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Tao, Y.B., Yu, T.J., Yang, Z.Y., Ling, D., Wang, Y., Chen, Z.Z., Yang, Z.J., Zhang, G.Y. (2011) Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor PhaseEpitaxy. Journal of Crystal Growth, 315 (1). 183-187 doi:10.1016/j.jcrysgro.2010.09.072

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Reference TypeJournal (article/letter/editorial)
TitleEvolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor PhaseEpitaxy
JournalJournal of Crystal Growth
AuthorsTao, Y.B.Author
Yu, T.J.Author
Yang, Z.Y.Author
Ling, D.Author
Wang, Y.Author
Chen, Z.Z.Author
Yang, Z.J.Author
Zhang, G.Y.Author
Year2011 (January)Volume315
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2010.09.072Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2899472Long-form Identifiermindat:1:5:2899472:5
GUID0
Full ReferenceTao, Y.B., Yu, T.J., Yang, Z.Y., Ling, D., Wang, Y., Chen, Z.Z., Yang, Z.J., Zhang, G.Y. (2011) Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor PhaseEpitaxy. Journal of Crystal Growth, 315 (1). 183-187 doi:10.1016/j.jcrysgro.2010.09.072
Plain TextTao, Y.B., Yu, T.J., Yang, Z.Y., Ling, D., Wang, Y., Chen, Z.Z., Yang, Z.J., Zhang, G.Y. (2011) Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor PhaseEpitaxy. Journal of Crystal Growth, 315 (1). 183-187 doi:10.1016/j.jcrysgro.2010.09.072
In(2011, January) Journal of Crystal Growth Vol. 315 (1) Elsevier BV

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