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Shi, Junxia, Choi, Y. C., Pophristic, M., Spencer, M. G., Eastman, L. F. (2008) High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire. physica status solidi (c), 5 (6). 2013-2015 doi:10.1002/pssc.200778691

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Reference TypeJournal (article/letter/editorial)
TitleHigh breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire
Journalphysica status solidi (c)
AuthorsShi, JunxiaAuthor
Choi, Y. C.Author
Pophristic, M.Author
Spencer, M. G.Author
Eastman, L. F.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778691Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5116460Long-form Identifiermindat:1:5:5116460:5
GUID0
Full ReferenceShi, Junxia, Choi, Y. C., Pophristic, M., Spencer, M. G., Eastman, L. F. (2008) High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire. physica status solidi (c), 5 (6). 2013-2015 doi:10.1002/pssc.200778691
Plain TextShi, Junxia, Choi, Y. C., Pophristic, M., Spencer, M. G., Eastman, L. F. (2008) High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire. physica status solidi (c), 5 (6). 2013-2015 doi:10.1002/pssc.200778691
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Aggerstam, T., Sjödin, M., Lourdudoss, S. (2006) AlGaN/GaN high-electron-mobility transistors on sapphire with Fe-doped GaN buffer layer by MOVPE. physica status solidi (c), 3 (6). 2373-2376 doi:10.1002/pssc.200565152
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