| Reference Type | Journal (article/letter/editorial) |
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| Title | Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes |
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| Journal | physica status solidi (c) |
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| Authors | Aizawa, H. | Author |
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| Soejima, K. | Author |
| Hori, A. | Author |
| Satake, A. | Author |
| Fujiwara, K. | Author |
| Year | 2006 (March) | Volume | 3 |
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| Issue | 3 |
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| Publisher | Wiley |
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| DOI | doi:10.1002/pssc.200564117Search in ResearchGate |
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| Generate Citation Formats |
| Mindat Ref. ID | 5111545 | Long-form Identifier | mindat:1:5:5111545:0 |
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|
| GUID | 0 |
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| Full Reference | Aizawa, H., Soejima, K., Hori, A., Satake, A., Fujiwara, K. (2006) Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes. physica status solidi (c), 3 (3). 589-593 doi:10.1002/pssc.200564117 |
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| Plain Text | Aizawa, H., Soejima, K., Hori, A., Satake, A., Fujiwara, K. (2006) Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes. physica status solidi (c), 3 (3). 589-593 doi:10.1002/pssc.200564117 |
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| In | (2006, March) physica status solidi (c) Vol. 3 (3) Wiley |
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