(1985) Journal of Non-Crystalline Solids Vol. 77. Elsevier BV

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Reference Type	Journal (volume)
Journal	Journal of Non-Crystalline Solids
Year	1985	Volume	< 77 >
Publisher	Elsevier BV
Mindat Ref. ID	625485	Long-form Identifier	mindat:1:5:625485:2
GUID	0
Full Reference	(1985) Journal of Non-Crystalline Solids Vol. 77. Elsevier BV
Plain Text	(1985) Journal of Non-Crystalline Solids Vol. 77. Elsevier BV
In	Elsevier BV (1968 - 2020) Journal of Non-Crystalline Solids

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	*(1985) Editorial Board. Journal of Non-Crystalline Solids, 77. doi:10.1016/0022-3093(85)90590-3*
	*Evangelisti, F., Stuke, J. (1985) Editorial. Journal of Non-Crystalline Solids, 77. doi:10.1016/0022-3093(85)90591-5*
	*(1985) List of committees. Journal of Non-Crystalline Solids, 77. doi:10.1016/0022-3093(85)90592-7*
	*(1985) N.F. Mott's honoris causa laureation. Journal of Non-Crystalline Solids, 77. doi:10.1016/0022-3093(85)90593-9*
	*(1985) Allocuzione del rettore magnifico. Journal of Non-Crystalline Solids, 77. doi:10.1016/0022-3093(85)90594-0*
	*(1985) Rector's address. Journal of Non-Crystalline Solids, 77. doi:10.1016/0022-3093(85)90595-2*
	*(1985) Allocuzione del preside di facolta'. Journal of Non-Crystalline Solids, 77. doi:10.1016/0022-3093(85)90596-4*
	*(1985) Faculty head's address. Journal of Non-Crystalline Solids, 77. doi:10.1016/0022-3093(85)90597-6*
	*(1985) Discorso di accoglimento. Journal of Non-Crystalline Solids, 77. doi:10.1016/0022-3093(85)90598-8*
	*(1985) Author index. Journal of Non-Crystalline Solids, 77. doi:10.1016/0022-3093(85)90765-3*
	*(1985) Subject index. Journal of Non-Crystalline Solids, 77. doi:10.1016/0022-3093(85)90766-5*
	*(1985) Contents Parts I and II. Journal of Non-Crystalline Solids, 77. doi:10.1016/0022-3093(85)90767-7*
	*Street, R.A. (1985) Localized states in doped amorphous silicon. Journal of Non-Crystalline Solids, 77. 1-16 doi:10.1016/0022-3093(85)90599-x*
	Moullet, I., Maschke, K., Kunz, H. (1985) Phase correlations of localized electronic wave functions in disordered one- and two-dimensional systems. Journal of Non-Crystalline Solids, 77. 17-20 doi:10.1016/0022-3093(85)90600-3
	*Shinozuka, Yuzo (1985) Self-shrinking of electronic states below the mobility edge in disordered semiconductors. Journal of Non-Crystalline Solids, 77. 21-24 doi:10.1016/0022-3093(85)90601-5*
	*Castellani, Claudio, Di Castro, Carlo (1985) Metal-insulator transition in disordered systems. Journal of Non-Crystalline Solids, 77. 25-28 doi:10.1016/0022-3093(85)90602-7*
	Bulka, Bogdan, Kramer, Bernhard, Schweitzer, Ludwig (1985) Electron localisation near the mobility edge in the Anderson model. Journal of Non-Crystalline Solids, 77. 29-32 doi:10.1016/0022-3093(85)90603-9
	*Pollak, M., Ortuño, M. (1985) The effect of Coulomb interactions on Anderson localization. Journal of Non-Crystalline Solids, 77. 33-36 doi:10.1016/0022-3093(85)90604-0*
	*Robertson, J. (1985) Theory of defects in amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 37-46 doi:10.1016/0022-3093(85)90605-2*
	*Soukoulis, C.M., Cohen, M.H., Economou, E.N., Zdetsis, A.D. (1985) Electronic structure at band edges. Journal of Non-Crystalline Solids, 77. 47-50 doi:10.1016/0022-3093(85)90606-4*
	Latge, Andrea, Makler, Sergio S., Anda, Enrique V. (1985) Electronic properties of amorphous semiconductors: Topology lattice effects. Journal of Non-Crystalline Solids, 77. 51-54 doi:10.1016/0022-3093(85)90607-6
	*Hayes, T.M., Beeby, J.L. (1985) Calculating the electronic properties of amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 55-56 doi:10.1016/0022-3093(85)90608-8*
	Hayes, T.M., Allen, J.W., Beeby, J.L., Oh, S.-J. (1985) Are odd-membered rings responsible for differences between the valence bands of crystalline and amorphous silicon?. Journal of Non-Crystalline Solids, 77. 57-58 doi:10.1016/0022-3093(85)90609-x
	*Johnston, Robert, Kramer, Bernhard (1985) New model for the electronic properties of amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 59-62 doi:10.1016/0022-3093(85)90610-6*
	Díaz, G., Martínez, E., Ynduráin, Felex (1985) First principles calculation of the electronic structure of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 77. 63-66 doi:10.1016/0022-3093(85)90611-8
	*Hickey, B.J, Morgan, G.J, Weaire, D.L, Wooten, F (1985) The density of states in amorphous Si. Journal of Non-Crystalline Solids, 77. 67-70 doi:10.1016/0022-3093(85)90612-x*
	*Grigorovici, Radu, Gartner, Paul (1985) Hybrid SPD bonds in semiconducting amorphous elements. Journal of Non-Crystalline Solids, 77. 71-74 doi:10.1016/0022-3093(85)90613-1*
	*Agrawal, Bal K, Agrawal, Savitri (1985) Electronic structure of pure and fluorinated silane chains. Journal of Non-Crystalline Solids, 77. 75-78 doi:10.1016/0022-3093(85)90614-3*
	*Agrawal, Bal K., Agrawal, Savitri (1985) Electronic structure of a-Ge:F:H alloys. Journal of Non-Crystalline Solids, 77. 79-82 doi:10.1016/0022-3093(85)90615-5*
	*O'Reilly, E.P., Robertson, J., Beeman, D. (1985) Electronic structure of amorphous carbon. Journal of Non-Crystalline Solids, 77. 83-86 doi:10.1016/0022-3093(85)90616-7*
	Mašek, Jan, Drchal, Václav, Málek, Jiří, Velický, Bedřich, Wilke, Steffen (1985) Local environment effects in electronic structure: a-GeS contrasted to a-SiHx. Journal of Non-Crystalline Solids, 77. 87-90 doi:10.1016/0022-3093(85)90617-9
	*Verges, J.A. (1985) Electronic and structural properties of amorphous Si1−xAlx. Journal of Non-Crystalline Solids, 77. 91-94 doi:10.1016/0022-3093(85)90618-0*
	*Tarnow, Eugene, Antonelli, Alex, Joannopoulos, J.D. (1985) Ground state properties of crystalline As2Se3. Journal of Non-Crystalline Solids, 77. 95-98 doi:10.1016/0022-3093(85)90619-2*
	*Bar-Yam, Y., Joannopoulos, J.D. (1985) Correlation energy of deep level traps in a-Si:H. Journal of Non-Crystalline Solids, 77. 99-102 doi:10.1016/0022-3093(85)90620-9*
	*Guo-Cai, Dai, Da-Ren, Guan, Cong-Hao, Deng (1985) A hydrogen-related complex defect model in a-Si:H. Journal of Non-Crystalline Solids, 77. 103-106 doi:10.1016/0022-3093(85)90621-0*
	Zygmunt, S.A., Eberhart, M.E., Johnson, K.H., Adler, D. (1985) Planar ring structures in hydrogenated amorphous silicon: A new model for the Staebler-Wronski effect. Journal of Non-Crystalline Solids, 77. 107-110 doi:10.1016/0022-3093(85)90622-2
	Viščor, Petr (1985) The absence of exchange or motional narrowing of E.S.R. absorption lines, the spatial extend of the localised paramagnetic centres and the role played by the charge-lattice interaction in amorphous semiconductors without and with hydrogen. Journal of Non-Crystalline Solids, 77. 111-114 doi:10.1016/0022-3093(85)90623-4
	*Mott, N.F (1985) Pre-exponential factor in the conductivity of liquid and amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 115-120 doi:10.1016/0022-3093(85)90624-6*
	*Thomas, P (1985) DC-transport in amorphous semiconductors — phonon induced delocalization. Journal of Non-Crystalline Solids, 77. 121-130 doi:10.1016/0022-3093(85)90625-8*
	*Pollak, Michael, Hunt, Allen G. (1985) Ultra-slow processes in disordered insulators. Journal of Non-Crystalline Solids, 77. 131-134 doi:10.1016/0022-3093(85)90626-x*
	*Summerfield, S, Butcher, P.N (1985) Universal behaviour of AC hopping conductivity in disordered systems. Journal of Non-Crystalline Solids, 77. 135-138 doi:10.1016/0022-3093(85)90627-1*
	*Shapiro, Finley R, Adler, David (1985) Electrical conductivity and thermoelectric power in amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 139-142 doi:10.1016/0022-3093(85)90628-3*
	*Overhof, Harald (1985) The field dependence of the dc current in amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 143-146 doi:10.1016/0022-3093(85)90629-5*
	*Economou, E.N., Zdetsis, A.D., Papaconstantopoulos, D.A. (1985) Calculation of physical quantities in α-SiHx. Journal of Non-Crystalline Solids, 77. 147-150 doi:10.1016/0022-3093(85)90630-1*
	*Economou, E.N., Cohen, M.H., Soukoulis, C.M. (1985) DC transport in amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 151-154 doi:10.1016/0022-3093(85)90631-3*
	*Dersch, U. (1985) A Bethe-lattice approach to activated transport in amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 155-158 doi:10.1016/0022-3093(85)90632-5*
	Viščor, Petr (1985) The thickness dependence of the d.c. electrical conductivity and the variable range hopping in group IV amorphous elemental semiconductors. Journal of Non-Crystalline Solids, 77. 159-162 doi:10.1016/0022-3093(85)90633-7
	Grünewald, M., Movaghar, B., Pohlmann, B., Würtz, D. (1985) Dispersive band tail relaxation in amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 163-166 doi:10.1016/0022-3093(85)90634-9
	*Stumpe, R. (1985) On dielectric relaxation in inhomogeneous systems. Journal of Non-Crystalline Solids, 77. 167-170 doi:10.1016/0022-3093(85)90635-0*
	*Cohen, M.H., Soukoulis, C.M., Economou, E.N. (1985) Optical absorption in amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 171-174 doi:10.1016/0022-3093(85)90636-2*
	*Grünewald, M., Thomas, P. (1985) A new theory of optical absorption in amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 175-178 doi:10.1016/0022-3093(85)90637-4*
	*Mosseri, R., Sadoc, J.F. (1985) Curved space model of amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 179-190 doi:10.1016/0022-3093(85)90638-6*
	*Lamonte, Bernard (1985) States of bonded hydrogen in a-Si:H. Journal of Non-Crystalline Solids, 77. 191-199 doi:10.1016/0022-3093(85)90639-8*
	*Chabal, Y.J, Patel, C.K.N (1985) Effects of high pressure molecular hydrogen in a-Si:H. Journal of Non-Crystalline Solids, 77. 201-212 doi:10.1016/0022-3093(85)90640-4*
	Bellissent, Robert, Chenevas-Paule, André, Chieux, Pierre, Menelle, Alain (1985) aSi:H short range order by neutron scattering. Journal of Non-Crystalline Solids, 77. 213-216 doi:10.1016/0022-3093(85)90641-6
	Craven, A.J., Patterson, A.M., Long, A.R., Wilson, J.I.B. (1985) Small angle electron scattering in aSi and aSi:H films. Journal of Non-Crystalline Solids, 77. 217-220 doi:10.1016/0022-3093(85)90642-8
	Jung, Ai-Lien, Shi, Li-Qing, Liu, Gang, Xiong, Jia-Jiong, Song Cao, Bi, Yu, Wei-Zhong, Jiang, Hui-Lin, Song, Jian-Zhong, Long, Kang, Adler, David (1985) Positron-annihilation study of the structure of pure and hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 77. 221-224 doi:10.1016/0022-3093(85)90643-x
	*Zentai, Gy., Füstöss-Wégner, M. (1985) Microinhomogeneities in glow discharge deposited aSi:H layers. Journal of Non-Crystalline Solids, 77. 225-228 doi:10.1016/0022-3093(85)90644-1*
	Bellissent, Robert, Menelle, Alain, Belin, Esther, Dixmier, Jean (1985) Observation of a polymer like short range order in aGe1−x:Hx by X-Ray and neutron scattering. Journal of Non-Crystalline Solids, 77. 229-232 doi:10.1016/0022-3093(85)90645-3
	Manaila, Rodica, Macovei, Dan, Pausescu, Paula, Grigorovici, Radu (1985) Chemical bonding in amorphous and crystalline Ge from EXAFS phase shifts. Journal of Non-Crystalline Solids, 77. 233-236 doi:10.1016/0022-3093(85)90646-5
	Sayers, D.E., Paesler, M.A., Morrison, T.I., Lorentz, R.D., Gonzalez-Hernandez, J. (1985) Spectroscopic studies of annealed aGe: probing an “ideal” random system. Journal of Non-Crystalline Solids, 77. 237-240 doi:10.1016/0022-3093(85)90647-7
	*DiVincenzo, D.P., Brodsky, M.H. (1985) Polytope-like order in random network models of amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 241-244 doi:10.1016/0022-3093(85)90648-9*
	Kumagai, Yoshiaki, Takano, Yoshiki, Yokohama, Takahiro, Ozaki, Hajime, Mori, Natsuki (1985) XPS study of the incorporation scheme of Cu atoms in a-Ge. Journal of Non-Crystalline Solids, 77. 245-248 doi:10.1016/0022-3093(85)90649-0
	Mosley, L.E., Paesler, M.A., Lucovsky, G., Musameh, S., Waltner, A., Wortman, J.J. (1985) Reversible metastable configurations in amorphous silicon. Journal of Non-Crystalline Solids, 77. 249-252 doi:10.1016/0022-3093(85)90650-7
	Furukawa, Shoji, Matsumoto, Nobuo, Takeda, Kyozaburo (1985) Structure and band models for wide optical gap polysilane alloys. Journal of Non-Crystalline Solids, 77. 253-256 doi:10.1016/0022-3093(85)90651-9
	Nitta, S., Kawai, M., Murase, I., Sakaida, M. (1985) Structural and electronic properties of quasi-one dimensional hydrogenated amorphous silicon films. Journal of Non-Crystalline Solids, 77. 257-260 doi:10.1016/0022-3093(85)90652-0
	Weil, R., Abdulhalim, I., Beserman, R., Janai, M., Pratt, B. (1985) Comparison of strain in glow discharge a-Si:F and a-Si:H. Journal of Non-Crystalline Solids, 77. 261-264 doi:10.1016/0022-3093(85)90653-2
	*Boyce, J.B., Stutzmann, M., Ready, S.E. (1985) Molecular hydrogen in amorphous Si: NMR studies. Journal of Non-Crystalline Solids, 77. 265-268 doi:10.1016/0022-3093(85)90654-4*
	Demichelis, F., Mezzetti, E., Rava, P., Tagliaferro, A., Tresso, E., Della Mea, G.A., Mazzoldi, P. (1985) Influence of the hydrogen content on the physical properties of magnetron sputtered amorphous silicon. Journal of Non-Crystalline Solids, 77. 269-272 doi:10.1016/0022-3093(85)90655-6
	*Fritzsche, H. (1985) Density-of-states distribution in the mobility gap of a-Si:H. Journal of Non-Crystalline Solids, 77. 273-280 doi:10.1016/0022-3093(85)90656-8*
	Jackson, W.B, Tsai, C.C, Kelso, S.M (1985) Implications of recent density-of-states measurements for optical and transport properties of a-Si:H. Journal of Non-Crystalline Solids, 77. 281-290 doi:10.1016/0022-3093(85)90657-x
	Gelatos, Avgerinos V., David Cohen, J., Harbison, James P. (1985) Correlation of optical and thermal emission from mobility GAP states in doped hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 77. 291-294 doi:10.1016/0022-3093(85)90658-1
	Bustarret, E., Jousse, D., Chaussat, C., Boulitrop, F. (1985) On the interpretation of sub-bandgap optical absorption in a-Si:H. Journal of Non-Crystalline Solids, 77. 295-298 doi:10.1016/0022-3093(85)90659-3
	Vaněček, M., Stuchlík, J., Kočka, J., Tříska, A. (1985) Determination of the mobility gap in amorphous silicon from a low temperature photoconductivity measurement. Journal of Non-Crystalline Solids, 77. 299-302 doi:10.1016/0022-3093(85)90660-x
	Augelli, Vincenzo, Dilecce, Giorgio, Murri, Roberto, Schiavulli, Luigi (1985) Field effect measurements in hydrogenated and chlorinated amorphous silicon films. Journal of Non-Crystalline Solids, 77. 303-306 doi:10.1016/0022-3093(85)90661-1
	Mostefaoui, R., Chevallier, J., Meichenin, S., Auzel, F. (1985) Gap-state absorption in hydrogenated and chlorinated amorphous silicon films by photothermal deflection spectroscopy. Journal of Non-Crystalline Solids, 77. 307-310 doi:10.1016/0022-3093(85)90662-3
	Šmíd, Václav, Mareš, Jiří, Dung, Nguyen M., Štourač, Ladislav, Krištofik, Jozef (1985) The role of interface states in the evaluation of density of states from field effect measurements in dc-sputtered a-Si:H. Journal of Non-Crystalline Solids, 77. 311-314 doi:10.1016/0022-3093(85)90663-5
	Onuki, Masami, Matsunaga, Hiroshi, Kubota, Hiroshi (1985) Amplitude and phase of transient AC photocurrent of a-Si:H pin+ diode under infrared illumination. Journal of Non-Crystalline Solids, 77. 315-318 doi:10.1016/0022-3093(85)90664-7
	Mencaraglia, D., Kleider, J.P., Baixeras, J. (1985) Hydrogen influence on the optoelectronic properties of triode dc sputtered amorphous silicon: Disorder effects on deep gap states characteristics. Journal of Non-Crystalline Solids, 77. 319-322 doi:10.1016/0022-3093(85)90665-9
	*Balberg, I., Gal, E. (1985) Capacitance spectroscopy of a-Si:H. Journal of Non-Crystalline Solids, 77. 323-326 doi:10.1016/0022-3093(85)90666-0*
	Krieger, George, Gangopadhyay, Shubhra, Rübel, Herbert, Schröder, Bernd, Geiger, Jürgen (1985) Density of states study of magnetron-sputtered a-Si:H by capacitance and space-charge-limited current (SCLC) measurements. Journal of Non-Crystalline Solids, 77. 327-330 doi:10.1016/0022-3093(85)90667-2
	Belin, E., Cardinaud, C., Senemaud, C., Dixmier, J. (1985) X-ray absorption spectroscopy study of Ge empty states in crystalline and amorphous phases, amorphous Ge:H and Si1−xGex:H. Journal of Non-Crystalline Solids, 77. 331-334 doi:10.1016/0022-3093(85)90668-4
	Johnson, N.M, Jackson, W.B (1985) Energy placement of the D− dangling-bond transition in a-Si:H from photocapacitance and photocurrent spectroscopies. Journal of Non-Crystalline Solids, 77. 335-338 doi:10.1016/0022-3093(85)90669-6
	*Yamasaki, S., Kuroda, S., Okushi, H., Tanaka, K. (1985) Energy location of ESR hyperfine centers of P-doped a-Si:H. Journal of Non-Crystalline Solids, 77. 339-342 doi:10.1016/0022-3093(85)90670-2*
	Kida, Hirotsugu, Hattori, Kiminori, Okamoto, Hiroaki, Hamakawa, Yoshihiro (1985) Deep states distribution in undoped amorphous silicon studied by current transient spectroscopy. Journal of Non-Crystalline Solids, 77. 343-346 doi:10.1016/0022-3093(85)90671-4
	*Manfredotti, C., Montaldi, L., Galassini, S. (1985) Analysis of SCLC curves in a-Si:H by a new direct method. Journal of Non-Crystalline Solids, 77. 347-350 doi:10.1016/0022-3093(85)90672-6*
	Halpern, V. (1985) The density of localised states relevant to different properties of inhomogeneous amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 351-354 doi:10.1016/0022-3093(85)90673-8
	Su, Zi-Min, Peng, Shao-Qi (1985) Internal photoemission transient current temperature spectroscopy — a new method for determination of the gao state distribution in a-Si:H. Journal of Non-Crystalline Solids, 77. 355-358 doi:10.1016/0022-3093(85)90674-x
	Imagawa, O, Iwanishi, M, Yokoyama, S, Shimakawa, K (1985) Electrophotographic spectroscopy of gap states in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 77. 359-362 doi:10.1016/0022-3093(85)90675-1
	Stutzmann, Martin, Jackson, Warren B., Tsai, Chuang Chuang (1985) Light-induced metastable defects in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 77. 363-372 doi:10.1016/0022-3093(85)90676-3
	Chenevas-Paule, André, Bellissent, Robert, Roth, Michel, Pankove, Jacques I. (1985) Correlation between staebler wronski effect and medium range order in a-Si:H by sans. Journal of Non-Crystalline Solids, 77. 373-376 doi:10.1016/0022-3093(85)90677-5
	Shimizu, Tatsuo, Kumeda, Minoru, Morimoto, Akiharu, Yokomichi, Haruo, Ishii, Nobuhiko (1985) Photo-created defects in Si-based amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 377-380 doi:10.1016/0022-3093(85)90678-7
	*Zellama, Kacem, Cohen, J.David, Walsh, Thomas (1985) Capacitance studies of light induced effects in undoped a-Si:H. Journal of Non-Crystalline Solids, 77. 381-384 doi:10.1016/0022-3093(85)90679-9*
	Kočka, J., Štika, O., Vaněček, M., Tříska, A., Schauer, F., Zmeškal, O. (1985) Temperature modulated-SCLC, used for the study of the light induced, metastable density of states of a-Si:H. Journal of Non-Crystalline Solids, 77. 385-388 doi:10.1016/0022-3093(85)90680-5
	*Mosley, L.E., Paesler, M.A., Shimizu, I. (1985) Microscopic model of the staebler-wronski effect. Journal of Non-Crystalline Solids, 77. 389-392 doi:10.1016/0022-3093(85)90681-7*
	Lee, Choochon, Yoon, Jong-Hwan, Jang, Jin (1985) Light-induced effects in hydrogenated amorphous silicon at low temperatures. Journal of Non-Crystalline Solids, 77. 393-396 doi:10.1016/0022-3093(85)90682-9
	Glade, A, Beichler, J, Mell, H (1985) Temperature dependent creation of light-induced defects in a-Si:H Schottky barrier diodes. Journal of Non-Crystalline Solids, 77. 397-400 doi:10.1016/0022-3093(85)90683-0
	Ohsawa, M., Hama, T., Ichimura, T., Akasaka, T., Sakai, H., Ishida, S., Uchida, Y. (1985) Effects of deposition temperature and hydrogen evolution on light-induced defects in a-Si:H. Journal of Non-Crystalline Solids, 77. 401-404 doi:10.1016/0022-3093(85)90684-2
	*Benyuan, Gu, Daxing, Han, Chenxi, Li (1985) Kinetic behaviors of the time-dependence of photoconductivity in a-Si:H. Journal of Non-Crystalline Solids, 77. 405-408 doi:10.1016/0022-3093(85)90685-4*
	*McMahon, T.J, Xi, J.P (1985) Light induced change in a-Si:H material and P-I-N devices. Journal of Non-Crystalline Solids, 77. 409-412 doi:10.1016/0022-3093(85)90686-6*
	Yamagishi, H., Kida, H., Kamada, T., Tagliaferro, A., Okamoto, H., Hamakawa, Y. (1985) Analysis of light and current induced effects on μτ product and localized electronic states in a-Si:H. Journal of Non-Crystalline Solids, 77. 413-416 doi:10.1016/0022-3093(85)90687-8
	Mori, Kohji, Ohta, Eiichi, Ino, Masumitsu, Tani, Katsuhiko (1985) Degradation of photoresponse time of a-Si:H and correlation with NI measured by low frequency C-V method. Journal of Non-Crystalline Solids, 77. 417-420 doi:10.1016/0022-3093(85)90688-x
	Sato, Kazuhiko, Ishihara, Takashi, Usui, Masaaki, Okaniwa, Kazuhiro, Sasaki, Hajime, Nakamura, Genshiro, Yukimoto, Yoshinori (1985) Photo induced effects on a-Si1−xGex:H films. Journal of Non-Crystalline Solids, 77. 421-424 doi:10.1016/0022-3093(85)90689-1
	*Marshall, J.M. (1985) Excess carrier thermalisation phenomena in amorphous materials and devices. Journal of Non-Crystalline Solids, 77. 425-434 doi:10.1016/0022-3093(85)90690-8*
	*Müller, G., Mannsperger, H., Kalbitzer, S. (1985) On the auto-compensation mechanism in amorphous silicon. Journal of Non-Crystalline Solids, 77. 435-438 doi:10.1016/0022-3093(85)90691-x*
	*Orlowski, T.E, Abkowitz, M (1985) Subnanosecond transient photocurrents in a-Se and a-Si:H. Journal of Non-Crystalline Solids, 77. 439-442 doi:10.1016/0022-3093(85)90692-1*
	*Leroux, T., Chenevas-Paule, A. (1985) Anderson transition in accumulation layer of a-Si:H thin film transistor. Journal of Non-Crystalline Solids, 77. 443-446 doi:10.1016/0022-3093(85)90693-3*
	Yamaguchi, M., Takada, J., Hosokawa, Y., Tawada, Y. (1985) The study of carrier transport in thin a-SiH films by the aid of transient and steady-state photocurrent measurement. Journal of Non-Crystalline Solids, 77. 447-450 doi:10.1016/0022-3093(85)90694-5
	*Snow, Eric, Silver, M. (1985) Transient single-carrier injection currents in a-Si:H. Journal of Non-Crystalline Solids, 77. 451-454 doi:10.1016/0022-3093(85)90695-7*
	*Silver, M., Snow, E., Adler, D. (1985) Validity of the thermalization approximation in amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 455-458 doi:10.1016/0022-3093(85)90696-9*
	*Shirafuji, Junji, Shirakawa, Kazuhiro (1985) Hole transport in boron-compensated a-Si:H films. Journal of Non-Crystalline Solids, 77. 459-462 doi:10.1016/0022-3093(85)90697-0*
	*Michiel, H., Davis, E.A., Adriaenssens, G.J. (1985) Tail-state distribution and extended-state mobility in a-Si:H. Journal of Non-Crystalline Solids, 77. 463-466 doi:10.1016/0022-3093(85)90698-2*
	*Long, A.R., McMillan, J. (1985) The effect of magnetic field on the frequency dependent loss in amorphous silicon. Journal of Non-Crystalline Solids, 77. 467-470 doi:10.1016/0022-3093(85)90699-4*
	*Long, A.R., Holland, M.C. (1985) Optically induced frequency dependent loss in AGE and ASI. Journal of Non-Crystalline Solids, 77. 471-474 doi:10.1016/0022-3093(85)90700-8*
	*Summerfield, S, Butcher, P.N, Long, A.R (1985) The role of hydrogen on fermi level hopping in a-Ge. Journal of Non-Crystalline Solids, 77. 475-478 doi:10.1016/0022-3093(85)90701-x*
	Allone, G., De Luca, L., Grasso, V., Neri, F. (1985) Transport properties of doped a-Si:H films prepared by reactive evaporation. Journal of Non-Crystalline Solids, 77. 479-482 doi:10.1016/0022-3093(85)90702-1
	Bhattacharya, Enakshi, Narasimhan, K.L., Bapat, D.R. (1985) Space charge limited currents and the statistical shift in amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 483-486 doi:10.1016/0022-3093(85)90703-3
	*Kun-ji, Chen, Guang-hou, Wang (1985) The effect of electron radiation damage on transport properties of a-Si:H. Journal of Non-Crystalline Solids, 77. 487-490 doi:10.1016/0022-3093(85)90704-5*
	den Boer, Willem, Hack, Michael (1985) A comparative study of single and double carrier injection in amorphous silicon alloys. Journal of Non-Crystalline Solids, 77. 491-494 doi:10.1016/0022-3093(85)90705-7
	Heintze, M, Spear, W.E (1985) The effects of linear strain on the electronic properties of glow discharge amorphous silicon. Journal of Non-Crystalline Solids, 77. 495-498 doi:10.1016/0022-3093(85)90706-9
	*D'Amico, Arnaldo, Fortunato, Guglielmo, van Vliet, C.M (1985) Noise measurements in thin films of amorphous silicon. Journal of Non-Crystalline Solids, 77. 499-502 doi:10.1016/0022-3093(85)90707-0*
	Bilger, G, Nebel, C.E, Bauer, G.H, Mohring, H.-D (1985) Boron diffusion in amorphous silicon analized by SIMS and temperature dependent conductivity. Journal of Non-Crystalline Solids, 77. 503-506 doi:10.1016/0022-3093(85)90708-2
	Bertolotti, M., Ferrari, A., Proietti, M.G., Fiorini, P., Evangelisti, F. (1985) Conductivity and photoconductivity of n-doped hydrogenated amorphous silicon treated with a CO2 laser. Journal of Non-Crystalline Solids, 77. 507-510 doi:10.1016/0022-3093(85)90709-4
	Schropp, R.E.I., Brouwer, G.J.M., Verwey, J.F. (1985) The determination of characteristic parameters by the temperature dependent field-effect in a-Si:H thin film transistors. Journal of Non-Crystalline Solids, 77. 511-514 doi:10.1016/0022-3093(85)90710-0
	*Overhof, H. (1985) Transport in hydrogenated amorphous germanium. Journal of Non-Crystalline Solids, 77. 515-518 doi:10.1016/0022-3093(85)90711-2*
	Hirabayashi, I., Morigaki, K., Nitta, S. (1985) Defect creation associated with phosphorus doping as elucidated by photoinduced absorption, photoinduced absorption detected ESR and ODMR. Journal of Non-Crystalline Solids, 77. 519-522 doi:10.1016/0022-3093(85)90712-4
	Burnett, J.H., Sun, Z.L., Mackenzie, K.D., Li, Y.M., Eggert, J.R., Paul, W. (1985) Neutron transmutation doping of a-Si:H. Journal of Non-Crystalline Solids, 77. 523-526 doi:10.1016/0022-3093(85)90713-6
	Alvarez, F., Chambouleyron, I., Gobbi, A., Mendonça, C., Castro, F.L. (1985) On the influence of an external D.C. substrate bias on boron and phosphorus doping efficiencies in a-Si:H. Journal of Non-Crystalline Solids, 77. 527-530 doi:10.1016/0022-3093(85)90714-8
	Siefert, Jean-Marie, de Rosny, Gilles (1985) In situ measurements of the Fermi level position in undoped and doped a-Si:H films. Journal of Non-Crystalline Solids, 77. 531-534 doi:10.1016/0022-3093(85)90715-x
	*Yamaguchi, Masaaki (1985) Electrical conductivity of hydrogenated amorphous silicon alloy films. Journal of Non-Crystalline Solids, 77. 535-538 doi:10.1016/0022-3093(85)90716-1*
	*Beretta, S, Frova, A, Selloni, A (1985) Optical parameters of hydrogenated A-silicon and alloys near the gap. Journal of Non-Crystalline Solids, 77. 539-542 doi:10.1016/0022-3093(85)90717-3*
	Gal, M, Ranganathan, R, Taylor, P.C (1985) Temperature dependence of the optical absorption below the band edge in thin films of a-Si:H. Journal of Non-Crystalline Solids, 77. 543-546 doi:10.1016/0022-3093(85)90718-5
	*Pierz, K, Mell, H, Terukov, J (1985) Subbandgap absorption in a-Si:H from photoconductivity spectra. Journal of Non-Crystalline Solids, 77. 547-550 doi:10.1016/0022-3093(85)90719-7*
	Roberts, Dale M., Palmer, Joseph F., Gustafson, Terry L. (1985) Picosecond to microsecond decay of photoinduced absorption in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 77. 551-554 doi:10.1016/0022-3093(85)90720-3
	Fortunato, Guglielmo, Bruno, Franco, D'Amico, Arnaldo (1985) On the correlation between the optical gap and the slope of the “power law” absorption region in sputtered a-Si:H. Journal of Non-Crystalline Solids, 77. 555-558 doi:10.1016/0022-3093(85)90721-5
	*Eggert, J.R., Paul, W. (1985) Midgap electroabsorption in amorphous silicon-based schottky diodes. Journal of Non-Crystalline Solids, 77. 559-562 doi:10.1016/0022-3093(85)90722-7*
	*Olszakier, M., Vardeny, Z., Weil, R. (1985) Photomodulation spectroscopy of tail states in a-Si:H. Journal of Non-Crystalline Solids, 77. 563-566 doi:10.1016/0022-3093(85)90723-9*
	*Dauwen, J., Grevendonk, W. (1985) An energy gap of a-Si:H, determined from faraday-rotation experiments. Journal of Non-Crystalline Solids, 77. 567-570 doi:10.1016/0022-3093(85)90724-0*
	*Mescheder, U., Weiser, G. (1985) Optical study of space charge injection in plasma deposited a-Si:H. Journal of Non-Crystalline Solids, 77. 571-574 doi:10.1016/0022-3093(85)90725-2*
	Manfredotti, C., Scarano, G., Della Mea, G., Rossi Alvarez, C. (1985) Hydrogen content and optical properties of LPCVD amorphous silicon films. Journal of Non-Crystalline Solids, 77. 575-578 doi:10.1016/0022-3093(85)90726-4
	*Payson, J.Scott, Ross, Randall C (1985) Optical and electronic properties of plasma deposited a-Ge:H. Journal of Non-Crystalline Solids, 77. 579-582 doi:10.1016/0022-3093(85)90727-6*
	*Morigaki, K. (1985) Recombination mechanisms in amorphous semiconductors deduced from resonance measurements. Journal of Non-Crystalline Solids, 77. 583-592 doi:10.1016/0022-3093(85)90728-8*
	*Fuhs, W. (1985) Recombination of trapped carriers in a-Si:H probed by subbandgap excitation. Journal of Non-Crystalline Solids, 77. 593-602 doi:10.1016/0022-3093(85)90729-x*
	Tajima, M, Yamasaki, S, Okushi, H, Tanaka, K (1985) Direct evidence for strong electron-phonon interaction on deep trapping process in P-doped a-Si:H. Journal of Non-Crystalline Solids, 77. 603-606 doi:10.1016/0022-3093(85)90730-6
	*Spear, W.E, Hourd, A.C, Kinmond, S (1985) The temperature dependence of the D° and D+ capture cross-section in a-Si. Journal of Non-Crystalline Solids, 77. 607-610 doi:10.1016/0022-3093(85)90731-8*
	*Kristensen, I.K., Hvam, J.M. (1985) Carrier relaxation in amorphous silicon with optical bias. Journal of Non-Crystalline Solids, 77. 611-614 doi:10.1016/0022-3093(85)90732-x*
	*Dersch, Helmut, Amer, Nabil M. (1985) Evidence for room temperature tunneling recombination in amorphous silicon. Journal of Non-Crystalline Solids, 77. 615-618 doi:10.1016/0022-3093(85)90733-1*
	*Yoshida, Mihoko, Morigaki, Kazuo (1985) Time-resolved optically detected magnetic resonance in a-Si:H. Journal of Non-Crystalline Solids, 77. 619-622 doi:10.1016/0022-3093(85)90734-3*
	*Pandya, R, Schiff, E.A (1985) Recombination processes and optical bias in undoped a-Si:H. Journal of Non-Crystalline Solids, 77. 623-626 doi:10.1016/0022-3093(85)90735-5*
	Jousse, D, Chaussat, C, Vaillant, F, Bruyere, J.C, Lesimple, F (1985) Photoconductivity of lightly boron doped a-Si:H. Journal of Non-Crystalline Solids, 77. 627-630 doi:10.1016/0022-3093(85)90736-7
	Kunst, Marinus, Werner, André (1985) Charge carrier decay processes in a-Si:H studied with transient photoconductivity techniques. Journal of Non-Crystalline Solids, 77. 631-634 doi:10.1016/0022-3093(85)90737-9
	*Street, R.A. (1985) Transient photoconductivity in a-Si:H. Journal of Non-Crystalline Solids, 77. 635-638 doi:10.1016/0022-3093(85)90738-0*
	Zeldov, E., Viturro, R.E., Weiser, K. (1985) Dependence of photoconductivity and photoabsorption on H content in a-Si:H films. Journal of Non-Crystalline Solids, 77. 639-642 doi:10.1016/0022-3093(85)90739-2
	*Könenkamp, Rolf (1985) Trapping and recombination kinetics in a-Si:H thin films. Journal of Non-Crystalline Solids, 77. 643-646 doi:10.1016/0022-3093(85)90740-9*
	Stutzmann, Martin, Biegelsen, David K., Street, Robert A. (1985) Dopant states and recombination in compensated a-Si:H. Journal of Non-Crystalline Solids, 77. 647-650 doi:10.1016/0022-3093(85)90741-0
	Dersch, Helmut, Skumanich, Andrew, Amer, Nabil M. (1985) Influence of dangling bond defects on recombination in a-Si:H. Journal of Non-Crystalline Solids, 77. 651-654 doi:10.1016/0022-3093(85)90742-2
	Takenaka, Hisashi, Ogihara, Chisato, Morigaki, Kazuo (1985) Conduction band tail electrons and a centres in a-Si:H as elucidated by time-resolved optically detected magnetic resonance measurements. Journal of Non-Crystalline Solids, 77. 655-658 doi:10.1016/0022-3093(85)90743-4
	*Carius, R, Fuhs, W (1985) Non-equilibrium carriers in a-Si:H studied by electron spin resonance and IR-excitation. Journal of Non-Crystalline Solids, 77. 659-662 doi:10.1016/0022-3093(85)90744-6*
	*Boulitrop, F., Dunstan, D.J. (1985) Temperature dependence of carrier lifetimes in a-Si:H. Journal of Non-Crystalline Solids, 77. 663-666 doi:10.1016/0022-3093(85)90745-8*
	*Dunstan, D.J., Merk, E. (1985) Bias excitation and recombination kinetics in a-Si:H. Journal of Non-Crystalline Solids, 77. 667-670 doi:10.1016/0022-3093(85)90746-x*
	Al-Dallal, Shawqi (1985) Correlation between photoconductivity kinetics and infrared spectra in hydrogenated and chlorinated amorphous silicon. Journal of Non-Crystalline Solids, 77. 671-674 doi:10.1016/0022-3093(85)90747-1
	Augelli, Vincenzo, Kiess, Helmut, Murri, Roberto (1985) On the influence of the deposition conditions on the carrier lifetime in hydrogenated and chlorinated silicon films. Journal of Non-Crystalline Solids, 77. 675-678 doi:10.1016/0022-3093(85)90748-3
	*Hallerdt, Martin, Solomon, Ionel, Tran-Quoc, Hai (1985) Very long-lived traps in bulk hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 77. 679-682 doi:10.1016/0022-3093(85)90749-5*
	*Hamdi, H., Deneuville, A., Bustarret, E. (1985) Trap parameters in undoped sputtered a-Si:H from TSC. Journal of Non-Crystalline Solids, 77. 683-686 doi:10.1016/0022-3093(85)90750-1*
	*Maschke, K., Merk, E., Czaja, W. (1985) An extended multiple-trapping model for the photoluminescence in a-Si:H. Journal of Non-Crystalline Solids, 77. 687-690 doi:10.1016/0022-3093(85)90751-3*
	Akimchenko, I.P., Karriyev, A.N., Gippius, A.A. (1985) Photoluminescence and optical absorption of a-Si:H implanted by transition elements. Journal of Non-Crystalline Solids, 77. 691-694 doi:10.1016/0022-3093(85)90752-5
	Hopkinson, M., Searle, T.M., Austin, I.G., Rhodes, A.J. (1985) A comparison of photo- and electroluminescence in a-Si p-i-n junctions. Journal of Non-Crystalline Solids, 77. 695-698 doi:10.1016/0022-3093(85)90753-7
	Murayama, Kazuro, Ninomiya, Toshiyuki (1985) Photoluminescence decay affected by hopping in band tail in amorphous semiconductors. Journal of Non-Crystalline Solids, 77. 699-702 doi:10.1016/0022-3093(85)90754-9
	*Biegelsen, David K., Stutzmann, Martin (1985) 29Si hyperfine measurements in a-Si:H. Journal of Non-Crystalline Solids, 77. 703-706 doi:10.1016/0022-3093(85)90755-0*
	Ochiai, Y., Yoshizaki, R., Matsuura, E. (1985) ESR and low-temperature transport of the damaged surface layer in doped silicon. Journal of Non-Crystalline Solids, 77. 707-710 doi:10.1016/0022-3093(85)90756-2
	*Bork, V.P, Fedders, P.A, Norberg, R.E, Boyce, J.B, Stutzmann, M (1985) Proton T1 for solid H2 in a-Si:H. Journal of Non-Crystalline Solids, 77. 711-714 doi:10.1016/0022-3093(85)90757-4*
	Bork, V.P., Fedders, P.A., Norberg, R.E., Leopold, D.J., Mackenzie, K.D., Paul, W. (1985) Deuteron magnetic resonance in a-Ge:D, H and a-Si:D, H. Journal of Non-Crystalline Solids, 77. 715-718 doi:10.1016/0022-3093(85)90758-6
	Shimizu, Tatsuo, Kumeda, Minoru, Komatsu, Hiroshi, Yonezawa, Yasuto (1985) NMR and IR studies on SiF4 molecules in a-Si:F. Journal of Non-Crystalline Solids, 77. 719-722 doi:10.1016/0022-3093(85)90759-8
	*Nitta, S., Sakaida, M. (1985) New ESR signals in P-doped a-Si:H. Journal of Non-Crystalline Solids, 77. 723-726 doi:10.1016/0022-3093(85)90760-4*
	*Yamasaki, S, Kuroda, S, Isoya, J, Okushi, H, Tanaka, K (1985) ENDOR and ESEEM study of phosphorus-doped a-Si:H. Journal of Non-Crystalline Solids, 77. 727-730 doi:10.1016/0022-3093(85)90761-6*
	*Finger, F, Carius, R, Fuhs, W, Schrimpf, A (1985) Electron spin resonance (ESR and LESR) studies in a-Si1−xGex:H. Journal of Non-Crystalline Solids, 77. 731-734 doi:10.1016/0022-3093(85)90762-8*
	Lowe, A.J, Cavenett, B.C, Homewood, K.P, Powell, M.J, Elliott, S.R (1985) ODMR in glow-discharge deposited silicon nitride. Journal of Non-Crystalline Solids, 77. 735-738 doi:10.1016/0022-3093(85)90763-x
	*Stathis, James H., Kastner, M.A. (1985) Optically induced metastable paramagnetic centers in amorphous SiO2. Journal of Non-Crystalline Solids, 77. 739-742 doi:10.1016/0022-3093(85)90764-1*
	*Gianinoni, Iva, Musci, Mirella (1985) Laser-assisted CVD of amorphous materials. Journal of Non-Crystalline Solids, 77. 743-752 doi:10.1016/0022-3093(85)90768-9*
	Vitturo, R.E., Weiser, K. (1985) Properties of a-Si:H films produced by direct synthesis of silicon and atomic hydrogen. Journal of Non-Crystalline Solids, 77. 753-756 doi:10.1016/0022-3093(85)90769-0
	Nakayama, Yoshikazu, Ohtsuchi, Tetsuro, Nakano, Masao, Kawamura, Takao (1985) Initial transient phenomena in the plasma decomposition of silane. Journal of Non-Crystalline Solids, 77. 757-760 doi:10.1016/0022-3093(85)90770-7
	*Abouaf-Marguin, L., Lloret, A. (1985) Silane glow discharge: Trapping of the free radicals in solid argon. Journal of Non-Crystalline Solids, 77. 761-764 doi:10.1016/0022-3093(85)90771-9*
	Mejia, S.R., McLeod, R.D., Fries, W., Shufflebotham, P., Thomson, D.J., White, J., Shellenberg, J., Kao, K.C., Card, H.C. (1985) Fabrication of a-Si: H films by microwave plasmas under electron cyclotron resonance conditions. Journal of Non-Crystalline Solids, 77. 765-768 doi:10.1016/0022-3093(85)90772-0
	Antoine, A.M, Drevillon, B, Roca, P, Cabarrocas, I (1985) Growth processes of RF glow discharge deposited a-Si:H and a-Ge:H films. Journal of Non-Crystalline Solids, 77. 769-772 doi:10.1016/0022-3093(85)90773-2
	Hanak, Joseph J. (1985) Plasma potential gradient in DC positive column and its effect on the deposition and photovoltaic performance of a-Si:H films. Journal of Non-Crystalline Solids, 77. 773-776 doi:10.1016/0022-3093(85)90774-4
	*Hata, Nobuhiro, Tanaka, Kazunobu (1985) Silane plasma and surface processes in amorphous silicon deposition. Journal of Non-Crystalline Solids, 77. 777-780 doi:10.1016/0022-3093(85)90775-6*
	Miyazaki, Seiichi, Hirata, Hiroharu, Ohkawa, Shinji, Hirose, Masataka (1985) Growth kinetics of amorphous and microcrystalline silicon studied by using radical beam. Journal of Non-Crystalline Solids, 77. 781-784 doi:10.1016/0022-3093(85)90776-8
	Maessen, K.M.H., Pruppers, M.J.M., Habraken, F.H.P.M., Bezemer, J., van der Weg, W.F. (1985) Hydrogen and deuterium incorporation in glow discharge amorphous silicon. Journal of Non-Crystalline Solids, 77. 785-788 doi:10.1016/0022-3093(85)90777-x
	Kanicki, J, Scott, B.A, Inushima, T, Brodsky, M.H (1985) Optical, electrical and contact properties of homoCVD a-Si:H films. Journal of Non-Crystalline Solids, 77. 789-792 doi:10.1016/0022-3093(85)90778-1
	Matsumura, Hideki, Ihara, Hisanori, Tachibana, Hiroyuki, Tanaka, Hirofumi (1985) Highly photo-conductive amorphous silicon produced by thermal CVD method using intermediate species SiF2. Journal of Non-Crystalline Solids, 77. 793-796 doi:10.1016/0022-3093(85)90779-3
	Nakayama, Yoshikazu, Wakimura, Kazuo, Takahashi, Seiki, Kita, Hideki, Kawamura, Takao (1985) Plasma deposition of aSi:H:F films from SiH2F2 and SiF4SiH4. Journal of Non-Crystalline Solids, 77. 797-800 doi:10.1016/0022-3093(85)90780-x
	Koinuma, H, Manako, T, Natsuaki, H, Fujioka, H, Fueki, K (1985) Photosensitive amorphous silicon films deposited from hexafluorodisilane. Journal of Non-Crystalline Solids, 77. 801-804 doi:10.1016/0022-3093(85)90781-1
	Bruno, Giovanni, Capezzuto, Pio, Cicala, Grazia, Cramarossa, Francesco (1985) Structure and chemical composition of glow discharge Si:H,Cl films. The role of gas phase argon addition. Journal of Non-Crystalline Solids, 77. 805-808 doi:10.1016/0022-3093(85)90782-3
	Hudgens, S.J, Johncock, A.G, Ovshinsky, S.R (1985) Low pressure microwave glow discharge process for high deposition rate amorphous silicon alloy. Journal of Non-Crystalline Solids, 77. 809-812 doi:10.1016/0022-3093(85)90783-5
	*Kato, Seiichi, Aoki, Takeshi (1985) High-rate deposition of a-Si:H using electron cyclotron resonance plasma. Journal of Non-Crystalline Solids, 77. 813-816 doi:10.1016/0022-3093(85)90784-7*
	*Anderson, J.C., Biswas, S. (1985) Activated reactive evaporation of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 77. 817-820 doi:10.1016/0022-3093(85)90785-9*
	Ueda, Masato, Chayahara, Akiyoshi, Nakashita, Toshio, Imura, Takeshi, Osaka, Yukio (1985) Annealing effect on structure and properties of a-Si:H prepared at high deposition-rate. Journal of Non-Crystalline Solids, 77. 821-824 doi:10.1016/0022-3093(85)90786-0
	Das, S.R, Williams, D.F, Webb, J.B (1985) The effect of microstructure on the interrelationship of electrical, optical and opto-electronic properties in amorphous SixHy alloy films prepared by planar R.F. Magnetron Sputtering. Journal of Non-Crystalline Solids, 77. 825-828 doi:10.1016/0022-3093(85)90787-2
	Qiao, Jianmin, Jiang, Zhonghua, Ding, Zishang (1985) Effect of some process parameters on the deposition mechanism of ASi:H film. Journal of Non-Crystalline Solids, 77. 829-832 doi:10.1016/0022-3093(85)90788-4
	*Delahoy, A.E. (1985) High rate photochemical deposition of amorphous silicon from higher silanes. Journal of Non-Crystalline Solids, 77. 833-836 doi:10.1016/0022-3093(85)90789-6*
	Mackowski, J.M., Pignard, R., Vedovotto, N., Robert, P., Donnadieu, A. (1985) Amorphous diamond-like carbon films: Effect of deposition rate on optical and mechanical properties. Journal of Non-Crystalline Solids, 77. 837-840 doi:10.1016/0022-3093(85)90790-2
	Matsumura, Hideki, Uesugi, Takashi, Ihara, Hisanori (1985) Photo-conductive hydro-fluorinated amorphous silicon carbide produced by using intermediate species SiF2. Journal of Non-Crystalline Solids, 77. 841-844 doi:10.1016/0022-3093(85)90791-4
	Tsuda, S., Tarui, H., Haku, H., Nakashima, Y., Hishikawa, Y., Nakano, S., Kuwano, Y. (1985) High quality a-SiGe alloys prepared by new methods - a-SiGe:H:F and superlattice structure fabricated by photo-CVD -. Journal of Non-Crystalline Solids, 77. 845-848 doi:10.1016/0022-3093(85)90792-6
	Schmidt, Martin P., Solomon, Ionel, Tran-Quoc, Hai, Bullot, Jacques (1985) Physics of low density-of-states a-Si1−xCx films. Journal of Non-Crystalline Solids, 77. 849-852 doi:10.1016/0022-3093(85)90793-8
	Sala, D.Della, Fiorini, P, Frova, A, Gregori, A, Skumanich, A, Amer, N.M (1985) Gap state spectroscopy in a-SixC1−x:H alloys. Journal of Non-Crystalline Solids, 77. 853-856 doi:10.1016/0022-3093(85)90794-x
	*Beyer, W., Wagner, H., Finger, F. (1985) Hydrogen evolution from a-Si:C:H and a-Si:Ge:H alloys. Journal of Non-Crystalline Solids, 77. 857-860 doi:10.1016/0022-3093(85)90795-1*
	Mahan, A.H., Williamson, D.L., Ruth, M., Raboisson, P. (1985) On the differences between a-SiC:H films deposited with and without fluorine. Journal of Non-Crystalline Solids, 77. 861-864 doi:10.1016/0022-3093(85)90796-3
	Nonomura, S., Sakata, S., Kanada, T., Kida, H., Kruangam, D., Okamoto, H., Hamakawa, Y. (1985) Detailed studies of optical edge and below gap absorption in a-Si1−xCx:H system. Journal of Non-Crystalline Solids, 77. 865-868 doi:10.1016/0022-3093(85)90797-5
	Siebert, W, Jahn, K, Fuhs, W (1985) Steady-state and time-resolved photoluminescence in a-Si1−xCx:H and a-SiNx:H films. Journal of Non-Crystalline Solids, 77. 869-872 doi:10.1016/0022-3093(85)90798-7
	Bauer, G.H., Mohring, H.-D., Bilger, G., Eicke, A. (1985) Structural properties of a-SiC:H- and a-SiN:H-Alloys from XPS-analyses and IR-absorption. Journal of Non-Crystalline Solids, 77. 873-876 doi:10.1016/0022-3093(85)90799-9
	Oda, S., Ishihara, S., Shibata, N., Takagi, S., Shirai, H., Miyauchi, A., Shimizu, I. (1985) Properties of a-Si based alloys prepared from fluorides and hydrogen. Journal of Non-Crystalline Solids, 77. 877-880 doi:10.1016/0022-3093(85)90800-2
	Mackenzie, K.D., Hanna, J., Eggert, J.R., Li, Y.M., Sun, Z.L., Paul, W. (1985) Properties of a-Si1−xGex:H and a-Si1−xGex:H:F alloys. Journal of Non-Crystalline Solids, 77. 881-884 doi:10.1016/0022-3093(85)90801-4
	Rudder, R.A., Parsons, G.N., Cook, J.W., Lucovsky, G. (1985) Low defect density a-Si, Ge:H alloy films produced by magnetron sputtering from separate Si and Ge cathodes. Journal of Non-Crystalline Solids, 77. 885-888 doi:10.1016/0022-3093(85)90802-6
	Wakagi, M., Chigasaki, M., Tamahashi, K., Ohno, T., Naruse, M., Hanazono, M., Maruyama, E. (1985) Structure and properties of a-Si1−xGex:H films prepared by RF-diode sputtering. Journal of Non-Crystalline Solids, 77. 889-892 doi:10.1016/0022-3093(85)90803-8
	*Kodato, Setsuo (1985) SiGe alloy film with very high electrical conductivity and thermoelectric power. Journal of Non-Crystalline Solids, 77. 893-896 doi:10.1016/0022-3093(85)90804-x*
	Kolodzey, J., Slobodin, D., Aljishi, S., Quinlan, S., Schwarz, R., Shen, D.S., Fauchet, P.M., Wagner, S. (1985) Transport properties of α-Si, Ge:H alloys prepared from SiF4, GeF4 and H2 in R.F. or D.C. Glow discharges. Journal of Non-Crystalline Solids, 77. 897-900 doi:10.1016/0022-3093(85)90805-1
	Ichimura, T., Ihara, T., Hama, T., Ohsawa, M., Sakai, H., Uchida, Y. (1985) Electrical and structural properties of a-SiGe:H films. Journal of Non-Crystalline Solids, 77. 901-904 doi:10.1016/0022-3093(85)90806-3
	Wenyuan, Xu, Yonbai, Yin, Changjan, Lee (1985) The enhancement of the photoconductivity of a-SiSn (Cl:H) alloys by means of G D technique. Journal of Non-Crystalline Solids, 77. 905-908 doi:10.1016/0022-3093(85)90807-5
	Jackson, W.A., Searle, T.M., Austin, I.G., Gibson, R.A. (1985) Photoluminescence excitation studies of a-SiNx:H alloys. Journal of Non-Crystalline Solids, 77. 909-912 doi:10.1016/0022-3093(85)90808-7
	*Rong-chuan, Fang, Yi-zhou, Song, Ming, Yang, Wen-di, Jiang (1985) Photoluminescence of hydrogenated a-SiNx films. Journal of Non-Crystalline Solids, 77. 913-916 doi:10.1016/0022-3093(85)90809-9*
	Chaussat, C, Bustarret, E, Deneuville, A (1985) Chemical heterogeneity in off stoichiometry a-SixNyHz from a collective vibrational modes study. Journal of Non-Crystalline Solids, 77. 917-920 doi:10.1016/0022-3093(85)90810-5
	Yamaguchi, M., Morigaki, K., Yoshida, M., Nitta, S. (1985) Nitrogen-related defects and their role in the photo-induced phenomena in a-Si1−xNx:H. Journal of Non-Crystalline Solids, 77. 921-924 doi:10.1016/0022-3093(85)90811-7
	Richard, P.D., Tsu, D.V., Lucovsky, G., Lin, S.Y. (1985) Low temperature deposition of amorphous silicon oxide and silicon nitride films. Journal of Non-Crystalline Solids, 77. 925-928 doi:10.1016/0022-3093(85)90812-9
	Chao, S.S., Lucovsky, G., Lin, S.Y., Wong, C.K., Richard, P.D., Tsu, D.V., Takagi, Y., Keem, J.E., Tyler, J.E., Pai, P. (1985) A study of electronic states in a-SiOx and a-SiNx thin films by infrared, auger electron and X-ray photoelectron spectroscopies. Journal of Non-Crystalline Solids, 77. 929-932 doi:10.1016/0022-3093(85)90813-0
	*Sala, D.Della, Coluzza, C, Fortunato, G, Evangelisti, F (1985) Infrared and optical study of a-SiN alloys. Journal of Non-Crystalline Solids, 77. 933-936 doi:10.1016/0022-3093(85)90814-2*
	Watanabe, H., Katoh, K., Imagi, S., Shibata, Y. (1985) Photoconductive a-SiNx:H films deposited at high substrate temperatures. Journal of Non-Crystalline Solids, 77. 937-940 doi:10.1016/0022-3093(85)90815-4
	Nishibayashi, Yoshiki, Imura, Takeshi, Osaka, Yukio (1985) Properties of amorphous silicon nitride films prepared at high deposition rate. Journal of Non-Crystalline Solids, 77. 941-944 doi:10.1016/0022-3093(85)90816-6
	Kubler, L, Haug, R, Koulmann, J.J, Bolmont, D, Hill, K, Jaegle, A (1985) Nitrogen bonding changes versus substrate temperature evidenced by X.P.S. in SiNxHy alloys prepared with NH3. Journal of Non-Crystalline Solids, 77. 945-948 doi:10.1016/0022-3093(85)90817-8
	*Morgado, E, Guimarães, L (1985) Disorder effects of nitrogen incorporation in amorphous Si:H:N. Journal of Non-Crystalline Solids, 77. 949-952 doi:10.1016/0022-3093(85)90818-x*
	Meaudre, R, Mezhoudi, A, Meaudre, M, Tardy, J (1985) Effects of boron doping on electrical and optical properties of a-SixN1−x : a-SixN1−x: H films prepared by DC sputtering. Journal of Non-Crystalline Solids, 77. 953-956 doi:10.1016/0022-3093(85)90819-1
	*Jones, B.L (1985) High stability, plasma deposited, amorphous silicon nitride for thin film transistors. Journal of Non-Crystalline Solids, 77. 957-960 doi:10.1016/0022-3093(85)90820-8*
	Chik, K.P, Du, N, John, P.K, Ou, E, Rastogi, A.C, Tam, K.H, Tong, B.Y, Wong, S.K, Wu, X.W, Yao, J (1985) New amorphous silicon-boron alloy. Journal of Non-Crystalline Solids, 77. 961-964 doi:10.1016/0022-3093(85)90821-x
	*Morimoto, Akiharu, Takamori, Shinji, Shimizu, Tatsuo (1985) New type of amorphous alloy; SiZnS. Journal of Non-Crystalline Solids, 77. 965-968 doi:10.1016/0022-3093(85)90822-1*
	*Evangelisti, F. (1985) Photoemission studies of amorphous semiconductor heterojunctions. Journal of Non-Crystalline Solids, 77. 969-977 doi:10.1016/0022-3093(85)90823-3*
	*Foller, M., Herion, J., Beyer, W., Wagner, H. (1985) Surface studies on as-deposited a-Si:H films. Journal of Non-Crystalline Solids, 77. 979-982 doi:10.1016/0022-3093(85)90824-5*
	Nitta, S., Sakaida, M., Murase, I., Kawai, M., Matsunami, N. (1985) Films and substrates interaction in a-Ge1−xCx:H, a-Si1−xNx:H and a-Si1−xCx:H elucidated by ESR. Journal of Non-Crystalline Solids, 77. 983-986 doi:10.1016/0022-3093(85)90825-7
	Cuniot, M., Marfaing, Y. (1985) Study of the band discontinuities at the a-SiH/c-Si interface by internal photoemission. Journal of Non-Crystalline Solids, 77. 987-990 doi:10.1016/0022-3093(85)90826-9
	*Niemann, E., Fischer, R., Leidich, D., Linhart, E. (1985) Electrical properties of a-SiCx/a-Si heterojunctions. Journal of Non-Crystalline Solids, 77. 991-994 doi:10.1016/0022-3093(85)90827-0*
	Tsai, C.C, Thompson, M.J, Street, R.A, Stutzmann, M, Ponce, F (1985) Interface effects in amorphous silicon/nitride multilayers. Journal of Non-Crystalline Solids, 77. 995-998 doi:10.1016/0022-3093(85)90828-2
	Coluzza, C., Fortunato, G., Quaresima, C., Capozi, M., Perfetti, P. (1985) Photoemission studies of a-SiNx:H/a-Si:H heterojunctions. Journal of Non-Crystalline Solids, 77. 999-1002 doi:10.1016/0022-3093(85)90829-4
	*Collins, R.W, Guha, S (1985) A study of amorphous semiconductor interfaces by spectroscopic ellipsometry. Journal of Non-Crystalline Solids, 77. 1003-1006 doi:10.1016/0022-3093(85)90830-0*
	*Robertson, J., Powell, M.J. (1985) Defect model of charge transfer doping at a-SiNx:H/a-Si:H interfaces. Journal of Non-Crystalline Solids, 77. 1007-1010 doi:10.1016/0022-3093(85)90831-2*
	*Könenkamp, Rolf (1985) Transient photocurrents at the a-Si:H/SiOx interface. Journal of Non-Crystalline Solids, 77. 1011-1014 doi:10.1016/0022-3093(85)90832-4*
	Okushi, H, Yamasaki, S, Matsuda, A, Tanaka, K (1985) Measurement of spatial distribution of gap states originating from dangling bonds near metal/a-Si:H interface. Journal of Non-Crystalline Solids, 77. 1015-1018 doi:10.1016/0022-3093(85)90833-6
	*Losch, W., Niehus, H. (1985) Microstructure of the Pd/a-Si:H interface. Journal of Non-Crystalline Solids, 77. 1019-1022 doi:10.1016/0022-3093(85)90834-8*
	Oyanagi, Hiroyuki, Matsuda, Akihisa, Matsushita, Tadashi, Okushi, Hidetoshi, Ishiguro, Takehiko, Tanaka, Kazunobu (1985) Structure of platinum-hydrogenated amorphous silicon interfaces studied by fluorescence-detected x-ray absorption spectroscopy. Journal of Non-Crystalline Solids, 77. 1023-1026 doi:10.1016/0022-3093(85)90835-x
	Tsukada, T., Seki, K., Tanaka, Y., Yamamoto, H., Sasano, A. (1985) Characterization of amorphous silicides formed through interaction between a-Si:H and metals. Journal of Non-Crystalline Solids, 77. 1027-1030 doi:10.1016/0022-3093(85)90836-1
	Tiedje, T., Wronski, C.R., Persans, P., Abeles, B. (1985) Recent experimental results on a-Si:H/a-Ge:H superlattice structures. Journal of Non-Crystalline Solids, 77. 1031-1040 doi:10.1016/0022-3093(85)90837-3
	*Döhler, Gottfried H. (1985) Theory of amorphous multilayer structures (superlattices) Journal of Non-Crystalline Solids, 77. 1041-1050 doi:10.1016/0022-3093(85)90838-5*
	*Hundhausen, M, Ley, L (1985) Persistent photoconductivity in doping-modulated amorphous silicon superlattices. Journal of Non-Crystalline Solids, 77. 1051-1060 doi:10.1016/0022-3093(85)90839-7*

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(1985) Journal of Non-Crystalline Solids Vol. 77. Elsevier BV

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