Gonschorek, M., Carlin, J.-F., Feltin, E., Py, M. A., Grandjean, N. (2006) High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures. Applied Physics Letters, 89 (6). 62106pp. doi:10.1063/1.2335390
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures | ||
| Journal | Applied Physics Letters | ||
| Authors | Gonschorek, M. | Author | |
| Carlin, J.-F. | Author | ||
| Feltin, E. | Author | ||
| Py, M. A. | Author | ||
| Grandjean, N. | Author | ||
| Year | 2006 (August 7) | Volume | 89 |
| Issue | 6 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.2335390Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8552136 | Long-form Identifier | mindat:1:5:8552136:4 |
| GUID | 0 | ||
| Full Reference | Gonschorek, M., Carlin, J.-F., Feltin, E., Py, M. A., Grandjean, N. (2006) High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures. Applied Physics Letters, 89 (6). 62106pp. doi:10.1063/1.2335390 | ||
| Plain Text | Gonschorek, M., Carlin, J.-F., Feltin, E., Py, M. A., Grandjean, N. (2006) High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures. Applied Physics Letters, 89 (6). 62106pp. doi:10.1063/1.2335390 | ||
| In | (2006, August) Applied Physics Letters Vol. 89 (6) AIP Publishing | ||
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