Chen, Z.T., Yang, X.L., Yang, Z.J., Zhao, H.B., Wang, C.D., Zhang, G.Y. (2008) Influence of Mn-doping on densities of screw- and edge-type threading dislocations in Ga1−xMnxN grown by metal organic chemical vapor deposition. Journal of Crystal Growth, 310 (10). 2444-2449 doi:10.1016/j.jcrysgro.2008.01.056

See Also

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	Chen, Z.T., Xu, K., Guo, L.P., Yang, Z.J., Su, Y.Y., Yang, X.L., Pan, Y.B., Shen, B., Zhang, H., Zhang, G.Y. (2006) Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition. Journal of Crystal Growth, 294 (2). 156-161 doi:10.1016/j.jcrysgro.2006.05.085
	Chen, Z.T., Su, Y.Y., Yang, Z.J., Zhang, B., Xu, K., Yang, X.L., Pan, Y.B., Zhang, G.Y. (2007) Room temperature ferromagnetism of GaN:Mn thin films grown by low pressure metal-organic chemical vapor deposition by mn periodic delta-doping. Journal of Crystal Growth, 298. 254-256 doi:10.1016/j.jcrysgro.2006.11.034
	Pan, Y.B., Yang, Z.J., Chen, Z.T., Lu, Y., Yu, T.J., Hu, X.D., Xu, K., Zhang, G.Y. (2006) Reduction of threading edge dislocation density in n-type GaN by Si delta-doping. Journal of Crystal Growth, 286 (2). 255-258 doi:10.1016/j.jcrysgro.2005.09.015
	Tao, Y.B., Yu, T.J., Yang, Z.Y., Ling, D., Wang, Y., Chen, Z.Z., Yang, Z.J., Zhang, G.Y. (2011) Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor PhaseEpitaxy. Journal of Crystal Growth, 315 (1). 183-187 doi:10.1016/j.jcrysgro.2010.09.072
	Fang, H., Sang, L.W., Zhu, W.X., Long, H., Yu, T.J., Yang, Z.J., Zhang, G.Y. (2011) Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal–organic chemical vapor deposition. Journal of Crystal Growth, 318 (1). 423-426 doi:10.1016/j.jcrysgro.2010.10.214
	Chen, X.L., Geng, X.H., Xue, J.M., Zhang, D.K., Hou, G.F., Zhao, Y. (2006) Temperature-dependent growth of zinc oxide thin films grown by metal organic chemical vapor deposition. Journal of Crystal Growth, 296 (1). 43-50 doi:10.1016/j.jcrysgro.2006.08.028
	Yang, Fan, Ma, Jin, Feng, Xianjin, Kong, Lingyi (2008) Structural and photoluminescence properties of single-crystalline In2O3 films grown by metal organic vapor deposition. Journal of Crystal Growth, 310 (18). 4054-4057 doi:10.1016/j.jcrysgro.2008.06.075
	Yang, Xuelin, Chen, Zhitao, Wu, Jiejun, Pan, Yaobo, Zhang, Yan, Yang, Zhijian, Yu, Tongjun, Zhang, Guoyi (2007) Magnetic and magneto-transport properties of Ga1−xMnxN grown by MOCVD. Journal of Crystal Growth, 305 (1). 144-148 doi:10.1016/j.jcrysgro.2007.04.029
	Su, X.J., Huang, J., Zhang, J.P., Wang, J.F., Xu, K. (2019) Microstructure and influence of buffer layer on threading dislocations in (0 0 0 1) AlN/sapphire grown by hydride vapor phase epitaxy. Journal of Crystal Growth, 515. 72-77 doi:10.1016/j.jcrysgro.2019.03.012
	Zhao, D.G., Jiang, D.S., Zhu, J.J., Liu, Z.S., Zhang, S.M., Yang, Hui, Jahn, U., Ploog, K.H. (2008) Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition. Journal of Crystal Growth, 310 (24). 5266-5269 doi:10.1016/j.jcrysgro.2008.09.167
	Qin, Z.X., Luo, H.J., Chen, Z.Z., Yu, T.J., Yang, Z.J., Xu, K., Zhang, G.Y. (2007) Effect of AlN interlayer on incorporation efficiency of Al composition in AlGaN grown by MOVPE. Journal of Crystal Growth, 298. 354-356 doi:10.1016/j.jcrysgro.2006.10.036