Paszkiewicz, B., Paszkiewicz, R., Szyszka, A., Wosko, M., Macherzynski, W., Tlaczala, M., Kudrawiec, R., Syperek, M., Misiewicz, J., Dumiszewska, E., Strupinski, W. (2006) Study of the activation process of Mg dopant in GaN:Mg layers. physica status solidi (c), 3 (3). 579-584 doi:10.1002/pssc.200564121

See Also

These are possibly similar items as determined by title/reference text matching only.

	Kudrawiec, R., Syperek, M., Misiewicz, J., Paszkiewicz, R., Paszkiewicz, B., Tłaczała, M., Strupinski, W. (2004) Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures. physica status solidi (c), 1 (2). 378-381 doi:10.1002/pssc.200303956
	Paszkiewicz, Bogdan, Szyszka, Adam, Wosko, Mateusz, Macherzynski, Wojciech, Paszkiewicz, Regina, Tlaczala, Marek (2006) Characterisation of AlGaN MSM by Light Beam Induced Current technique. physica status solidi (c), 3 (3). 602-606 doi:10.1002/pssc.200564147
	Paszkiewicz, Bogdan, Wosko, Mateusz, Paszkiewicz, Regina, Tlaczala, Marek (2013) Nondestructive method for evaluation of electrical parameters of AlGaN/GaN HEMT heterostructures. physica status solidi (c), 10 (3). 490-493 doi:10.1002/pssc.201200709
	Kudrawiec, R., Syperek, M., Motyka, M., Misiewicz, J., Paszkiewicz, R., Paszkiewicz, B., Tłaczała, M. (2006) Contactless electromodulation spectroscopy of AlGaN∕GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance. Journal of Applied Physics, 100 (1). 13501pp. doi:10.1063/1.2206707
	Kudrawiec, R., Syperek, M., Misiewicz, J., Rudziński, M., Grzegorczyk, A. P., Hageman, P. R., Larsen, P. K. (2006) Below bandgap transitions in an AlGaN/GaN transistor heterostructure observed by photoreflectance spectroscopy. physica status solidi (c), 3 (6). 2117-2120 doi:10.1002/pssc.200565330
	Paszkiewicz, R., Paszkiewicz, B., Wosko, M., Szyszka, A., Marciniak, L., Prażmowska, J., Macherzyński, W., Serafińczuk, J., Kozłowski, J., Tlaczala, M., Kováč, J., Novotný, I., Škriniarová, J., Haško, D. (2008) Properties of MOVPE GaN grown on ZnO deposited on Si(001) and Si(111) substrates. Journal of Crystal Growth, 310 (23). 4891-4895 doi:10.1016/j.jcrysgro.2008.08.017
	Gladysiewicz, M., Janicki, L., Kudrawiec, R., Misiewicz, J., Wosko, M., Paszkiewicz, R., Paszkiewicz, B., Tłaczała, M. (2014) Position of fermi level on Al0.2Ga0.8N surface and distribution of electric field in Al0.2Ga0.8N/GaN heterostructures without and with AlN layer. Journal of Applied Physics, 115 (13). 133504pp. doi:10.1063/1.4870442
	Kudrawiec, R, Motyka, M, Misiewicz, J, Paszkiewicz, B, Paszkiewicz, R, Tłaczała, M (2008) Contactless electroreflectance study of band gap renormalization for Mg-doped GaN. Journal of Physics D: Applied Physics, 41. 165109pp. doi:10.1088/0022-3727/41/16/165109
	Boney, C., Hernandez, I., Pillai, R., Starikov, D., Bensaoula, A., Henini, M., Syperek, M., Misiewicz, J., Kudrawiec, R. (2011) Growth and characterization of InGaN for photovoltaic devices. physica status solidi (c), 8 (7). 2460-2462 doi:10.1002/pssc.201000993
	Gladysiewicz, M., Kudrawiec, R., Syperek, M., Misiewicz, J., Siekacz, M., Cywinski, G., Skierbiszewski, C., Suski, T. (2011) Theoretical simulations of radiative recombination time in polar InGaN quantum wells. physica status solidi (c), 8 (7). 2273-2275 doi:10.1002/pssc.201001048
	Motyka, M., Kudrawiec, R., Misiewicz, J., Pucicki, D., Tlaczala, M., Fischer, M., Marquardt, B., Forchel, A. (2007) Contactless electroreflectance and photoluminescence of InAs quantum dots with GaInNAs barriers grown on GaAs substrate. physica status solidi (c), 4 (2). 625-627 doi:10.1002/pssc.200673306