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Paszkiewicz, Bogdan, Szyszka, Adam, Wosko, Mateusz, Macherzynski, Wojciech, Paszkiewicz, Regina, Tlaczala, Marek (2006) Characterisation of AlGaN MSM by Light Beam Induced Current technique. physica status solidi (c), 3 (3). 602-606 doi:10.1002/pssc.200564147

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Reference TypeJournal (article/letter/editorial)
TitleCharacterisation of AlGaN MSM by Light Beam Induced Current technique
Journalphysica status solidi (c)
AuthorsPaszkiewicz, BogdanAuthor
Szyszka, AdamAuthor
Wosko, MateuszAuthor
Macherzynski, WojciechAuthor
Paszkiewicz, ReginaAuthor
Tlaczala, MarekAuthor
Year2006 (March)Volume3
Issue3
PublisherWiley
DOIdoi:10.1002/pssc.200564147Search in ResearchGate
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Mindat Ref. ID5111604Long-form Identifiermindat:1:5:5111604:2
GUID0
Full ReferencePaszkiewicz, Bogdan, Szyszka, Adam, Wosko, Mateusz, Macherzynski, Wojciech, Paszkiewicz, Regina, Tlaczala, Marek (2006) Characterisation of AlGaN MSM by Light Beam Induced Current technique. physica status solidi (c), 3 (3). 602-606 doi:10.1002/pssc.200564147
Plain TextPaszkiewicz, Bogdan, Szyszka, Adam, Wosko, Mateusz, Macherzynski, Wojciech, Paszkiewicz, Regina, Tlaczala, Marek (2006) Characterisation of AlGaN MSM by Light Beam Induced Current technique. physica status solidi (c), 3 (3). 602-606 doi:10.1002/pssc.200564147
In(2006, March) physica status solidi (c) Vol. 3 (3) Wiley

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Paszkiewicz, B., Paszkiewicz, R., Szyszka, A., Wosko, M., Macherzynski, W., Tlaczala, M., Kudrawiec, R., Syperek, M., Misiewicz, J., Dumiszewska, E., Strupinski, W. (2006) Study of the activation process of Mg dopant in GaN:Mg layers. physica status solidi (c), 3 (3). 579-584 doi:10.1002/pssc.200564121
Wośko, Mateusz, Paszkiewicz, Bogdan, Paszkiewicz, Regina, Tłaczała, Marek (2013) Influence of growth process scheme on the properties of AlGaN/AlN/GaN heterostructures. physica status solidi (c), 10 (3). 306-310 doi:10.1002/pssc.201200708
Macherzyński, Wojciech, Stafiniak, Andrzej, Paszkiewicz, Bogdan, Gryglewicz, Jacek, Paszkiewicz, Regina (2016) Microanalysis of the Ti/Al and Ti/Al/Mo/Au ohmic contacts metallization to AlGaN/GaN heterostructures. physica status solidi (a), 213 (5). 1145-1149 doi:10.1002/pssa.201532684
Szyszka, Adam, Wośko, Mateusz, Paszkiewicz, Regina (2021) Light-assisted scanning probe microscopy characterization of the electrical properties of AlGaN/GaN/Si heterostructures. Applied Surface Science, 538. 148189pp. doi:10.1016/j.apsusc.2020.148189
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Wośko, Mateusz, Paszkiewicz, Bogdan, Paszkiewicz, Regina (2021) AlGaN/GaN Heterostructures Electrical Performance by Altering GaN/Sapphire Buffers Growth Pressure and Low‐Temperature GaN Interlayers Application. Crystal Research and Technology, 56 (12) doi:10.1002/crat.202100090
Kudrawiec, R., Syperek, M., Misiewicz, J., Paszkiewicz, R., Paszkiewicz, B., Tłaczała, M., Strupinski, W. (2004) Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures. physica status solidi (c), 1 (2). 378-381 doi:10.1002/pssc.200303956
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Szyszka, Adam, Wośko, Mateusz, Szymański, Tomasz, Paszkiewicz, Regina (2016) Surface topography analysis with application of roughness area dependence method. Ultramicroscopy, 170. 77-85 doi:10.1016/j.ultramic.2016.07.017
 
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