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Valenza, M., Vildeuil, J. C., Rigaud, D. (2002) Response to “Comment on ‘Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors’ ” [J. Appl. Phys. 91, 3318 (2002)]. Journal of Applied Physics, 92 (8). 4842-4843 doi:10.1063/1.1505689

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Reference TypeJournal (article/letter/editorial)
TitleResponse to “Comment on ‘Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors’ ” [J. Appl. Phys. 91, 3318 (2002)]
JournalJournal of Applied Physics
AuthorsValenza, M.Author
Vildeuil, J. C.Author
Rigaud, D.Author
Year2002 (October 15)Volume92
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.1505689Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5117028Long-form Identifiermindat:1:5:5117028:0
GUID0
Full ReferenceValenza, M., Vildeuil, J. C., Rigaud, D. (2002) Response to “Comment on ‘Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors’ ” [J. Appl. Phys. 91, 3318 (2002)]. Journal of Applied Physics, 92 (8). 4842-4843 doi:10.1063/1.1505689
Plain TextValenza, M., Vildeuil, J. C., Rigaud, D. (2002) Response to “Comment on ‘Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors’ ” [J. Appl. Phys. 91, 3318 (2002)]. Journal of Applied Physics, 92 (8). 4842-4843 doi:10.1063/1.1505689
In(2002, October) Journal of Applied Physics Vol. 92 (8) AIP Publishing

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Valenza, M., Vildeuil, J. C., Rigaud, D. (2002) Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors. Journal of Applied Physics, 91 (5). 3318-3323 doi:10.1063/1.1445494
Py, M. A., Buehlmann, H.-J. (2002) Comment on “Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors” [J. Appl. Phys. 91, 3318 (2002)]. Journal of Applied Physics, 92 (8). 4840-4841 doi:10.1063/1.1505688
Savo, Bonaventura, Wellstood, Frederick C., Clarke, John (1988) Response to ‘‘Comment on ‘Low‐frequency excess noise in Nb‐Al2O3‐Nb Josephson tunnel junctions’ ’’ [Appl. Phys. Lett.52, 2001 (1988)]. Applied Physics Letters, 52 (23). 2001-2002 doi:10.1063/1.99601
Luo, X. Y., O'Hara, A., Li, X., Wang, P. F., Zhang, E. X., Schrimpf, R. D., Pantelides, S. T., Fleetwood, D. M. (2024) Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors. Journal of Applied Physics, 135 (2) doi:10.1063/5.0187747
Rhayem, J., Rigaud, D., Valenza, M., Szydlo, N., Lebrun, H. (2000) 1/f noise modeling in long channel amorphous silicon thin film transistors. Journal of Applied Physics, 87 (4). 1983-1989 doi:10.1063/1.372124
Rhayem, J., Valenza, M., Rigaud, D., Szydlo, N., Lebrun, H. (1998) 1/f noise investigations in small channel length amorphous silicon thin film transistors. Journal of Applied Physics, 83 (7). 3660-3667 doi:10.1063/1.366586
Haddab, Y., Deveaud, B., Bühlmann, H.‐J., Ilegems, M. (1995) Low‐frequency noise measurements of AlxGa1−xAs/InyGa1−yAs/GaAs high electron mobility transistors. Journal of Applied Physics, 78 (4). 2509-2514 doi:10.1063/1.360106
Valenza, M., Barros, C., Dumas, M., Rigaud, D., Ducourant, T., Szydlo, N., Lebrun, H. (1996) Conduction and 1/f noise analysis in amorphous silicon thin-film transistors. Journal of Applied Physics, 79 (2). 923pp. doi:10.1063/1.360873
Tang, Y. L. (2003) Comment on “Transmission electron microscopy evidence for phase transformation from Bi2Sr2CuO6 to Bi2Sr2Ca2Cu3O10” [Appl. Phys. Lett. 81, 688 (2002)]. Applied Physics Letters, 82 (26). 4842 doi:10.1063/1.1588755
Abdel-Motaleb, Ibrahim M., Korotkov, R. Y. (2006) Response to “Comment on ‘Modeling of the electron mobility in GaN materials’” [J. Appl. Phys. 99, 036106 (2006)]. Journal of Applied Physics, 99 (3). 36107pp. doi:10.1063/1.2170012
Korotkov, A. L. (2003) Comment on “Study on the quantum efficiency of resonant cavity enhanced GaAs far-infrared detectors” [J. Appl. Phys. 91, 5538 (2002)]. Journal of Applied Physics, 93 (1). 786-787 doi:10.1063/1.1527723
 
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