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(2006, March) physica status solidi (c) Vol. 3 (3) Wiley

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Reference TypeJournal (issue)
Journalphysica status solidi (c)
Year2006 (March)Volume3
Issue<   3   >
PublisherWiley
Mindat Ref. ID5111514Long-form Identifiermindat:1:5:5111514:0
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Full Reference(2006, March) physica status solidi (c) Vol. 3 (3) Wiley
Plain Text(2006, March) physica status solidi (c) Vol. 3 (3) Wiley
In(2006) physica status solidi (c) Vol. 3. Wiley

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Hopkins, J.-M., Calvez, S., Kemp, A. J., Hastie, J. E., Smith, S. A., Maclean, A. J., Burns, D., Dawson, M. D. (2006) High-power vertical external-cavity surface-emitting lasers. physica status solidi (c), 3 (3). 365 doi:10.1002/pssc.200690002
(2006) 7th International Conference on Excitonic Processes in Condensed Matter (EXCON 2006), 26–30 June 2006, Wake Forest University, Winston-Salem, NC, USA. physica status solidi (c), 3 (3). 372 doi:10.1002/pssc.200690006
Dimroth, F. (2006) High-efficiency solar cells from III-V compound semiconductors. physica status solidi (c), 3 (3). 373-379 doi:10.1002/pssc.200564172
Hopkins, J.-M., Calvez, S., Kemp, A. J., Hastie, J. E., Smith, S. A., Maclean, A. J., Burns, D., Dawson, M. D. (2006) High-power vertical external-cavity surface-emitting lasers. physica status solidi (c), 3 (3). 380-385 doi:10.1002/pssc.200564182
Schulz, N., Rattunde, M., Manz, C., Köhler, K., Wild, C., Wagner, J., Beyertt, S.-S., Brauch, U., Kübler, T., Giesen, A. (2006) High power continuous wave operation of a GaSb-based VECSEL emitting near 2.3 µm. physica status solidi (c), 3 (3). 386-390 doi:10.1002/pssc.200564178
Laemmlin, M., Fiol, G., Kuntz, M., Hopfer, F., Mutig, A., Ledentsov, N.N., Kovsh, A.R., Schubert, C., Jacob, A., Umbach, A., Bimberg, D. (2006) Quantum dot based photonic devices at 1.3 µm: Direct modulation, mode-locking, SOAs and VCSELs. physica status solidi (c), 3 (3). 391-394 doi:10.1002/pssc.200564142
Pougeoise, E., Gilet, Ph., Dunoyer, N., Grosse, Ph., Poncet, S., Grenouillet, L., Duvaut, Ph., Chelnokov, A., Gérard, J.-M., Hamelin, R., Rossat, C. (2006) Gallium arsenide second-window quantum dot VCSEL. physica status solidi (c), 3 (3). 395-398 doi:10.1002/pssc.200564159
Harris, J. L., Bryce, A. C., Kowalski, O. P., Marsh, J. H. (2006) 1.3 µm single-mode extended cavity GaInNAs lasers produced using a sputtered SiO2 quantum well intermixing technique. physica status solidi (c), 3 (3). 399-402 doi:10.1002/pssc.200564149
Todt, R., Jacke, T., Meyer, R., Adler, J., Laroy, R., Morthier, G., Amann, M.-C. (2006) Sampled grating tunable twin-guide laser diodes with wide tuning range (≥40 nm) and large output power (≥10 mW). physica status solidi (c), 3 (3). 403-406 doi:10.1002/pssc.200564133
Homeyer, E., Piron, R., Caroff, P., Paranthoen, C., Dehaese, O., Corre, A. Le, Loualiche, S. (2006) Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µm. physica status solidi (c), 3 (3). 407-410 doi:10.1002/pssc.200564151
Höfling, S., Indjin, D., Jovanović, V. D., Mirčetić, A., Reithmaier, J. P., Forchel, A., Ikonić, Z., Vukmirović, N., Harrison, P., Milanović, V. (2006) Influence of injector doping density and electron confinement on the properties of GaAs/Al0.45Ga0.55As quantum cascade lasers. physica status solidi (c), 3 (3). 411-414 doi:10.1002/pssc.200564160
Yang, Quankui, Manz, Christian, Bronner, Wolfgang, Köhler, Klaus, Wagner, Joachim (2006) Above room-temperature GaInAs/Al(Ga)AsSb quantum cascade lasers. physica status solidi (c), 3 (3). 415-418 doi:10.1002/pssc.200564173
Ohta, M., Miyamoto, T., Matsuura, T., Matsui, Y., Furuhata, T., Iwasaki, T., Kashihara, Y., Koyama, F. (2006) Low threshold GaInAs quantum well lasers grown under low growth rate by solid-source MBE for 1200 nm wavelength range. physica status solidi (c), 3 (3). 419-422 doi:10.1002/pssc.200564112
Bugge, F., Zeimer, U., Wenzel, H., Staske, R., Sumpf, B., Erbert, G., Weyers, M., Tränkle, G. (2006) Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields. physica status solidi (c), 3 (3). 423-426 doi:10.1002/pssc.200564120
Higgins, S. P., Vickers, A. J. (2006) Modelling chirp as a function of reflectivity in electroabsorption modulated lasers (EML). physica status solidi (c), 3 (3). 427-430 doi:10.1002/pssc.200564161
Kuze, Naohiro, Camargo, Edson G., Ueno, Koichiro, Kawakami, Yoshifumi, Moriyasu, Yoshitaka, Nagase, Kazuhiro, Sato, Masayuki, Endo, Hidetoshi, Ishibashi, Kazutoshi, Ozaki, Masaru (2006) Microchip-sized InSb photodiode infrared sensors operating at room temperature. physica status solidi (c), 3 (3). 431-434 doi:10.1002/pssc.200564154
Rehm, Robert, Schmitz, Johannes, Fleißner, Joachim, Walther, Martin, Ziegler, Johann, Cabanski, Wolfgang, Breiter, Rainer (2006) InAs/GaSb type-II superlattices for single- and dual-color focal plane arrays for the mid-infrared spectral range. physica status solidi (c), 3 (3). 435-438 doi:10.1002/pssc.200564174
Krishna, Sanjay, Forman, Darren, Annamalai, Senthil, Dowd, Philip, Varangis, Petros, Tumolillo, Tom, Gray, Allen, Zilko, John, Sun, Kathy, Liu, Mingguo, Campbell, Joe, Carothers, Daniel (2006) Two-color focal plane arrays based on self assembled quantum dots in a well heterostructure. physica status solidi (c), 3 (3). 439-443 doi:10.1002/pssc.200564162
Fuchs, F., Hoffmann, D., Gin, A., Hood, A., Wei, Y., Razeghi, M. (2006) Negative luminescence of InAs/GaSb superlattice photodiodes. physica status solidi (c), 3 (3). 444-447 doi:10.1002/pssc.200564175
Joseph, Alvin, Dahlstrom, Mattias, Liu, Qizhi, Orner, Bradley, Liu, Xuefeng, Sheridan, David, Rassel, Robert, Dunn, Jim, Ahlgren, David (2006) SiGe HBT BiCMOS technology for millimeter-wave applications. physica status solidi (c), 3 (3). 448-451 doi:10.1002/pssc.200564170
Weimann, Nils G., Houtsma, V., Yang, Y., Frackoviak, J., Tate, A., Chen, J., Weiner, J., Lee, J., Baeyens, Y., Chen, Y. K. (2006) InP double-hetero bipolar transistor technology for 130 GHz clock speed. physica status solidi (c), 3 (3). 452-455 doi:10.1002/pssc.200564169
Driad, R., Lösch, R., Schneider, K., Makon, R. E., Ludwig, M., Weimann, G. (2006) Multi-wafer MBE grown InP-based DHBTs for millimeterwave and digital applications. physica status solidi (c), 3 (3). 456-460 doi:10.1002/pssc.200564102
Liu, H. G., DiSanto, D.W., Watkins, S. P., Bolognesi, C. R. (2006) InP/GaAsSb/InP DHBTs withfT = 300 GHz and high maximum oscillation frequencies: the effect of scaling on device performance. physica status solidi (c), 3 (3). 461-464 doi:10.1002/pssc.200564106
Schlechtweg, M., Tessmann, A., Leuther, A., Schwörer, C., Massler, H., Mikulla, M., Walther, M., Lösch, R. (2006) Advanced millimeter-wave ICs using metamorphic HEMT technology. physica status solidi (c), 3 (3). 465-468 doi:10.1002/pssc.200564166
Shiojima, K., Makimura, T., Maruyama, T., Kosugi, T., Suemitsu, T., Shigekawa, N., Hiroki, M., Yokoyama, H. (2006) Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers. physica status solidi (c), 3 (3). 469-472 doi:10.1002/pssc.200564104
Quay, R., Kiefer, R., van Raay, F., Reiner, R., Kappeler, O., Müller, S., Dammann, M., Bronner, W., Mikulla, M., Schlechtweg, M., Wiegner, D., Seyfried, U., Templ, W., Weimann, G. (2006) GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate. physica status solidi (c), 3 (3). 473-477 doi:10.1002/pssc.200564167
DiSanto, D. W., Bolognesi, C. R. (2006) At bias extraction of parasitic source and drain resistances in AlGaN/GaN HFETs: bias dependence and implications for device modelling and physics. physica status solidi (c), 3 (3). 478-481 doi:10.1002/pssc.200564108
Lossy, Richard, Liero, Armin, Krüger, Olaf, Würfl, Joachim, Tränkle, Günther (2006) Gallium nitride powerbar transistors with via holes fabricated by laser ablation. physica status solidi (c), 3 (3). 482-485 doi:10.1002/pssc.200564156
Wang, Cuimei, Wang, Xiaoliang, Hu, Guoxin, Wang, Junxi, Li, Jianping (2006) Influence of Al content on electrical and structural properties of Si-doped AlxGa1–xN/GaN HEMT structures. physica status solidi (c), 3 (3). 486-489 doi:10.1002/pssc.200564129
Junxue, Ran, Xiaoliang, Wang, Guoxin, Hu, Jianping, Li, Junxi, Wang, Cuimei, Wang, Yiping, Zeng, Jinmin, Li (2006) The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure. physica status solidi (c), 3 (3). 490-493 doi:10.1002/pssc.200564128
Schippel, Christian, Fu, Jun, Schwierz, Frank (2006) The influence of collector dopant profile on breakdown voltage and cutoff frequency of Si-based RF bipolar transistors. physica status solidi (c), 3 (3). 494-498 doi:10.1002/pssc.200564126
Ismail, Naoufel, Malbert, Nathalie, Labat, Nathalie, Touboul, André, Muraro, Jean-Luc (2006) Off-state and on-state breakdown of GaAs MESFET, PHEMT and Power PHEMT. physica status solidi (c), 3 (3). 499-503 doi:10.1002/pssc.200564168
Geller, Martin, Marent, Andreas, Stock, Erik, Vasi'ev, Alexey P., Semenova, Elisaveta S., Zhukov, Alexey E., Ustinov, Victor M., Bimberg, Dieter (2006) Carrier storage and confinement in GaAs-based self-organized quantum dots. physica status solidi (c), 3 (3). 504-507 doi:10.1002/pssc.200564143
Elarde, V. C., Coleman, J. J. (2006) Spectral and threshold performance of patterned quantum dot lasers. physica status solidi (c), 3 (3). 508-511 doi:10.1002/pssc.200564157
Ohmori, M., Torii, K., Sakaki, H. (2006) Anisotropy of the quantum-confined Stark effect in a single InAs quantum dot. physica status solidi (c), 3 (3). 512-515 doi:10.1002/pssc.200564171
Matsuura, T., Miyamoto, T., Ohta, M., Koyama, F. (2006) Photoluminescence characterization of (Ga)InAs quantum dots with GaInAsSb cover layer grown by MBE. physica status solidi (c), 3 (3). 516-519 doi:10.1002/pssc.200564158
Inoue, Jun, Isu, Toshiro, Akahane1, Kouichi, Yamamoto1, Naokatsu, Tsuchiya, Masahiro (2006) Characterization of highly stacked InAs quantum dot layers on InP substrate for a planar saturable absorber at 1.5 µm band. physica status solidi (c), 3 (3). 520-523 doi:10.1002/pssc.200564141
Doré, F., Cornet, C., Schliwa, A., Ballestar, A., Even, J., Bertru, N., Dehaese, O., Alghoraibi, I., Folliot, H., Piron, R., Le Corre, A., Loualiche, S. (2006) InAsSb/InGaAs quantum nanostructures on InP (100) substrate: observation of 2.35 µm photoluminescence. physica status solidi (c), 3 (3). 524-527 doi:10.1002/pssc.200564132
Suzuki, R., Miyamoto, T., Matsuura, T., Koyama, F. (2006) InAs quantum dot formed on GaNAs buffer layer by Metalorganic Chemical Vapor Deposition. physica status solidi (c), 3 (3). 528-531 doi:10.1002/pssc.200564111
Avetisyan, A. A., Djotyan, A. P., Moulopoulos, K. (2006) Coulomb repulsive correlation in A3B5 semiconductor quantum dots in the presence of a magnetic field. physica status solidi (c), 3 (3). 532-535 doi:10.1002/pssc.200564139
Rzaev, Murvetali M., Kazakov, Igor P., Kozlovski, Vladimir I., Skasyrsky, Yan K., Onishchenko, Evgeny E., Schäffler, Friedrich, Hesser, Gunter, Pashaev, Elkhan M., Soubbotin, Ilia A. (2006) Growth, structural and optical studies of CdSe/ZnSe nanostructures grown by MBE on GaAs and Si substrates. physica status solidi (c), 3 (3). 536-539 doi:10.1002/pssc.200564155
Tchelidze, T., Chikoidze, E., Shmavonyan, G., Kereselidze, T. (2006) Excitons in the stacks of ZnSe/CdSe quantum dots. physica status solidi (c), 3 (3). 540-543 doi:10.1002/pssc.200564165
Jeong, I. T., Lee, M. B., Im, J., Hong, S., Park, J., Seong, M. J., Rhee, S. J., Woo, D. H., Woo, J. C. (2006) Hybridization of GaAs, AlAs and (Al, Ga)As with carbon nanotubes by molecular beam epitaxy. physica status solidi (c), 3 (3). 544-547 doi:10.1002/pssc.200564180
Tilak, V., Matocha, K., Sandvik, P. (2006) Novel GaN and SiC based gas sensors. physica status solidi (c), 3 (3). 548-553 doi:10.1002/pssc.200564177
Müller, R., Künecke, U., Weingärtner, R., Maier, M., Wellmann, P. (2006) Anomalous charge carrier transport phenomena in highly aluminum doped SiC. physica status solidi (c), 3 (3). 554-557 doi:10.1002/pssc.200564150
Müller, R., Künecke, U., Thuaire, A., Mermoux, M., Pons, M., Wellmann, P. (2006) Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering. physica status solidi (c), 3 (3). 558-561 doi:10.1002/pssc.200564148
Sakwe, S. A., Müller, R., Masri, P., Wellmann, P. J. (2006) Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals. physica status solidi (c), 3 (3). 562-566 doi:10.1002/pssc.200564152
Sakwe, S. A., Müller, R., Queren, D., Künecke, U., Wellmann, P. J. (2006) Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC. physica status solidi (c), 3 (3). 567-570 doi:10.1002/pssc.200564153
Komatz, M., Matsuishi, K., Hong, S. K., Yao, T. (2006) Homoepitaxial SiC deposition by MBE with Si and monomethlysilane. physica status solidi (c), 3 (3). 571-574 doi:10.1002/pssc.200564136
Birkmann, B., Salcianu, C., Meissner, E., Hussy, S., Friedrich, J., Müller, G. (2006) Characterisation of the electrical properties of solution-grown GaN crystals by reflectivity and Hall measurements. physica status solidi (c), 3 (3). 575-578 doi:10.1002/pssc.200564119
Paszkiewicz, B., Paszkiewicz, R., Szyszka, A., Wosko, M., Macherzynski, W., Tlaczala, M., Kudrawiec, R., Syperek, M., Misiewicz, J., Dumiszewska, E., Strupinski, W. (2006) Study of the activation process of Mg dopant in GaN:Mg layers. physica status solidi (c), 3 (3). 579-584 doi:10.1002/pssc.200564121
Fang, Cebao, Wang, Xiaoliang, Wang, Junxi, Liu, Chao, Wang, Cuimei, Hu, Guoxin, Li, Jianping, Li, Chengji (2006) Deep levels in high resistivity GaN epilayers grown by MOCVD. physica status solidi (c), 3 (3). 585-588 doi:10.1002/pssc.200564122
Aizawa, H., Soejima, K., Hori, A., Satake, A., Fujiwara, K. (2006) Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes. physica status solidi (c), 3 (3). 589-593 doi:10.1002/pssc.200564117
Xiao, Hongling, Wang, Xiaoliang, Wang, Junxi, Zhang, Nanhong, Liu, Hongxin, Zeng, Yiping, Li, Jinmin (2006) Research on the band-gap of InN grown on silicon substrates. physica status solidi (c), 3 (3). 594-597 doi:10.1002/pssc.200564138
Polyakov, V. M., Schwierz, F., Fritsch, D., Schmidt, H. (2006) Monte Carlo study of steady-state and transient transport in wurtzite InN. physica status solidi (c), 3 (3). 598-601 doi:10.1002/pssc.200564146
Paszkiewicz, Bogdan, Szyszka, Adam, Wosko, Mateusz, Macherzynski, Wojciech, Paszkiewicz, Regina, Tlaczala, Marek (2006) Characterisation of AlGaN MSM by Light Beam Induced Current technique. physica status solidi (c), 3 (3). 602-606 doi:10.1002/pssc.200564147
Wang, Xiaoliang, Wang, Cuimei, Hu, Guoxin, Wang, Junxi, Li, Jianping (2006) Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AlN/GaN heterostructures grown on sapphire substrates by MOCVD. physica status solidi (c), 3 (3). 607-610 doi:10.1002/pssc.200564130
Pan, C. J., Pong, B. J., Chou, B. W., Chi, G. C., Tu, C. W. (2006) Photoluminescence of nitrogen-doped ZnO. physica status solidi (c), 3 (3). 611-613 doi:10.1002/pssc.200564163
Kunert, B., Reinhard, S., Koch, J., Lampalzer, M., Volz, K., Stolz, W. (2006) First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system. physica status solidi (c), 3 (3). 614-618 doi:10.1002/pssc.200564124
Güngerich, M., Klar, P. J., Heimbrodt, W., Volz, K., Köhler, K., Wagner, J., Polimeni, A., Capizzi, M., Alt, H. Ch., Gomeniuk, Y. V. (2006) Correlation of band formation and local vibrational mode structure in Ga0.95Al0.05As1–xNx with 0 ≤x ≤ 0.03. physica status solidi (c), 3 (3). 619-622 doi:10.1002/pssc.200564118
Ishikawa, F., Friedland, K.-J., Kostial, H., Ploog, K. H. (2006) Thermally activated electron conductivity in Ga(As,N) with N-induced potential fluctuations. physica status solidi (c), 3 (3). 623-626 doi:10.1002/pssc.200564125
Jahn, U., Miguel-Sánchez, J., Flissikowski, T., Grahn, H. T., Hey, R., Guzmán, A. (2006) Carrier diffusion lengths in (In,Ga)(As,N)/GaAs quantum wells studied by spatially resolved cathodoluminescence. physica status solidi (c), 3 (3). 627-630 doi:10.1002/pssc.200564131
Niu, Zhichuan, Zhang, Shiyong, Ni, Haiqiao, Wu, Donghai, He, Zhenhong, Sun, Zheng, Han, Qin, Wu, Ronghan (2006) 1.3 µm high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy. physica status solidi (c), 3 (3). 631-634 doi:10.1002/pssc.200564103
Ohno, Takeo, Oyama, Yutaka, Nishizawa, Jun-ichi (2006) Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions. physica status solidi (c), 3 (3). 635-638 doi:10.1002/pssc.200564135
Ohno, Takeo, Oyama, Yutaka, Nishizawa, Jun-ichi (2006) Deep levels in GaAs ultrashallow sidewall pin junctions measured by photocapacitance method. physica status solidi (c), 3 (3). 639-642 doi:10.1002/pssc.200564134
Suzuki, K., Kanisawa, K., Perraud, S., Ueki, M., Takashina, K., Hirayama, Y. (2006) Imaging of electron standing waves in InAs/GaSb superlattices by low-temperature scanning tunneling spectroscopy. physica status solidi (c), 3 (3). 643-646 doi:10.1002/pssc.200564137
Hulko, O., Thompson, D.A., Simmons, J. G. (2006) Quantitative compositional analysis of quantum well intermixing using a low temperature MBE-grown InP cap layer. physica status solidi (c), 3 (3). 647-650 doi:10.1002/pssc.200564109
Hey, R., Trampert, A., Santos, P. (2006) (In,Ga)As/GaAs quantum wells on GaAs(110). physica status solidi (c), 3 (3). 651-654 doi:10.1002/pssc.200564140
Krahmer, C., Philippens, M., Schubert, M., Streubel, K. (2006) In-situ monitoring of MOVPE growth with reflectance anisotropy spectroscopy in an industrial used multi wafer reactor. physica status solidi (c), 3 (3). 655-658 doi:10.1002/pssc.200564181
Mizutani, M., Teramae, F., Kobayashi, O., Naritsuka, S., Maruyama, T. (2006) Precise control of growth of DBR by MBE usingin-situ reflectance monitoring system. physica status solidi (c), 3 (3). 659-662 doi:10.1002/pssc.200564113
Yamaguchi, H., Miyashita, S., Hirayama, Y. (2006) Giant magnetopiezoresistance at the localized-extended electronic state transition in a high-mobility 2DEG system. physica status solidi (c), 3 (3). 663-666 doi:10.1002/pssc.200564107
Harada, Y., Kita, T., Wada, O., Marsal, L., Mariette, H., Ando, H. (2006) Valence-band mixing induced bysp-d exchange interaction in CdMnTe quantum wires. physica status solidi (c), 3 (3). 667-670 doi:10.1002/pssc.200564145
Isu, T., Akiyama, K., Tomita, N., Nishimura, T., Nomura, Y., Kanamoto, K. (2006) Optical Kerr gate switching of AlGaAs/AlAs multilayer structures without pattern effects by the two-photon resonant nonlinear response. physica status solidi (c), 3 (3). 671-674 doi:10.1002/pssc.200564114
Kojima, O., Isu, T., Ishi-Hayase, J., Tsuchiya, M. (2006) Spectrally resolved nonlinear optical response of weakly confined excitons under femtosecond laser pulse excitation in GaAs thin films. physica status solidi (c), 3 (3). 675-678 doi:10.1002/pssc.200564115
Chen, C. Y., Din, G. J., Feng, David J., Lin, E. Y., Lay, T.S., Chang, T. Y. (2006) Effect of well width and modulation-doping distributions on spectral characteristics for asymmetric multiple quantum wells. physica status solidi (c), 3 (3). 679-682 doi:10.1002/pssc.200564123
Susaki, Wataru, Ukawa, Soichro, Tanaka, Masashi (2006) Carrier lifetime in compressively strained InGaAs quantum well lasers with InGaAsP barrier/waveguide layers grown on GaAs. physica status solidi (c), 3 (3). 683-687 doi:10.1002/pssc.200564116
Lin, E. Y., Lay, T. S., Chang, T. Y. (2006) Empirical model including band-to-band Coulomb interaction for refractive indices of GaAs and InP-based materials at photon energies near and above the band-gap. physica status solidi (c), 3 (3). 688-692 doi:10.1002/pssc.200564127
Yamashita, K., Yoshimoto, M., Oe, K. (2006) Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication. physica status solidi (c), 3 (3). 693-696 doi:10.1002/pssc.200564110
Kim, Y. S., Choi, H. K., Khim, Z. G., Woo, J. C., Park, Y. D., Chun, S. H. (2006) Temperature dependence of the anomalous Hall effect in ferromagnetic (Ga,Mn)As epilayers. physica status solidi (c), 3 (3). 697-700 doi:10.1002/pssc.200564144
Shintani, K., Yano, Y., Abe, M. (2006) Molecular-dynamics study of SiGe epitaxy on a Si substrate. physica status solidi (c), 3 (3). 701-704 doi:10.1002/pssc.200564105

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To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
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