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Kuzmik, J., Pozzovivo, G., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., Pogany, D., Gornik, E. (2009) Off-state breakdown in InAlN/AlN/GaN high electron mobility transistors. physica status solidi (c), 6. doi:10.1002/pssc.200880754

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Reference TypeJournal (article/letter/editorial)
TitleOff-state breakdown in InAlN/AlN/GaN high electron mobility transistors
Journalphysica status solidi (c)
AuthorsKuzmik, J.Author
Pozzovivo, G.Author
Carlin, J.-F.Author
Gonschorek, M.Author
Feltin, E.Author
Grandjean, N.Author
Strasser, G.Author
Pogany, D.Author
Gornik, E.Author
Year2009 (June)Volume6
PublisherWiley
DOIdoi:10.1002/pssc.200880754Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5117031Long-form Identifiermindat:1:5:5117031:4
GUID0
Full ReferenceKuzmik, J., Pozzovivo, G., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., Pogany, D., Gornik, E. (2009) Off-state breakdown in InAlN/AlN/GaN high electron mobility transistors. physica status solidi (c), 6. doi:10.1002/pssc.200880754
Plain TextKuzmik, J., Pozzovivo, G., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., Pogany, D., Gornik, E. (2009) Off-state breakdown in InAlN/AlN/GaN high electron mobility transistors. physica status solidi (c), 6. doi:10.1002/pssc.200880754
In(2009) physica status solidi (c) Vol. 6. Wiley

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