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Matsuura, T., Miyamoto, T., Ohta, M., Koyama, F. (2006) Photoluminescence characterization of (Ga)InAs quantum dots with GaInAsSb cover layer grown by MBE. physica status solidi (c), 3 (3). 516-519 doi:10.1002/pssc.200564158

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence characterization of (Ga)InAs quantum dots with GaInAsSb cover layer grown by MBE
Journalphysica status solidi (c)
AuthorsMatsuura, T.Author
Miyamoto, T.Author
Ohta, M.Author
Koyama, F.Author
Year2006 (March)Volume3
Issue3
PublisherWiley
DOIdoi:10.1002/pssc.200564158Search in ResearchGate
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Mindat Ref. ID5111626Long-form Identifiermindat:1:5:5111626:4
GUID0
Full ReferenceMatsuura, T., Miyamoto, T., Ohta, M., Koyama, F. (2006) Photoluminescence characterization of (Ga)InAs quantum dots with GaInAsSb cover layer grown by MBE. physica status solidi (c), 3 (3). 516-519 doi:10.1002/pssc.200564158
Plain TextMatsuura, T., Miyamoto, T., Ohta, M., Koyama, F. (2006) Photoluminescence characterization of (Ga)InAs quantum dots with GaInAsSb cover layer grown by MBE. physica status solidi (c), 3 (3). 516-519 doi:10.1002/pssc.200564158
In(2006, March) physica status solidi (c) Vol. 3 (3) Wiley

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Suzuki, R., Miyamoto, T., Matsuura, T., Koyama, F. (2006) InAs quantum dot formed on GaNAs buffer layer by Metalorganic Chemical Vapor Deposition. physica status solidi (c), 3 (3). 528-531 doi:10.1002/pssc.200564111
Ohta, M., Miyamoto, T., Matsuura, T., Matsui, Y., Furuhata, T., Iwasaki, T., Kashihara, Y., Koyama, F. (2006) Low threshold GaInAs quantum well lasers grown under low growth rate by solid-source MBE for 1200 nm wavelength range. physica status solidi (c), 3 (3). 419-422 doi:10.1002/pssc.200564112
Sallet, V., Patriarche, G., Mauguin, O., Largeau, L., Travers, L. (2006) InAs(Sb) quantum dots grown on GaAs by MBE. physica status solidi (c), 3 (11). 3997-4000 doi:10.1002/pssc.200671619
Matsuura, Tetsuya, Miyamoto, Tomoyuki, Kageyama, Takeo, Ohta, Masataka, Matsui, Yasutaka, Furuhata, Tatsuya, Koyama, Fumio (2004) Elongation of Emission Wavelength of GaInAsSb-Covered (Ga)InAs Quantum Dots Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 43 (1) doi:10.1143/jjap.43.l82
Zervos, M., Xenogianni, C., Deligeorgis, G., Androulidaki, M., Savvidis, P. G., Hatzopoulos, Z., Pelekanos, N. T. (2006) InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates. physica status solidi (c), 3 (11). 3988-3991 doi:10.1002/pssc.200671616
Matsuura, T., Miyamoto, T., Ohta, M., Matsui, Y., Furuhata, T., Koyama, F. (2005) PL characteristics of InAs quantum dots with Sb irradiation in growth interruption. Journal of Crystal Growth, 278 (1). 51-56 doi:10.1016/j.jcrysgro.2004.12.054
Suzuki, Ryoichiro, Miyamoto, Tomoyuki, Matsuura, Tetsuya, Koyama, Fumio (2006) Photoluminescence Characterization of InAs Quantum Dots on GaNAs Buffer Layer by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 45. doi:10.1143/jjap.45.l585
Bougerol, C., André, R., Robin, I. C., Gilles, B., van Daele, B., van Tendeloo, G. (2006) Morphology of CdSe/ZnSe quantum dots grown by MBE. physica status solidi (c), 3 (4). 938-941 doi:10.1002/pssc.200564747
Limwongse, T., Panyakeow, S., Kanjanachuchai, S. (2009) Evolution of InAs quantum dots grown on cross-hatch substrates. physica status solidi (c), 6 (4). 806-809 doi:10.1002/pssc.200880620
Komatz, M., Matsuishi, K., Hong, S. K., Yao, T. (2006) Homoepitaxial SiC deposition by MBE with Si and monomethlysilane. physica status solidi (c), 3 (3). 571-574 doi:10.1002/pssc.200564136
Hulko, O., Thompson, D.A., Simmons, J. G. (2006) Quantitative compositional analysis of quantum well intermixing using a low temperature MBE-grown InP cap layer. physica status solidi (c), 3 (3). 647-650 doi:10.1002/pssc.200564109
 
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