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Mizutani, M., Teramae, F., Kobayashi, O., Naritsuka, S., Maruyama, T. (2006) Precise control of growth of DBR by MBE usingin-situ reflectance monitoring system. physica status solidi (c), 3 (3). 659-662 doi:10.1002/pssc.200564113

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Reference TypeJournal (article/letter/editorial)
TitlePrecise control of growth of DBR by MBE usingin-situ reflectance monitoring system
Journalphysica status solidi (c)
AuthorsMizutani, M.Author
Teramae, F.Author
Kobayashi, O.Author
Naritsuka, S.Author
Maruyama, T.Author
Year2006 (March)Volume3
Issue3
PublisherWiley
DOIdoi:10.1002/pssc.200564113Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5111537Long-form Identifiermindat:1:5:5111537:1
GUID0
Full ReferenceMizutani, M., Teramae, F., Kobayashi, O., Naritsuka, S., Maruyama, T. (2006) Precise control of growth of DBR by MBE usingin-situ reflectance monitoring system. physica status solidi (c), 3 (3). 659-662 doi:10.1002/pssc.200564113
Plain TextMizutani, M., Teramae, F., Kobayashi, O., Naritsuka, S., Maruyama, T. (2006) Precise control of growth of DBR by MBE usingin-situ reflectance monitoring system. physica status solidi (c), 3 (3). 659-662 doi:10.1002/pssc.200564113
In(2006, March) physica status solidi (c) Vol. 3 (3) Wiley

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Yamamoto, Y., Mori, M., Otsubo, H., Maruyama, T., Naritsuka, S. (2007) GaAs/c-GaN/GaAs multi-layered structure fabricated by using RF-plasma source nitridation technique. physica status solidi (c), 4 (7). 2326-2329 doi:10.1002/pssc.200674926
Shen, X. Q., Ide, T., Shimizu, M. (2012) Epitaxial growth of GaN films on Si(110) substrates by rf-MBE. physica status solidi (c), 9 (3). 503-506 doi:10.1002/pssc.201100304
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