Luysberg, M., Kirch, D., Trinkaus, H., Holländer, B., Lenk, St., Mantl, S., Herzog, H.-J., Hackbarth, T., Fichtner, P. F. P. (2002) Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates. Journal of Applied Physics, 92 (8). 4290-4295 doi:10.1063/1.1504496

See Also

These are possibly similar items as determined by title/reference text matching only.

	Holländer, B., Buca, D., Mörschbächer, M., Lenk, St., Mantl, S., Herzog, H.-J., Hackbarth, Th., Loo, R., Caymax, M., Fichtner, P. F. P. (2004) Strain relaxation of pseudomorphic Si1−xGex∕Si(100) heterostructures after Si+ ion implantation. Journal of Applied Physics, 96 (3). 1745-1747 doi:10.1063/1.1765851
	Holländer, B., Lenk, St., Mantl, S., Trinkaus, H., Kirch, D., Luysberg, M., Hackbarth, T., Herzog, H.-J., Fichtner, P.F.P. (2001) Strain relaxation of pseudomorphic heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 175. 357-367 doi:10.1016/s0168-583x(01)00559-6
	Holländer, B., Buca, D., Lenk, St., Mantl, S., Herzog, H.-J., Hackbarth, Th., Loo, R., Caymax, M., Mörschbächer, M.J., Fichtner, P.F.P. (2006) Strain relaxation of pseudomorphic Si1−xGex/Si(100) heterostructures by Si+ ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242 (1). 568-571 doi:10.1016/j.nimb.2005.08.071
	Trinkaus, H., Holländer, B., Rongen, St., Mantl, S., Herzog, H.-J., Kuchenbecker, J., Hackbarth, T. (2000) Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures. Applied Physics Letters, 76 (24). 3552-3554 doi:10.1063/1.126704
	Buca, D., Minamisawa, R. A., Trinkaus, H., Holländer, B., Mantl, S., Loo, R., Caymax, M. (2009) Si+ ion implantation for strain relaxation of pseudomorphic Si1−xGex/Si(100) heterostructures. Journal of Applied Physics, 105 (11). 114905pp. doi:10.1063/1.3139274
	Liszkay, L, Kajcsos, Zs, Barthe, M.-F, Desgardin, P, Hackbarth, Th, Herzog, H.-J, Holländer, B, Mantl, S (2002) Strain relaxation induced by He-implantation at the Si1−xGex/Si(100) interface investigated by positron annihilation. Applied Surface Science, 194. 136-139 doi:10.1016/s0169-4332(02)00113-7
	Buca, D., Minamisawa, R. A., Trinkaus, H., Holländer, B., Nguyen, N. D., Loo, R., Mantl, S. (2009) Relaxation of strained pseudomorphic SixGe1−x layers on He-implanted Si/δ-Si:C/Si(100) substrates. Applied Physics Letters, 95 (14). 144103pp. doi:10.1063/1.3240409
	Trinkaus, H., Buca, D., Minamisawa, R. A., Holländer, B., Luysberg, M., Mantl, S. (2012) Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures. Journal of Applied Physics, 111 (1). 14904pp. doi:10.1063/1.3672447
	Buca, D., Holländer, B., Feste, S., Lenk, St., Trinkaus, H., Mantl, S., Loo, R., Caymax, M. (2007) Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers. Applied Physics Letters, 90 (3). 32108pp. doi:10.1063/1.2431702
	Holländer, B, Mantl, S, Liedtke, R, Mesters, S, Herzog, H.J, Kibbel, H, Hackbarth, T (1999) Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 148 (1). 200-205 doi:10.1016/s0168-583x(98)00690-9
	Mantl, S., Holländer, B., Liedtke, R., Mesters, S., Herzog, H.J., Kibbel, H., Hackbarth, T. (1999) Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogen implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 147 (1). 29-34 doi:10.1016/s0168-583x(98)00601-6