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Ohno, Takeo, Oyama, Yutaka, Nishizawa, Jun-ichi (2006) Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions. physica status solidi (c), 3 (3). 635-638 doi:10.1002/pssc.200564135

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Reference TypeJournal (article/letter/editorial)
TitleTunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions
Journalphysica status solidi (c)
AuthorsOhno, TakeoAuthor
Oyama, YutakaAuthor
Nishizawa, Jun-ichiAuthor
Year2006 (March)Volume3
Issue3
PublisherWiley
DOIdoi:10.1002/pssc.200564135Search in ResearchGate
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Mindat Ref. ID5111580Long-form Identifiermindat:1:5:5111580:3
GUID0
Full ReferenceOhno, Takeo, Oyama, Yutaka, Nishizawa, Jun-ichi (2006) Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions. physica status solidi (c), 3 (3). 635-638 doi:10.1002/pssc.200564135
Plain TextOhno, Takeo, Oyama, Yutaka, Nishizawa, Jun-ichi (2006) Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions. physica status solidi (c), 3 (3). 635-638 doi:10.1002/pssc.200564135
In(2006, March) physica status solidi (c) Vol. 3 (3) Wiley

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Ohno, Takeo, Oyama, Yutaka, Nishizawa, Jun-ichi (2006) Deep levels in GaAs ultrashallow sidewall pin junctions measured by photocapacitance method. physica status solidi (c), 3 (3). 639-642 doi:10.1002/pssc.200564134
Ohno, Takeo, Oyama, Yutaka, Sato, Shota, Nishizawa, Jun-ichi (2008) Tunneling mechanism of GaAs ultrashallow sidewall tunnel junction. physica status solidi (c), 5 (9). 2882-2885 doi:10.1002/pssc.200779210
Oyama, Yutaka, Ohno, Takeo, Tezuka, Kenji, Suto, Ken, Nishizawa, Jun-ichi (2002) Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions. Applied Physics Letters, 81 (14). 2563-2565 doi:10.1063/1.1510162
Ohno, Takeo, Oyama, Yutaka (2010) Tunneling current of GaAs ultrashallow sidewall n+p+n+ and p+n+in+ structure prepared by area-selective molecular layer epitaxy. physica status solidi (c), 7 (10). 2474-2477 doi:10.1002/pssc.200983859
Ohno, Takeo, Oyama, Yutaka, Nishizawa, Jun-ichi (2008) The substrate orientation dependence of Be doping in molecular layer epitaxy of GaAs. physica status solidi (c), 5 (9). 2763-2765 doi:10.1002/pssc.200779213
Oyama, Yutaka, Ohno, Takeo, Suto, Ken, Nishizawa, Jun-ichi (2004) Effects of AsH[sub 3] Surface Treatment for the Improvement of Ultrashallow Area-Selective Regrown GaAs Sidewall Tunnel Junction. Journal of the Electrochemical Society, 151. doi:10.1149/1.1639023
Oyama, Yutaka, Ohno, Takeo, Sato, Taiji, Nishizawa, Jun-ichi (2007) Characteristics of electron beam-evaporated highk -TiOx thin films on n-GaAs. physica status solidi (c), 4 (5). 1723-1726 doi:10.1002/pssc.200674263
Ohno, Takeo, Oyama, Yutaka, Nishizawa, Jun-ichi (2006) The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics. Applied Surface Science, 252. 7283-7285 doi:10.1016/j.apsusc.2006.02.131
Oyama, Yutaka, Ohno, Takeo, Suto, Ken, Nishizawa, Jun-ichi (2005) Ultra shallow sidewall GaAs tunnel junctions prepared by low-temperature area-selective epitaxial re-growth method. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.137
Ohno, Takeo, Oyama, Yutaka, Tezuka, Kenji, Suto, Ken, Nishizawa, Jun-ichi (2003) Area-selective regrowth followed by AsH3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions. Applied Surface Science, 216. 549-553 doi:10.1016/s0169-4332(03)00506-3
Oyama, Yutaka, Kimura, Toshihiro, Nishizawa, Jun-ichi (2007) Dislocation-induced deep levels in ELO InP revealed by point contact photocapacitance measurements. physica status solidi (c), 4 (5). 1735-1738 doi:10.1002/pssc.200674262
 
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