| Reference Type | Journal (article/letter/editorial) |
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| Title | Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering |
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| Journal | physica status solidi (c) |
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| Authors | Müller, R. | Author |
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| Künecke, U. | Author |
| Thuaire, A. | Author |
| Mermoux, M. | Author |
| Pons, M. | Author |
| Wellmann, P. | Author |
| Year | 2006 (March) | Volume | 3 |
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| Issue | 3 |
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| Publisher | Wiley |
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| DOI | doi:10.1002/pssc.200564148Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 5111606 | Long-form Identifier | mindat:1:5:5111606:0 |
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| GUID | 0 |
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| Full Reference | Müller, R., Künecke, U., Thuaire, A., Mermoux, M., Pons, M., Wellmann, P. (2006) Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering. physica status solidi (c), 3 (3). 558-561 doi:10.1002/pssc.200564148 |
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| Plain Text | Müller, R., Künecke, U., Thuaire, A., Mermoux, M., Pons, M., Wellmann, P. (2006) Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering. physica status solidi (c), 3 (3). 558-561 doi:10.1002/pssc.200564148 |
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| In | (2006, March) physica status solidi (c) Vol. 3 (3) Wiley |
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