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Radhia, S. Ben, Ridene, S., Boujdaria, K., Bouchriha, H., Fishman, G. (2002) Band structures of Ge and InAs: A 20 k.p model. Journal of Applied Physics, 92 (8). 4422-4430 doi:10.1063/1.1505990

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Reference TypeJournal (article/letter/editorial)
TitleBand structures of Ge and InAs: A 20 k.p model
JournalJournal of Applied Physics
AuthorsRadhia, S. BenAuthor
Ridene, S.Author
Boujdaria, K.Author
Bouchriha, H.Author
Fishman, G.Author
Year2002 (October 15)Volume92
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.1505990Search in ResearchGate
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Mindat Ref. ID5117045Long-form Identifiermindat:1:5:5117045:7
GUID0
Full ReferenceRadhia, S. Ben, Ridene, S., Boujdaria, K., Bouchriha, H., Fishman, G. (2002) Band structures of Ge and InAs: A 20 k.p model. Journal of Applied Physics, 92 (8). 4422-4430 doi:10.1063/1.1505990
Plain TextRadhia, S. Ben, Ridene, S., Boujdaria, K., Bouchriha, H., Fishman, G. (2002) Band structures of Ge and InAs: A 20 k.p model. Journal of Applied Physics, 92 (8). 4422-4430 doi:10.1063/1.1505990
In(2002, October) Journal of Applied Physics Vol. 92 (8) AIP Publishing

See Also

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Ben Radhia, S., Boujdaria, K., Ridene, S., Bouchriha, H., Fishman, G. (2003) Band structures of GaAs, InAs, and Ge: A 24-k.p model. Journal of Applied Physics, 94 (9). 5726-5731 doi:10.1063/1.1614424
Boujdaria, K., Ridene, S., Radhia, S. Ben, Zitouni, O., Bouchriha, H., Fishman, G. (2002) Theoretical investigation of intersubband hole transitions in Si/SiGe/Si quantum wells. Journal of Applied Physics, 92 (5). 2586-2592 doi:10.1063/1.1497716
Saïdi, I., Ben Radhia, S., Boujdaria, K. (2008) Band structures of GaAs, InAs, and InP: A 34 k⋅p model. Journal of Applied Physics, 104 (2). 23706pp. doi:10.1063/1.2957068
Saïdi, I., Ben Radhia, S., Boujdaria, K. (2010) Band parameters of GaAs, InAs, InP, and InSb in the 40-band k⋅p model. Journal of Applied Physics, 107 (4). 43701pp. doi:10.1063/1.3295900
Ridene, S., Boujdaria, K., Bouchriha, H., Fishman, G. (2001) Infrared absorption inSi/Si1−xGex/Siquantum wells. Physical Review B, 64 (8) doi:10.1103/physrevb.64.085329
Fraj, N., Saïdi, I., Ben Radhia, S., Boujdaria, K. (2007) Band structures of AlAs, GaP, and SiGe alloys: A 30 k×p model. Journal of Applied Physics, 102 (5). 53703pp. doi:10.1063/1.2773532
Ridene, S., Debbichi, M., Ben fredj, A, Said, M., Bouchriha, H. (2008) Energy-band structure and optical gain in strained InAs(N)/GaSb/InAs(N) quantum well lasers. Journal of Applied Physics, 104 (6). 63706pp. doi:10.1063/1.2977677
Saïdi, I., Neffati, R., Ben Radhia, S., Boujdaria, K., Lemaître, A., Bernardot, F., Testelin, C. (2016) Optical properties of type-II AlInAs/AlGaAs quantum dots by photoluminescence studies. Journal of Applied Physics, 120 (3). 35701pp. doi:10.1063/1.4958867
Ben Aich, R., Ben Radhia, S., Boujdaria, K., Chamarro, M., Testelin, C. (2020) Multiband k·p Model for Tetragonal Crystals: Application to Hybrid Halide Perovskite Nanocrystals. The Journal of Physical Chemistry Letters, 11 (3). 808-817 doi:10.1021/acs.jpclett.9b02179
Boujdaria, Kaïs, Ridene, Saïd, Fishman, Guy (2001) Luttinger-like parameter calculations. Physical Review B, 63 (23) doi:10.1103/physrevb.63.235302
Ridene, S., Debbichi, M., Saïd, M., Bouchriha, H. (2012) Dependence of hole effective mass on nitrogen concentration in W-type strained InAs(N)/GaSb/InAs(N) quantum well lasers. The European Physical Journal B, 85 (1). doi:10.1140/epjb/e2011-20482-5
 
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