| Reference Type | Journal (article/letter/editorial) |
|---|
| Title | The influence of collector dopant profile on breakdown voltage and cutoff frequency of Si-based RF bipolar transistors |
|---|
| Journal | physica status solidi (c) |
|---|
| Authors | Schippel, Christian | Author |
|---|
| Fu, Jun | Author |
| Schwierz, Frank | Author |
| Year | 2006 (March) | Volume | 3 |
|---|
| Issue | 3 |
|---|
| Publisher | Wiley |
|---|
| DOI | doi:10.1002/pssc.200564126Search in ResearchGate |
|---|
| Generate Citation Formats |
|---|
| Mindat Ref. ID | 5111562 | Long-form Identifier | mindat:1:5:5111562:7 |
|---|
|
| GUID | 0 |
|---|
| Full Reference | Schippel, Christian, Fu, Jun, Schwierz, Frank (2006) The influence of collector dopant profile on breakdown voltage and cutoff frequency of Si-based RF bipolar transistors. physica status solidi (c), 3 (3). 494-498 doi:10.1002/pssc.200564126 |
|---|
| Plain Text | Schippel, Christian, Fu, Jun, Schwierz, Frank (2006) The influence of collector dopant profile on breakdown voltage and cutoff frequency of Si-based RF bipolar transistors. physica status solidi (c), 3 (3). 494-498 doi:10.1002/pssc.200564126 |
|---|
| In | (2006, March) physica status solidi (c) Vol. 3 (3) Wiley |
|---|
These are possibly similar items as determined by title/reference text matching only.
