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(2002, October) Journal of Applied Physics Vol. 92 (8) AIP Publishing

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Reference TypeJournal (issue)
JournalJournal of Applied Physics
Year2002 (October)Volume92
Issue<   8   >
PublisherAIP Publishing
Mindat Ref. ID5116974Long-form Identifiermindat:1:5:5116974:3
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Full Reference(2002, October) Journal of Applied Physics Vol. 92 (8) AIP Publishing
Plain Text(2002, October) Journal of Applied Physics Vol. 92 (8) AIP Publishing
In(2002) Journal of Applied Physics Vol. 92. AIP Publishing

Contains

Shapira, Y., Bindilatti, V. (2002) Magnetization-step studies of antiferromagnetic clusters and single ions: Exchange, anisotropy, and statistics. Journal of Applied Physics, 92 (8). 4155-4185 doi:10.1063/1.1507808
Bian, Shaoping, Zhang, Weiya, Kim, Sun Il, Embaye, Natnael B., Hanna, Gabriel J., Park, Jeong Joon, Canfield, Brian K., Kuzyk, Mark G. (2002) High-efficiency optical phase conjugation by degenerate four-wave mixing in volume media of disperse red 1-doped poly(methyl methacrylate). Journal of Applied Physics, 92 (8). 4186-4193 doi:10.1063/1.1509085
Jeong, D.-Y., Ye, Y. H., Zhang, Q. M. (2002) Effective optical properties associated with wave propagation in photonic crystals of finite length along the propagation direction. Journal of Applied Physics, 92 (8). 4194-4200 doi:10.1063/1.1506390
Hirschausen, D., Kane, D. M. (2002) Laser removal of paraffin wax from glass surfaces. Journal of Applied Physics, 92 (8). 4201-4208 doi:10.1063/1.1509097
Brandi, H. S., Latgé, A., Oliveira, L. E. (2002) Magnetic-field and laser effects on the electronic and donor states in semiconducting quantum dots. Journal of Applied Physics, 92 (8). 4209-4212 doi:10.1063/1.1509110
Wills, J. B., Smith, J. A., Boxford, W. E., Elks, J. M. F., Ashfold, M. N. R., Orr-Ewing, A. J. (2002) Measurements of C2 and CH concentrations and temperatures in a dc arc jet using cavity ring-down spectroscopy. Journal of Applied Physics, 92 (8). 4213-4222 doi:10.1063/1.1505675
Abada, Hana, Chabert, Pascal, Booth, Jean Paul, Robiche, Jérôme, Cartry, G. (2002) Gas temperature gradients in a CF4 inductive discharge. Journal of Applied Physics, 92 (8). 4223-4230 doi:10.1063/1.1505683
Kuznetsova, I. V., Kalashnikov, N. Y., Gutsol, A. F., Fridman, A. A., Kennedy, L. A. (2002) Effect of “overshooting” in the transitional regimes of the low-current gliding arc discharge. Journal of Applied Physics, 92 (8). 4231-4237 doi:10.1063/1.1505682
Cho, Byeong-Ok, Wang, Jianjun, Chang, Jane P. (2002) Metalorganic precursor decomposition and oxidation mechanisms in plasma-enhanced ZrO2 deposition. Journal of Applied Physics, 92 (8). 4238-4244 doi:10.1063/1.1506421
Demokan, O., Akman, S. (2002) Glow discharge with diminishing neutral plasma. Journal of Applied Physics, 92 (8). 4245-4248 doi:10.1063/1.1486056
De Marchi, G., Mattei, G., Mazzoldi, P., Sada, C., Miotello, A. (2002) Two stages in the kinetics of gold cluster growth in ion-implanted silica during isothermal annealing in oxidizing atmosphere. Journal of Applied Physics, 92 (8). 4249-4254 doi:10.1063/1.1506423
Pankov, V., Evstigneev, M., Prince, R. H. (2002) Enhanced stability of rocksalt-type AIN phase in AIN/TiN superlattices synthesized by room-temperature pulsed laser deposition. Journal of Applied Physics, 92 (8). 4255-4260 doi:10.1063/1.1506398
Danilov, I., de Souza, J. P., Boudinov, H., Bettini, J., de Carvalho, M. M. G. (2002) Electrical isolation of InGaP by proton and helium ion irradiation. Journal of Applied Physics, 92 (8). 4261-4265 doi:10.1063/1.1506200
Ramsdale, C. M., Barker, J. A., Arias, A. C., MacKenzie, J. D., Friend, R. H., Greenham, N. C. (2002) The origin of the open-circuit voltage in polyfluorene-based photovoltaic devices. Journal of Applied Physics, 92 (8). 4266-4270 doi:10.1063/1.1506385
Lanzo, J., Nicoletta, F. P., De Filpo, G., Chidichimo, G. (2002) From nematic emulsions to polymer dispersed liquid crystals. Journal of Applied Physics, 92 (8). 4271-4275 doi:10.1063/1.1505986
O’Leary, Stephen K., Malik, Saad M. (2002) A simplified joint density of states analysis of hydrogenated amorphous silicon. Journal of Applied Physics, 92 (8). 4276-4282 doi:10.1063/1.1504174
Pelto, Christopher M., Chang, Y. Austin, Chen, Yong, Williams, R. Stanley (2002) Thermally stable, oxidation resistant capping technology for Ti/Al ohmic contacts to n-GaN. Journal of Applied Physics, 92 (8). 4283-4289 doi:10.1063/1.1507809
Luysberg, M., Kirch, D., Trinkaus, H., Holländer, B., Lenk, St., Mantl, S., Herzog, H.-J., Hackbarth, T., Fichtner, P. F. P. (2002) Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates. Journal of Applied Physics, 92 (8). 4290-4295 doi:10.1063/1.1504496
Brinkmann, Martin, Lipowsky, Reinhard (2002) Wetting morphologies on substrates with striped surface domains. Journal of Applied Physics, 92 (8). 4296-4306 doi:10.1063/1.1506003
Shao, Lin, Wang, Xuemei, Liu, Jiarui, Bennett, Joe, Larsen, Larry, Chu, Wei-Kan (2002) Athermal annealing at room temperature and enhanced activation of low- energy boron implants with high-energy Si coimplantation. Journal of Applied Physics, 92 (8). 4307-4311 doi:10.1063/1.1505672
Duboz, Jean Yves (2002) Hot photoluminescence in GaN: Carrier energy relaxation and hot phonon effects. Journal of Applied Physics, 92 (8). 4312-4319 doi:10.1063/1.1499525
Wilde, Markus, Matsumoto, Masuaki, Fukutani, Katsuyuki, Liu, Ziyuan, Ando, Koichi, Kawashima, Yoshiya, Fujieda, Shinji (2002) Influence of H2-annealing on the hydrogen distribution near SiO2/Si(100) interfaces revealed byin situnuclear reaction analysis. Journal of Applied Physics, 92 (8). 4320-4329 doi:10.1063/1.1509084
Teng, J. H., Dong, J. R., Chua, S. J., Lai, M. Y., Foo, B. C., Thompson, D. A., Robinson, B. J., Lee, A. S. W., Hazell, John, Sproule, Irwin (2002) Controlled group V intermixing in InGaAsP quantum well structures and its application to the fabrication of two section tunable lasers. Journal of Applied Physics, 92 (8). 4330-4335 doi:10.1063/1.1508428
Ignatova, V. A., Lebedev, O. I., Wätjen, U., Van Vaeck, L., Van Landuyt, J., Gijbels, R., Adams, F. (2002) Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions. Journal of Applied Physics, 92 (8). 4336-4341 doi:10.1063/1.1508425
Vignjevic, R., Bourne, N. K., Millett, J. C. F., De Vuyst, T. (2002) Effects of orientation on the strength of the aluminum alloy 7010-T6 during shock loading: Experiment and simulation. Journal of Applied Physics, 92 (8). 4342-4348 doi:10.1063/1.1505996
Sanchez-Valle, Carmen, Daniel, Isabelle, Reynard, Bruno, Abraham, Robert, Goutaudier, Christelle (2002) Optimization of Sm3+ fluorescence in Sm-doped yttrium aluminum garnet: Application to pressure calibration in diamond-anvil cell at high temperature. Journal of Applied Physics, 92 (8). 4349-4353 doi:10.1063/1.1509843
Ko, Hang-Ju, Yao, Takafumi, Chen, Yefan, Hong, Soon-Ku (2002) Investigation of ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxy. Journal of Applied Physics, 92 (8). 4354-4360 doi:10.1063/1.1509103
Héroux, J. B., Yang, X., Wang, W. I. (2002) Photoreflectance spectroscopy of strained (In)GaAsN/GaAs multiple quantum wells. Journal of Applied Physics, 92 (8). 4361-4366 doi:10.1063/1.1507817
Tripura Sundari, S. (2002) Disorder effects on dielectric response of Si irradiated with Ar+. Journal of Applied Physics, 92 (8). 4367-4374 doi:10.1063/1.1465508
Smith, Gregory D., Firth, Steven, Clark, Robin J. H., Cardona, Manuel (2002) First- and second-order Raman spectra of galena (PbS). Journal of Applied Physics, 92 (8). 4375-4380 doi:10.1063/1.1505670
Choi, H. W., Chua, S. J., Tripathy, S. (2002) Morphological and structural analyses of plasma-induced damage ton-type GaN. Journal of Applied Physics, 92 (8). 4381-4385 doi:10.1063/1.1509844
Yan, Li, Woollam, John A. (2002) Optical constants and roughness study of dc magnetron sputtered iridium films. Journal of Applied Physics, 92 (8). 4386-4392 doi:10.1063/1.1509091
Kishimoto, Kengo, Nagamoto, Yasuyuki, Miki, Toshikatsu, Koyanagi, Tsuyoshi, Matsubara, Kakuei (2002) Microstructure and thermoelectric properties of Cr-doped β-FeSi2 sintered with micrograins treated in radio frequency plasmas of SiH4 and GeH4 gases. Journal of Applied Physics, 92 (8). 4393-4401 doi:10.1063/1.1507814
Bohnenkamp, Ulrich, Sandström, Rolf, Grimvall, Göran (2002) Electrical resistivity of steels and face-centered-cubic iron. Journal of Applied Physics, 92 (8). 4402-4407 doi:10.1063/1.1502182
Wang, Cheng, Kuzuu, Nobu, Tamai, Yoshimori (2002) Effects of charge transfer on a-SiO2 surface structure: A molecular dynamics study. Journal of Applied Physics, 92 (8). 4408-4413 doi:10.1063/1.1506392
von Haartman, Martin, Sandén, Martin, Östling, Mikael, Bosman, Gijs (2002) Random telegraph signal noise in SiGe heterojunction bipolar transistors. Journal of Applied Physics, 92 (8). 4414-4421 doi:10.1063/1.1506197
Radhia, S. Ben, Ridene, S., Boujdaria, K., Bouchriha, H., Fishman, G. (2002) Band structures of Ge and InAs: A 20 k.p model. Journal of Applied Physics, 92 (8). 4422-4430 doi:10.1063/1.1505990
Jameson, John R., Harrison, Walter, Griffin, P. B. (2002) Electronic susceptibility in thin films and interfaces. Journal of Applied Physics, 92 (8). 4431-4440 doi:10.1063/1.1507812
Feng, Shih-Wei, Cheng, Yung-Chen, Chung, Yi-Yin, Yang, C. C., Lin, Yen-Sheng, Hsu, Chen, Ma, Kung-Jeng, Chyi, Jen-Inn (2002) Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures. Journal of Applied Physics, 92 (8). 4441-4448 doi:10.1063/1.1506393
Simonetti, O., Maurel, T., Jourdain, M. (2002) Characterization of ultrathin metal–oxide–semiconductor structures using coupled current and capacitance–voltage models based on quantum calculation. Journal of Applied Physics, 92 (8). 4449-4458 doi:10.1063/1.1506000
Ryzhii, V., Satou, A., Khmyrova, I., Ikegami, T., Kubota, K., Vaccaro, P. O., Zanardi Ocampo, J. M., Aida, T. (2002) Performance analysis of lateral p–n junction laser-transistor. Journal of Applied Physics, 92 (8). 4459-4464 doi:10.1063/1.1507813
Evwaraye, A. O., Smith, S. R., Mitchel, W. C., Capano, M. A. (2002) Capacitance dispersion in ion implanted 4H and 6H-silicon carbide. Journal of Applied Physics, 92 (8). 4465-4469 doi:10.1063/1.1505692
Davazoglou, D., Kouvatsos, D. N. (2002) Study of the electronic structure of amorphous and crystallized low pressure chemically vapor deposited silicon films near the absorption threshold. Journal of Applied Physics, 92 (8). 4470-4474 doi:10.1063/1.1508431
Bennett, Herbert S. (2002) Multidimensional, closed-form analytic expressions for mobilities in Ga1−xAlxAs heterostructures. Journal of Applied Physics, 92 (8). 4475-4485 doi:10.1063/1.1507815
Gómez, I., Domínguez-Adame, F., Diez, E., Orellana, P. (2002) Transport in random quantum dot superlattices. Journal of Applied Physics, 92 (8). 4486-4489 doi:10.1063/1.1503393
Matulionis, A., Katilius, R., Liberis, J., Ardaravičius, L., Eastman, L. F., Shealy, J. R., Smart, J. (2002) Hot-electron-temperature relaxation time in a two-dimensional electron gas: AlGaN/GaN at 80 K. Journal of Applied Physics, 92 (8). 4490-4497 doi:10.1063/1.1510166
Tahar, Radhouane Bel Hadj, Tahar, Noureddine Bel Hadj (2002) Mechanism of carrier transport in aluminum-doped zinc oxide. Journal of Applied Physics, 92 (8). 4498-4501 doi:10.1063/1.1509083
Bozhkov, V. G., Kuzyakov, D. Ju. (2002) Low-frequency noise and current–voltage characteristics of Schottky barrier contacts in a wide temperature range. Journal of Applied Physics, 92 (8). 4502-4512 doi:10.1063/1.1502918
Berven, C. A., Wybourne, M. N., Clarke, L., Longstreth, L., Hutchison, J. E., Mooster, J. L. (2002) Background charge fluctuations and the transport properties of biopolymer-gold nanoparticle complexes. Journal of Applied Physics, 92 (8). 4513-4517 doi:10.1063/1.1506399
Qian, Q., Tyson, T. A., Dubourdieu, C., Bossak, A., Sénateur, J. P., Deleon, M., Bai, J., Bonfait, G., Maria, J. (2002) Structural, magnetic, and transport studies of La0.8MnO3 films. Journal of Applied Physics, 92 (8). 4518-4523 doi:10.1063/1.1505667
Schmitte, Till, Westerholt, Kurt, Zabel, Hartmut (2002) Magneto-optical Kerr effect in the diffracted light of Fe gratings. Journal of Applied Physics, 92 (8). 4524-4530 doi:10.1063/1.1506190
Van Bael, M. J., Raedts, S., Temst, K., Swerts, J., Moshchalkov, V. V., Bruynseraede, Y. (2002) Magnetic domains and flux pinning properties of a nanostructured ferromagnet/superconductor bilayer. Journal of Applied Physics, 92 (8). 4531-4537 doi:10.1063/1.1502185
Carey, M. J., Le, T., Thompson, T., Gurney, B. A. (2002) IrMn spin valves using Si layers. Journal of Applied Physics, 92 (8). 4538-4540 doi:10.1063/1.1506401
Loloee, R., Crimp, M. A. (2002) Effect of growth temperature on the structure and magnetic properties of sputtered biepitaxial (111) permalloy films. Journal of Applied Physics, 92 (8). 4541-4544 doi:10.1063/1.1506400
Onoue, T., Asahi, T., Kuramochi, K., Kawaji, J., Osaka, T., Ariake, J., Ouchi, K., Sáfrán, G., Yaguchi, N. (2002) Microstructure and magnetic properties of Co/Pd multilayered thin films with C or Si seedlayer. Journal of Applied Physics, 92 (8). 4545-4552 doi:10.1063/1.1506420
Coffey, Kevin R., Thomson, Thomas, Thiele, Jan-Ulrich (2002) Angular dependence of the switching field of thin-film longitudinal and perpendicular magnetic recording media. Journal of Applied Physics, 92 (8). 4553-4559 doi:10.1063/1.1508430
Wang, Xiaobin, Bertram, H. Neal (2002) Field and temperature-dependent attempt frequency for dynamic-thermal reversal of interacting magnetic grains. Journal of Applied Physics, 92 (8). 4560-4570 doi:10.1063/1.1509107
Wu, Y., Ishimaru, Y., Wakana, H., Adachi, S., Tarutani, Y., Tanabe, K. (2002) Identification of different phases in barriers of interface-engineered ramp-edge Josephson junctions: Formation mechanisms and influences on electrical properties. Journal of Applied Physics, 92 (8). 4571-4577 doi:10.1063/1.1508427
Wang, Haifeng, Cao, Wenwu (2002) Determination of full set material constants of piezoceramics from phase velocities. Journal of Applied Physics, 92 (8). 4578-4583 doi:10.1063/1.1505998
Gonon, P., Sylvestre, A. (2002) Dielectric properties of fluorocarbon thin films deposited by radio frequency sputtering of polytetrafluoroethylene. Journal of Applied Physics, 92 (8). 4584-4589 doi:10.1063/1.1505983
Boscolo, I., Cialdi, S. (2002) Dielectric-spontaneous polarization versus electron emission in perovskite cathodes. Journal of Applied Physics, 92 (8). 4590-4593 doi:10.1063/1.1505992
Jin, H. Z., Zhu, Jing (2002) Size effect and fatigue mechanism in ferroelectric thin films. Journal of Applied Physics, 92 (8). 4594-4598 doi:10.1063/1.1506193
Zhang, S. T., Yang, B., Webb, J. F., Chen, Y. F., Liu, Z. G., Wang, D. S., Wang, Y., Ming, N. B. (2002) Structural and electrical properties of homologous Srm−3Bi4TimO3m+3 (m=3, 4, 5, and 6) thin films. Journal of Applied Physics, 92 (8). 4599-4604 doi:10.1063/1.1507810
Ligatchev, V., Wong, T. K. S., Liu, B., Rusli, (2002) Atomic structure and defect densities in low dielectric constant carbon doped hydrogenated silicon oxide films, deposited by plasma-enhanced chemical vapor deposition. Journal of Applied Physics, 92 (8). 4605-4611 doi:10.1063/1.1507811
Tuncer, Enis, Nettelblad, Bo, Gubañski, Stanisław M. (2002) Non-Debye dielectric relaxation in binary dielectric mixtures (50-50): Randomness and regularity in mixture topology. Journal of Applied Physics, 92 (8). 4612-4624 doi:10.1063/1.1505975
Shimoyama, Kazuo, Kiyohara, Masahiro, Kubo, Kousuke, Uedono, Akira, Yamabe, Kikuo (2002) Epitaxial growth of BaTiO3/SrTiO3 structures on SrTiO3 substrate with automatic feeding of oxygen from the substrate. Journal of Applied Physics, 92 (8). 4625-4630 doi:10.1063/1.1506196
Watanabe, Masashi, Shirai, Hirofusa, Hirai, Toshihiro (2002) Wrinkled polypyrrole electrode for electroactive polymer actuators. Journal of Applied Physics, 92 (8). 4631-4637 doi:10.1063/1.1505674
Xue, D., Iyi, N., Kitamura, K. (2002) Predicting temperature dependence of the refractive index and nonlinear optical coefficients in lithium niobate. Journal of Applied Physics, 92 (8). 4638-4643 doi:10.1063/1.1510173
Kim, Chung-Sik, Kim, Dong Jin, Hwang, Yoon-Hwae, Kim, Hyung Kook, Kim, Jung Nam (2002) Electrical properties of Li2B4O7 single crystals in the [001] direction: Comparison between crystals grown from Li2CO3 and B2O3 mixed powder and from Li2B4O7 powder. Journal of Applied Physics, 92 (8). 4644-4648 doi:10.1063/1.1505980
Ngo, A. T., Pileni, M. P. (2002) Cigar-shaped ferrite nanocrystals: Orientation of the easy magnetic axes. Journal of Applied Physics, 92 (8). 4649-4652 doi:10.1063/1.1504494
Johnson, H. T., Nguyen, V., Bower, A. F. (2002) Simulated self-assembly and optoelectronic properties of InAs/GaAs quantum dot arrays. Journal of Applied Physics, 92 (8). 4653-4663 doi:10.1063/1.1505687
Tchebotareva, A., Brebner, J. L., Roorda, S., Desjardins, P., White, C. W. (2002) Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix. Journal of Applied Physics, 92 (8). 4664-4671 doi:10.1063/1.1507822
Moreno, M., Trampert, A., Jenichen, B., Däweritz, L., Ploog, K. H. (2002) Correlation of structure and magnetism in GaAs with embedded Mn(Ga)As magnetic nanoclusters. Journal of Applied Physics, 92 (8). 4672-4677 doi:10.1063/1.1506402
Nesheva, D., Raptis, C., Perakis, A., Bineva, I., Aneva, Z., Levi, Z., Alexandrova, S., Hofmeister, H. (2002) Raman scattering and photoluminescence from Si nanoparticles in annealed SiOx thin films. Journal of Applied Physics, 92 (8). 4678-4683 doi:10.1063/1.1504176
Viera, G., Mikikian, M., Bertran, E., Cabarrocas, P. Roca i, Boufendi, L. (2002) Atomic structure of the nanocrystalline Si particles appearing in nanostructured Si thin films produced in low-temperature radiofrequency plasmas. Journal of Applied Physics, 92 (8). 4684-4694 doi:10.1063/1.1506382
Zhu, Jianhong, Leach, W. Thomas, Stanley, Scott K., Ekerdt, John G., Yan, Xiaoming (2002) Growth of high-density Si nanoparticles on Si3N4 and SiO2 thin films by hot-wire chemical vapor deposition. Journal of Applied Physics, 92 (8). 4695-4698 doi:10.1063/1.1509841
Skowronski, M., Liu, J. Q., Vetter, W. M., Dudley, M., Hallin, C., Lendenmann, H. (2002) Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes. Journal of Applied Physics, 92 (8). 4699-4704 doi:10.1063/1.1505994
Alessandrini, A., Valdrè, G., Morten, B., Prudenziati, M. (2002) Electric force microscopy investigation of the microstructure of thick film resistors. Journal of Applied Physics, 92 (8). 4705-4711 doi:10.1063/1.1506188
Peacock, P. W., Robertson, J. (2002) Band offsets and Schottky barrier heights of high dielectric constant oxides. Journal of Applied Physics, 92 (8). 4712-4721 doi:10.1063/1.1506388
Liu, Xiaoyong, Ren, Cong, Xiao, Gang (2002) Magnetic tunnel junction field sensors with hard-axis bias field. Journal of Applied Physics, 92 (8). 4722-4725 doi:10.1063/1.1507818
Rumyantsev, S. L., Deng, Y., Borovitskaya, E., Dmitriev, A., Knap, W., Pala, N., Shur, M. S., Levinshtein, M. E., Khan, M. Asif, Simin, G., Yang, J., Hu, X. (2002) Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures. Journal of Applied Physics, 92 (8). 4726-4730 doi:10.1063/1.1508432
Chatraphorn, S., Fleet, E. F., Wellstood, F. C. (2002) Relationship between spatial resolution and noise in scanning superconducting quantum interference device microscopy. Journal of Applied Physics, 92 (8). 4731-4740 doi:10.1063/1.1506187
Hastas, N. A., Dimitriadis, C. A., Kamarinos, G. (2002) Effect of interface roughness on gate bias instability of polycrystalline silicon thin-film transistors. Journal of Applied Physics, 92 (8). 4741-4745 doi:10.1063/1.1508421
Xuan, X. C. (2002) Combined thermionic-thermoelectric refrigerator. Journal of Applied Physics, 92 (8). 4746-4750 doi:10.1063/1.1509101
Enpuku, K., Kuroda, D., Tokimizu, D., Yang, T. Q. (2002) Suppression of thermally activated flux entry through a flux dam in high Tc superconducting quantum interference device magnetometer. Journal of Applied Physics, 92 (8). 4751-4757 doi:10.1063/1.1510165
Shefer, E., Breskin, A., Boutboul, T., Chechik, R., Singh, B. K., Cohen, H., Feldman, I. (2002) Photoelectron transport in CsI and CsBr coating films of alkali antimonide and CsI photocathodes. Journal of Applied Physics, 92 (8). 4758-4771 doi:10.1063/1.1505684
Han, P., Yoshida, T. (2002) Growth and transport of clusters in thermal plasma vapor deposition of silicon. Journal of Applied Physics, 92 (8). 4772-4778 doi:10.1063/1.1506396
Su, Wen-Bin, Wang, Jin-Feng, Chen, Hong-Cun, Wang, Wen-Xin, Zhang, Guo-Zhong, Li, Chang-Peng (2002) Nonlinear electrical behavior of the TiO2⋅WO3 varistor. Journal of Applied Physics, 92 (8). 4779-4783 doi:10.1063/1.1503853
Nair, Jaya P., Zon, Ilya, Oron, Matti, Popovitz-Biro, Ronit, Feldman, Yishay, Lubomirsky, Igor (2002) Stoichiometry control during deposition by ion beam sputtering. Journal of Applied Physics, 92 (8). 4784-4790 doi:10.1063/1.1502916
Ma, F., Wang, S., Li, X., Anselm, K. A., Zheng, X. G., Holmes, A. L., Campbell, J. C. (2002) Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions. Journal of Applied Physics, 92 (8). 4791-4795 doi:10.1063/1.1505987
Sun, C., Zhang, X. (2002) Experimental and numerical investigations on microstereolithography of ceramics. Journal of Applied Physics, 92 (8). 4796-4802 doi:10.1063/1.1503410
Holt, Jason K., Swiatek, Maribeth, Goodwin, David G., Atwater, Harry A. (2002) The aging of tungsten filaments and its effect on wire surface kinetics in hot-wire chemical vapor deposition. Journal of Applied Physics, 92 (8). 4803-4808 doi:10.1063/1.1504172
Voss, S., Stolwijk, N. A., Bracht, H. (2002) Spreading-resistance profiling of silicon and germanium at variable temperature. Journal of Applied Physics, 92 (8). 4809-4819 doi:10.1063/1.1499544
Kim, Sang Sub, Seong, Tae Yeon, Kim, Hyun Seung, Je, Jung Ho (2002) Heteroepitaxial growth behavior of SrRuO3/SrTiO3(001) by pulsed laser deposition. Journal of Applied Physics, 92 (8). 4820-4824 doi:10.1063/1.1505978
Grollier, J., Lacour, D., Cros, V., Hamzic, A., Vaurès, A., Fert, A., Adam, D., Faini, G. (2002) Switching the magnetic configuration of a spin valve by current-induced domain wall motion. Journal of Applied Physics, 92 (8). 4825-4827 doi:10.1063/1.1507820
Xi, Haiwen, White, Robert M., Gao, Zheng, Mao, Sining (2002) Antiferromagnetic thickness dependence of blocking temperature in exchange coupled polycrystalline ferromagnet/antiferromagnet bilayers. Journal of Applied Physics, 92 (8). 4828-4830 doi:10.1063/1.1503159
Sahu, Ranjan K., Manoharan, S. Sundar (2002) Double-exchange enhanced magnetoresistance in SrRu0.5Mn0.5O3. Journal of Applied Physics, 92 (8). 4831-4833 doi:10.1063/1.1507819
Sato, Yusuke, Ohkoshi, Shin-ichi, Hashimoto, Kazuhito (2002) Photoinduced Faraday effect in a cobalt-iron polycyanide film. Journal of Applied Physics, 92 (8). 4834-4836 doi:10.1063/1.1507821
Yun, Feng, Reshchikov, Michael A., He, Lei, King, Thomas, Morkoç, Hadis, Novak, Steve W., Wei, Luncun (2002) Energy band bowing parameter in AlxGa1−xN alloys. Journal of Applied Physics, 92 (8). 4837-4839 doi:10.1063/1.1508420
Py, M. A., Buehlmann, H.-J. (2002) Comment on “Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors” [J. Appl. Phys. 91, 3318 (2002)]. Journal of Applied Physics, 92 (8). 4840-4841 doi:10.1063/1.1505688
Valenza, M., Vildeuil, J. C., Rigaud, D. (2002) Response to “Comment on ‘Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors’ ” [J. Appl. Phys. 91, 3318 (2002)]. Journal of Applied Physics, 92 (8). 4842-4843 doi:10.1063/1.1505689
Wang, Xiaoli, Chen, Haydn (2002) Erratum: “Dielectric behaviors under high electric field for Pb(Zn1/3Nb2/3)O3–PbTiO3–BaTiO3 relaxor ferroelectric ceramics” [J. Appl. Phys. 91, 5979 (2002)]. Journal of Applied Physics, 92 (8). 4844 doi:10.1063/1.1506001

See Also

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