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Cho, Byeong-Ok, Wang, Jianjun, Chang, Jane P. (2002) Metalorganic precursor decomposition and oxidation mechanisms in plasma-enhanced ZrO2 deposition. Journal of Applied Physics, 92 (8). 4238-4244 doi:10.1063/1.1506421

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Reference TypeJournal (article/letter/editorial)
TitleMetalorganic precursor decomposition and oxidation mechanisms in plasma-enhanced ZrO2 deposition
JournalJournal of Applied Physics
AuthorsCho, Byeong-OkAuthor
Wang, JianjunAuthor
Chang, Jane P.Author
Year2002 (October 15)Volume92
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.1506421Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5117101Long-form Identifiermindat:1:5:5117101:2
GUID0
Full ReferenceCho, Byeong-Ok, Wang, Jianjun, Chang, Jane P. (2002) Metalorganic precursor decomposition and oxidation mechanisms in plasma-enhanced ZrO2 deposition. Journal of Applied Physics, 92 (8). 4238-4244 doi:10.1063/1.1506421
Plain TextCho, Byeong-Ok, Wang, Jianjun, Chang, Jane P. (2002) Metalorganic precursor decomposition and oxidation mechanisms in plasma-enhanced ZrO2 deposition. Journal of Applied Physics, 92 (8). 4238-4244 doi:10.1063/1.1506421
In(2002, October) Journal of Applied Physics Vol. 92 (8) AIP Publishing

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Cho, Byeong-Ok, Lao, Sandy X., Chang, Jane P. (2003) Origin and effect of impurity incorporation in plasma-enhanced ZrO2 deposition. Journal of Applied Physics, 93 (11). 9345-9351 doi:10.1063/1.1572193
Cho, Byeong-Ok, Wang, Jianjun, Sha, Lin, Chang, Jane P. (2002) Tuning the electrical properties of zirconium oxide thin films. Applied Physics Letters, 80 (6). 1052-1054 doi:10.1063/1.1448667
Cho, Byeong-Ok, Chang, Jane P., Min, Jae-Ho, Moon, Sang H., Kim, Yil W., Levin, Igor (2003) Material characteristics of electrically tunable zirconium oxide thin films. Journal of Applied Physics, 93 (1). 745-749 doi:10.1063/1.1525044
Han, P., Yoshida, T. (2002) Growth and transport of clusters in thermal plasma vapor deposition of silicon. Journal of Applied Physics, 92 (8). 4772-4778 doi:10.1063/1.1506396
Chang, Jane P., Lin, You-Sheng (2001) Highly conformal ZrO2 deposition for dynamic random access memory application. Journal of Applied Physics, 90 (6). 2964-2969 doi:10.1063/1.1389756
Cho, H. K., Lee, J. Y., Yang, G. M. (2002) Characterization of pit formation in III-nitrides grown by metalorganic chemical vapor deposition. Applied Physics Letters, 80 (8). 1370-1372 doi:10.1063/1.1454215
Puthenkovilakam, Ragesh, Chang, Jane P. (2004) Valence band structure and band alignment at the ZrO2/Si interface. Applied Physics Letters, 84 (8). 1353-1355 doi:10.1063/1.1650547
Kim, Yangdo, Koo, Jaehyoung, Han, Jiwoong, Choi, Sungwoo, Jeon, Hyeongtag, Park, Chan-Gyung (2002) Characteristics of ZrO2 gate dielectric deposited using Zrt–butoxide and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method. Journal of Applied Physics, 92 (9). 5443-5447 doi:10.1063/1.1513196
Setyawan, Heru, Shimada, Manabu, Okuyama, Kikuo (2002) Characterization of fine particle trapping in a plasma-enhanced chemical vapor deposition reactor. Journal of Applied Physics, 92 (9). 5525-5531 doi:10.1063/1.1501755
Ramelan, A. H., Goldys, E. M. (2002) Hole mobility in AlxGa1−xSb grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 92 (10). 6051-6056 doi:10.1063/1.1506192
Cho, Bongkee (1988) Equation of state for liquids. Journal of Applied Physics, 64 (8). 4236-4238 doi:10.1063/1.341291
 
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