Ch., Linder, N., Roder, C., Lähnemann, J., Trampert, A., Fündling, S., Li, S.F., Wehmann, H.-H., Waag, A (2011) N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties. Journal of Crystal Growth, 315 (1). 164-167 doi:10.1016/j.jcrysgro.2010.07.067
Caban, Piotr, Strupinski, Wlodek, Szmidt, Jan, Wojcik, Marek, Gaca, Jaroslaw, Kelekci, Ozgur, Caliskan, Deniz, Ozbay, Ekmel (2011) Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC. Journal of Crystal Growth, 315 (1). 168-173 doi:10.1016/j.jcrysgro.2010.09.058
Kang, B.K., Kang, S.M., Song, K.M., Yoon, D.H. (2011) The structural and optical properties of selectively grown a-plane GaN with LT-GaN and HT-AlN buffer layers. Journal of Crystal Growth, 315 (1). 174-177 doi:10.1016/j.jcrysgro.2010.08.013
Song, Keun-Man, Kim, Jong-Min, Lee, Dong-Hun, Kang, Dae-Hun, Park, Won-Kyu, Shin, Chan-Soo, Ko, Chul-Gi, Hwang, Sung-Min, Yoon, Dae-Ho (2011) Reduced anisotropy of a-plane GaN layers grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 315 (1). 178-182 doi:10.1016/j.jcrysgro.2010.09.018
Tao, Y.B., Yu, T.J., Yang, Z.Y., Ling, D., Wang, Y., Chen, Z.Z., Yang, Z.J., Zhang, G.Y. (2011) Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor PhaseEpitaxy. Journal of Crystal Growth, 315 (1). 183-187 doi:10.1016/j.jcrysgro.2010.09.072
Ali, M., Romanov, A.E., Suihkonen, S., Svensk, O., Törmä, P.T., Sopanen, M., Lipsanen, H., Odnoblyudov, M.A., Bougrov, V.E. (2011) Void shape control in GaN re-grown on hexagonally patterned mask-less GaN. Journal of Crystal Growth, 315 (1). 188-191 doi:10.1016/j.jcrysgro.2010.08.055
Hsu, Hsiao-Chiu, Su, Yan-Kuin, Huang, Shyh-Jer, Cheng, Shin-Hao, Cheng, Chiao-Yang (2011) Improvement of a-plane GaN crystalline quality by overgrowth of in situ etched GaN template. Journal of Crystal Growth, 315 (1). 192-195 doi:10.1016/j.jcrysgro.2010.09.027
Ishikawa, Hiroyasu, Shimanaka, Keita (2011) Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates. Journal of Crystal Growth, 315 (1). 196-199 doi:10.1016/j.jcrysgro.2010.09.062
Kueller, V., Knauer, A., Brunner, F., Zeimer, U., Rodriguez, H., Kneissl, M., Weyers, M. (2011) Growth of AlGaN and AlN on patterned AlN/sapphire templates. Journal of Crystal Growth, 315 (1). 200-203 doi:10.1016/j.jcrysgro.2010.06.040
Cheng, Kai, Degroote, S., Leys, M., Medjdoub, F., Derluyn, J., Sijmus, B., Germain, M., Borghs, G. (2011) AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation. Journal of Crystal Growth, 315 (1). 204-207 doi:10.1016/j.jcrysgro.2010.09.025
Laskar, Masihhur R., Ganguli, Tapas, Hatui, Nirupam, Rahman, A.A., Gokhale, M.R., Bhattacharya, Arnab (2011) High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers. Journal of Crystal Growth, 315 (1). 208-210 doi:10.1016/j.jcrysgro.2010.09.003
Drechsel, P., Riechert, H. (2011) Strain controlled growth of crack-free GaN with low defect density on silicon (111) substrate. Journal of Crystal Growth, 315 (1). 211-215 doi:10.1016/j.jcrysgro.2010.09.024
Forghani, K., Klein, M., Lipski, F., Schwaiger, S., Hertkorn, J., Leute, R.A.R., Scholz, F., Feneberg, M., Neuschl, B., Thonke, K., Klein, O., Kaiser, U., Gutt, R., Passow, T. (2011) High quality AlGaN epilayers grown on sapphire using SiNx interlayers. Journal of Crystal Growth, 315 (1). 216-219 doi:10.1016/j.jcrysgro.2010.08.044
Mauder, C., Booker, I.D., Fahle, D., Boukiour, H., Behmenburg, H., Rahimzadeh Khoshroo, L., Woitok, J.F., Vescan, A., Heuken, M., Kalisch, H., Jansen, R.H. (2011) On the anisotropic wafer curvature of GaN-based heterostructures on Si(110) substrates grown by MOVPE. Journal of Crystal Growth, 315 (1). 220-223 doi:10.1016/j.jcrysgro.2010.08.049
Dauelsberg, M., Brien, D., Püsche, R., Schön, O., Yakovlev, E.V., Segal, A.S., Talalaev, R.A. (2011) Investigation of nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach. Journal of Crystal Growth, 315 (1). 224-228 doi:10.1016/j.jcrysgro.2010.07.064
Stellmach, J., Pristovsek, M., Savaş, Ö., Schlegel, J., Yakovlev, E.V., Kneissl, M. (2011) High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor. Journal of Crystal Growth, 315 (1). 229-232 doi:10.1016/j.jcrysgro.2010.06.036
Laskar, Masihhur R., Ganguli, Tapas, Kadir, Abdul, Hatui, Nirupam, Rahman, A.A., Shah, A.P., Gokhale, M.R., Bhattacharya, Arnab (2011) Influence of buffer layers on the microstructure of MOVPE grown a-plane InN. Journal of Crystal Growth, 315 (1). 233-237 doi:10.1016/j.jcrysgro.2010.08.019
Deng, Dongmei, Chiu, Ching-Hsueh, Kuo, Hao-Chung, Chen, Peng, May Lau, Kei (2011) Material characteristics of InGaN based light emitting diodes grown on porous Si substrates. Journal of Crystal Growth, 315 (1). 238-241 doi:10.1016/j.jcrysgro.2010.09.031
Wang, C.H., Ke, C.C., Chiu, C.H., Li, J.C., Kuo, H.C., Lu, T.C., Wang, S.C. (2011) Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method. Journal of Crystal Growth, 315 (1). 242-245 doi:10.1016/j.jcrysgro.2010.09.046
Mauder, C., Reuters, B., Wang, K.R., Fahle, D., Trampert, A., Rzheutskii, M.V., Lutsenko, E.V., Yablonskii, G.P., Woitok, J.F., Chou, M.M.C., Heuken, M., Kalisch, H., Jansen, R.H. (2011) Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates. Journal of Crystal Growth, 315 (1). 246-249 doi:10.1016/j.jcrysgro.2010.07.031
Rossow, U., Jönen, H., Brendel, M., Dräger, A., Langer, T., Hoffmann, L., Bremers, H., Hangleiter, A. (2011) Growth of the active zone in nitride based long wavelength laser structures. Journal of Crystal Growth, 315 (1). 250-253 doi:10.1016/j.jcrysgro.2010.09.017
Jetter, M., Wächter, C., Meyer, A., Feneberg, M., Thonke, K., Michler, P. (2011) Quaternary AlxInyGa1−x−yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission. Journal of Crystal Growth, 315 (1). 254-257 doi:10.1016/j.jcrysgro.2010.10.011
Ueno, Masaki, Yoshizumi, Yusuke, Enya, Yohei, Kyono, Takashi, Adachi, Masahiro, Takagi, Shinpei, Tokuyama, Shinji, Sumitomo, Takamichi, Sumiyoshi, Kazuhide, Saga, Nobuhiro, Ikegami, Takatoshi, Katayama, Koji, Nakamura, Takao (2011) InGaN-based true green laser diodes on novel semi-polar GaN substrates. Journal of Crystal Growth, 315 (1). 258-262 doi:10.1016/j.jcrysgro.2010.07.016
Lee, JaeWon, Tak, Youngjo, Kim, Jun-Youn, Hong, Hyun-Gi, Chae, Suhee, Min, Bokki, Jeong, Hyungsu, Yoo, Jinwoo, Kim, Jong-Ryeol, Park, Youngsoo (2011) Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%. Journal of Crystal Growth, 315 (1). 263-266 doi:10.1016/j.jcrysgro.2010.08.006
Lundin, W.V., Nikolaev, A.E., Sakharov, A.V., Zavarin, E.E., Valkovskiy, G.A., Yagovkina, M.A., Usov, S.O., Kryzhanovskaya, N.V., Sizov, V.S., Brunkov, P.N., Zakgeim, A.L., Cherniakov, A.E., Cherkashin, N.A., Hytch, M.J., Yakovlev, E.V., Bazarevskiy, D.S., Rozhavskaya, M.M., Tsatsulnikov, A.F. (2011) Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice. Journal of Crystal Growth, 315 (1). 267-271 doi:10.1016/j.jcrysgro.2010.09.043
Liu, Jianping, Zhang, Yun, Lochner, Zachary, Kim, Seong-Soo, Kim, Hyunsoo, Ryou, Jae-Hyun, Shen, Shyh-Chiang, Doug Yoder, P., Dupuis, Russell D., Wei, Qiyuan Y., Sun, Kewei W., Fischer, Alec M., Ponce, Fernando A. (2011) Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition. Journal of Crystal Growth, 315 (1). 272-277 doi:10.1016/j.jcrysgro.2010.09.071
Lochner, Zachary, Jin Kim, Hee, Choi, Suk, Lee, Yi-Che, Zhang, Yun, Shen, Shyh-Chiang, Ryou, Jae-Hyun, Dupuis, Russell D. (2011) Growth and characterization of NpN heterojunction bipolar transistors with In0.03Ga0.97N and In0.05Ga0.95N bases. Journal of Crystal Growth, 315 (1). 278-282 doi:10.1016/j.jcrysgro.2010.08.034
Abid, M., Moudakir, T., Djebbour, Z., Orsal, G., Gautier, S., En Naciri, A., Migan-Dubois, A., Ougazzaden, A. (2011) Blue–violet boron-based Distributed Bragg Reflectors for VCSEL application. Journal of Crystal Growth, 315 (1). 283-287 doi:10.1016/j.jcrysgro.2010.09.008
Gautier, S., Patriarche, G., Moudakir, T., Abid, M., Orsal, G., Pantzas, K., Troadec, D, Soltani, A., Largeau, L., Mauguin, O., Ougazzaden, A. (2011) Deep structural analysis of novel BGaN material layers grown by MOVPE. Journal of Crystal Growth, 315 (1). 288-291 doi:10.1016/j.jcrysgro.2010.08.042
Kanjolia, R., Jones, A.C., Ashraf, S., Bacsa, J., Black, K., Chalker, P.R., Beahan, P., Hindley, S., Odedra, R., Williams, P.A., Heys, P.N. (2011) Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct. Journal of Crystal Growth, 315 (1). 292-296 doi:10.1016/j.jcrysgro.2010.09.016
Talla, K., Dangbégnon, J.K., Wagener, M.C., Weber, J., Botha, J.R. (2011) Effect of growth parameters on MgxZn1−xO films grown by metalorganic chemical vapour deposition. Journal of Crystal Growth, 315 (1). 297-300 doi:10.1016/j.jcrysgro.2010.08.001
Venkatachalapathy, Vishnukanthan, Galeckas, Augustinas, Sellappan, Raja, Chakarov, Dinko, Kuznetsov, Andrej Yu. (2011) Tuning light absorption by band gap engineering in ZnCdO as a function of MOVPE-synthesis conditions and annealing. Journal of Crystal Growth, 315 (1). 301-304 doi:10.1016/j.jcrysgro.2010.09.056

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To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
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