Quay, R., Kiefer, R., van Raay, F., Reiner, R., Kappeler, O., Müller, S., Dammann, M., Bronner, W., Mikulla, M., Schlechtweg, M., Wiegner, D., Seyfried, U., Templ, W., Weimann, G. (2006) GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate. physica status solidi (c), 3 (3). 473-477 doi:10.1002/pssc.200564167

See Also

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	Waltereit, P., Bronner, W., Quay, R., Dammann, M., Kiefer, R., Müller, S., Musser, M., Kühn, J., Raay, F. van, Seelmann, M., Mikulla, M., Ambacher, O., Rijs, F. van, Rödle, T., Riepe, K. (2009) GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability. physica status solidi (a), 206 (6). 1215-1220 doi:10.1002/pssa.200880774
	Waltereit, P., Bronner, W., Quay, R., Dammann, M., Müller, S., Kiefer, R., Raynor, B., Mikulla, M., Weimann, G. (2008) High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates. physica status solidi (a), 205 (5). 1078-1080 doi:10.1002/pssa.200778442
	Brückner, Peter, Kiefer, R., Haupt, C., Leuther, A., Müller, S., Quay, R., Schwantuschke, D., Mikulla, M., Ambacher, O. (2012) Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications. physica status solidi (c), 9 (3). 903-906 doi:10.1002/pssc.201100462
	Kiefer, R., Quay, R., Müller, S., Feltgen, T., Raynor, B., Schleife, J., Köhler, K., Massler, H., Ramberger, S., van Raay, F., Tessmann, A., Mikulla, M., Weimann, G. (2003) Development of a 2″-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications. physica status solidi (a), 200 (1). 191-194 doi:10.1002/pssa.200303415
	Waltereit, P., Bronner, W., Quay, R., Dammann, M., Müller, S., Musser, M., Mikulla, M., Ambacher, O., van Rijs, F., Rödle, T., Riepe, K. (2009) Development of AlGaN/GaN HEMTs with efficiencies above 60% up to 100 V for next generation mobile communication 100 W power bars. physica status solidi (c), 6 (6). 1369-1372 doi:10.1002/pssc.200881502
	Waltereit, P., Bronner, W., Musser, M., Raay, F. van, Dammann, M., Cäsar, M., Müller, S., Kirste, L., Köhler, K., Quay, R., Mikulla, M., Ambacher, O. (2012) Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures. Journal of Applied Physics, 112 (5). 53718pp. doi:10.1063/1.4752257
	Waltereit, P., Bronner, W., Quay, R., Dammann, M., Müller, S., Köhler, K., Mikulla, M., Ambacher, O., Harm, L., Lorenzini, M., Rödle, T., Riepe, K., Bellmann, K., Buchheim, C., Goldhahn, R. (2010) Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency. physica status solidi (c), 7 (10). 2398-2403 doi:10.1002/pssc.200983853
	Schlechtweg, M., Tessmann, A., Leuther, A., Schwörer, C., Massler, H., Mikulla, M., Walther, M., Lösch, R. (2006) Advanced millimeter-wave ICs using metamorphic HEMT technology. physica status solidi (c), 3 (3). 465-468 doi:10.1002/pssc.200564166
	Baeumler, M., Polyakov, V.M., Gütle, F., Dammann, M., Benkhelifa, F., Waltereit, P., Reiner, R., Müller, S., Wespel, M., Quay, R., Mikulla, M., Wagner, J., Ambacher, O. (2014) Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications. Acta Physica Polonica A, 125 (4). 982-985 doi:10.12693/aphyspola.125.982
	Müller, S., Köhler, K., Kiefer, R., Quay, R., Baeumler, M., Kirste, L. (2005) Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer. physica status solidi (c), 2 (7). 2639-2642 doi:10.1002/pssc.200461288
	Waltereit, Patrick, Bronner, Wolfgang, Kiefer, Rudolf, Quay, Rüdiger, Dammmann, Michael, Cäsar, Markus, Brückner, Peter, Müller, Stefan, Mikulla, Michael, Ambacher, Oliver (2012) Trade-offs between performance and reliability in AlGaN/GaN transistors. physica status solidi (c), 9 (2). 365-368 doi:10.1002/pssc.201100294