Kim, Yangdo, Koo, Jaehyoung, Han, Jiwoong, Choi, Sungwoo, Jeon, Hyeongtag, Park, Chan-Gyung (2002) Characteristics of ZrO2 gate dielectric deposited using Zrt–butoxide and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method. Journal of Applied Physics, 92 (9). 5443-5447 doi:10.1063/1.1513196
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Characteristics of ZrO2 gate dielectric deposited using Zrt–butoxide and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method | ||
| Journal | Journal of Applied Physics | ||
| Authors | Kim, Yangdo | Author | |
| Koo, Jaehyoung | Author | ||
| Han, Jiwoong | Author | ||
| Choi, Sungwoo | Author | ||
| Jeon, Hyeongtag | Author | ||
| Park, Chan-Gyung | Author | ||
| Year | 2002 (November) | Volume | 92 |
| Issue | 9 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.1513196Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5117411 | Long-form Identifier | mindat:1:5:5117411:6 |
| GUID | 0 | ||
| Full Reference | Kim, Yangdo, Koo, Jaehyoung, Han, Jiwoong, Choi, Sungwoo, Jeon, Hyeongtag, Park, Chan-Gyung (2002) Characteristics of ZrO2 gate dielectric deposited using Zrt–butoxide and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method. Journal of Applied Physics, 92 (9). 5443-5447 doi:10.1063/1.1513196 | ||
| Plain Text | Kim, Yangdo, Koo, Jaehyoung, Han, Jiwoong, Choi, Sungwoo, Jeon, Hyeongtag, Park, Chan-Gyung (2002) Characteristics of ZrO2 gate dielectric deposited using Zrt–butoxide and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method. Journal of Applied Physics, 92 (9). 5443-5447 doi:10.1063/1.1513196 | ||
| In | (2002, November) Journal of Applied Physics Vol. 92 (9) AIP Publishing | ||
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