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Okimoto, T., Tsukihara, M., Kataoka, K., Kato, A., Nishino, K., Naoi, Y., Sakai, S. (2008) GaN- and AlGaN-based UV-LEDs on sapphire by metal-organic chemical vapor deposition. physica status solidi (c), 5 (9). 3066-3068 doi:10.1002/pssc.200779205

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Reference TypeJournal (article/letter/editorial)
TitleGaN- and AlGaN-based UV-LEDs on sapphire by metal-organic chemical vapor deposition
Journalphysica status solidi (c)
AuthorsOkimoto, T.Author
Tsukihara, M.Author
Kataoka, K.Author
Kato, A.Author
Nishino, K.Author
Naoi, Y.Author
Sakai, S.Author
Year2008 (July)Volume5
Issue9
PublisherWiley
DOIdoi:10.1002/pssc.200779205Search in ResearchGate
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Mindat Ref. ID5116801Long-form Identifiermindat:1:5:5116801:8
GUID0
Full ReferenceOkimoto, T., Tsukihara, M., Kataoka, K., Kato, A., Nishino, K., Naoi, Y., Sakai, S. (2008) GaN- and AlGaN-based UV-LEDs on sapphire by metal-organic chemical vapor deposition. physica status solidi (c), 5 (9). 3066-3068 doi:10.1002/pssc.200779205
Plain TextOkimoto, T., Tsukihara, M., Kataoka, K., Kato, A., Nishino, K., Naoi, Y., Sakai, S. (2008) GaN- and AlGaN-based UV-LEDs on sapphire by metal-organic chemical vapor deposition. physica status solidi (c), 5 (9). 3066-3068 doi:10.1002/pssc.200779205
In(2008, July) physica status solidi (c) Vol. 5 (9) Wiley

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Choi, R. J., Kubo, S., Tsukihara, M., Inoue, K., Naoi, Y., Nishino, K., Sakai, S. (2005) Effects of V/III flux ratio on AlInGaN/AlGaN quantum wells grown by atmospheric pressure MOCVD. physica status solidi (c), 2 (7). 2149-2152 doi:10.1002/pssc.200461442
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Matsuoka, R., Okimoto, T., Nishino, K., Naoi, Y., Sakai, S. (2009) AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate. Journal of Crystal Growth, 311 (10). 2847-2849 doi:10.1016/j.jcrysgro.2009.01.027
Fu, Y. K., Tun, C. J., Kuo, C. H. (2008) Dislocation annihilation in GaN with multiple MgxNy/GaN buffer layers by metal organic chemical vapor deposition. physica status solidi (c), 5 (6). 1499-1501 doi:10.1002/pssc.200778419
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